What are Transistors - FETs, MOSFETs - Arrays ?
Transistors - FETs, MOSFETs - Arrays are semiconductor devices that control the flow of electrical signals, commonly used in power management applications. They are integral in industrial power management, new product design, and production electronics assembly. Important specifications include Configuration, which determines the transistor's arrangement for optimal performance; Drain to Source Voltage (Vdss), which defines the maximum voltage the transistor can handle; and Gate Charge (Qg) (Max) @ Vgs, which affects switching speed and efficiency. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.
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| Part & Mfr | Total Stock | Pricing & RFQ | Configuration | Current | Drain to Source Voltage (Vdss) | FET Feature | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs(th) (Max) @ Id | |
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ALPHA & OMEGA SEMICONDU CTOR
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N and P-Channel Complementary | 3.8A (Ta), 4.5A (Ta) | 30V, 20V | Standard | 16nC @ 10V, 17nC @ 4.5V | 340pF @ 15V, 930pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.25W (Ta) | 50mOhm @ 3.8A, 10V, 44mOhm @ 4.5A, 4.5V | 6-TSOP | MOSFET (Metal Oxide) | 1.5V @ 250µA, 950mV @ 250µA | |
On Semiconductor
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2 N-Channel (Dual) | 5.5A, 8.5A | 30V | Logic Level Gate | 11nC @ 10V | 420pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 900mW | 31mOhm @ 5.5A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 3V @ 250µA | |
Goford Semiconductor
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2 N-Channel | - | 40V | Standard | 44nC @ 10V | - | Surface Mount | -55°C ~ 150°C (TJ) | 20W (Tc) | - | 8-DFN (4.9x5.75) | MOSFET (Metal Oxide) | 2.3V @ 250µA | |
Texas Instruments
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2 N-Channel (Dual) | 4.5A | 25V | Logic Level Gate | 4nC @ 4.5V | 585pF @ 12.5V | Surface Mount | -55°C ~ 150°C (TJ) | 1.5W | 39mOhm @ 2A, 8V | 12-DSBGA | MOSFET (Metal Oxide) | 1.4V @ 250µA | |
Goford Semiconductor
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2 N-Channel | 9A (Tc) | 60V | Standard | 47nC @ 10V | - | Surface Mount | -55°C ~ 150°C (TJ) | - | 18mOhm @ 9A, 10V | 8-SOP | MOSFET (Metal Oxide) | 2.2V @ 250µA | |
Diotec Semiconductor
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N and P-Channel | 115mA (Ta), 130mA (Ta) | 60V, 50V | - | - | 50pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 200mW (Ta) | 10Ohm @ 130mA, 10V | SOT-363 | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
Intersil
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Renesas
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2 N-Channel (Dual) | 6A | 24V | - | - | - | Surface Mount | - | - | - | 4-EFLIP (1.62x1.62) | MOSFET (Metal Oxide) | - | |
Renesas
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2 N-Channel (Dual) | 100mA | 50V | Logic Level Gate | - | 16pF @ 5V | Surface Mount | 150°C (TJ) | 300mW | 25Ohm @ 10mA, 10V | SC-59 | MOSFET (Metal Oxide) | 1.8V @ 1µA | |
Good-Ark Semiconductor
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Infineon Technologies
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2 P-Channel (Dual) | 7A (Ta) | 20V | Logic Level Gate | 39nC @ 4.5V | 3750pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.6W (Ta) | 21mOhm @ 8.2A, 4.5V | PG-DSO-8 | MOSFET (Metal Oxide) | 1.2V @ 50µA | |
Infineon Technologies
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2 N-Channel (Dual) | 50A (Tc) | 40V | Logic Level Gate | 33nC @ 10V | 2480pF @ 25V | Surface Mount | -55°C ~ 175°C (TJ) | 46W (Tc) | 7.2mOhm @ 50A, 10V | PG-TO252-5-311 | MOSFET (Metal Oxide) | 2.2V @ 18µA | |
Diodes Incorporated
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2 N-Channel (Dual) | 6.2A (Ta), 15.2A (Tc) | 20V | - | 0.9nC @ 10V | 647pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 890mW (Ta) | 24mOhm @ 6.5A, 4.5V | 8-TSSOP | MOSFET (Metal Oxide) | 950mV @ 250µA | |
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Good-Ark Semiconductor
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Texas Instruments
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2 N-Channel (Dual) Asymmetrical | 20A | 30V | Logic Level Gate | 8.3nC @ 4.5V | 1260pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 6W | 6mOhm @ 12A, 8V | 8-VSON (3.3x3.3) | MOSFET (Metal Oxide) | 1.2V @ 250µA | |
Texas Instruments
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2 N-Channel (Half Bridge) | 20A (Ta) | 25V | Logic Level Gate, 5V Drive | 3.8nC @ 45V, 7.4nC @ 45V | 494pF @ 12.5V, 970pF @ 12.5V | Surface Mount | -55°C ~ 125°C | 6W | 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 8-VSON (3.3x3.3) | MOSFET (Metal Oxide) | 1.9V @ 250µA, 1.6V @ 250µA | |
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Good-Ark Semiconductor
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ALPHA & OMEGA SEMICONDU CTOR
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N and P-Channel Complementary | 3.5A (Ta), 2.7A (Ta) | 30V | Standard | 5nC @ 10V, 5.2nC @ 10V | 210pF @ 15V, 240pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.15W (Ta) | 50mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V | 6-TSOP | MOSFET (Metal Oxide) | 2.5V @ 250µA, 2.4V @ 250µA | |
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On Semiconductor
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2 N-Channel (Dual) | 7A (Ta) | 30V | - | 13nC @ 10V | 635pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.6W (Ta) | 23mOhm @ 7A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
Texas Instruments
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2 N-Channel (Dual) Common Drain | - | 30V | - | 28nC @ 4.5V | 4290pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | - | - | 8-WSON (3.3x3.3) | MOSFET (Metal Oxide) | 1.25V @ 250µA | |
On Semiconductor
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PN Junction Semiconductor
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2 N-Channel (Half Bridge) | 350A | 1200V (1.2kV) | - | - | 29.5pF @ 1000V | Chassis Mount | -40°C ~ 175°C (TJ) | - | 7.3mOhm @ 300A, 20V | Module | Silicon Carbide (SiC) | 5V @ 100mA | |
GE Aerospace
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2 Independent | 475A | 1200V (1.2kV) | - | 1248nC @ 18V | 29300pF @ 600V | Chassis Mount | -55°C ~ 150°C (Tc) | 1250W | 4.4mOhm @ 475A, 20V | - | Silicon Carbide (SiC) | 4.5V @ 160mA | |
GE Aerospace
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2 N-Channel (Half Bridge) | 475A | 1200V (1.2kV) | - | 1248nC @ 18V | 29300pF @ 600V | Chassis Mount | -55°C ~ 150°C (Tc) | 1250W | 4.4mOhm @ 475A, 20V | - | Silicon Carbide (SiC) | 4.5V @ 160mA | |
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On Semiconductor
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N and P-Channel | 5.5A, 4.4A | 40V | - | 10nC @ 10V | 410pF @ 20V | Surface Mount | -55°C ~ 150°C (TJ) | 900mW | 39mOhm @ 5.5A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 5V @ 250µA | |
GE Aerospace
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2 N-Channel (Dual) | 425A (Tc) | 1700V (1.7kV) | - | 18V | 29100pF @ 900V | Chassis Mount | 175°C (TJ) | 1250W | 4.45mOhm @ 425A, 20V | - | Silicon Carbide (SiC) | 4.5V @ 160mA | |
GE Aerospace
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2 N-Channel (Half Bridge) | 765A | 1700V (1.7kV) | - | 2414nC @ 18V | 58000pF @ 900V | Chassis Mount | -55°C ~ 150°C (Tc) | 2350W | 2.23mOhm @ 765A, 20V | - | Silicon Carbide (SiC) | 4.5V @ 160mA | |
WOLFSPEED
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2 N-Channel (Half Bridge) | 908A (Tc) | 1200V (1.2kV) | - | - | 45300pF @ 0V | Chassis Mount | -40°C ~ 175°C (TJ) | 50mW | - | Module | Silicon Carbide (SiC) | - | |
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WOLFSPEED
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2 N-Channel (Half Bridge) | 986A (Tc) | 1700V (1.7kV) | - | - | 55700pF @ 0V | Chassis Mount | -40°C ~ 175°C (TJ) | 50mW | - | Module | Silicon Carbide (SiC) | - | |
GE Aerospace
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2 N-Channel (Half Bridge) | 1.425kA (Tc) | 1200V (1.2kV) | - | 3744nC @ 18V | 90000pF @ 600V | Chassis Mount | -55°C ~ 150°C (Tc) | 3.75kW (Tc) | 1.5mOhm @ 475A, 20V | - | Silicon Carbide (SiC) | 4.5V @ 480mA | |
GE Aerospace
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6 N-Channel (3-Phase Bridge) | 475A (Tc) | 1200V (1.2kV) | - | 1248nC @ 18V | 29300pF @ 600V | Chassis Mount | -55°C ~ 150°C (Tc) | 1250W (Tc) | 4.4mOhm @ 475A, 20V | - | Silicon Carbide (SiC) | 4.5V @ 160mA | |
CISSOID
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6 N-Channel (3-Phase Bridge) | 450A | 1200V (1.2kV) | - | 295nC @ 15V | 30000pF @ 600V | Chassis Mount | -40°C ~ 175°C (TJ) | - | 3.25mOhm @ 300A | Module | Silicon Carbide (SiC) | - | |
WOLFSPEED
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2 N-Channel (Dual) | 653A (Tc) | 1700V (1.7kV) | - | 1992nC @ 15V | 64900pF @ 1200V | Chassis Mount | -40°C ~ 175°C (TJ) | 50mW | 2.6mOhm @ 500A, 15V | Module | Silicon Carbide (SiC) | 3.6V @ 203mA | |
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GE Aerospace
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6 N-Channel (3-Phase Bridge) | 425A (Tc) | 1700V (1.7kV) | - | 1207nC @ 18V | 29100pF @ 900V | Chassis Mount | -55°C ~ 150°C (Tc) | 1250W (Tc) | 4.45mOhm @ 425A, 20V | - | Silicon Carbide (SiC) | 4.5V @ 160mA | |
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GE Aerospace
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- | 1.4kA | 1700V | - | - | - | Chassis Mount | 175°C (TJ) | - | - | - | Silicon Carbide (SiC) | - | |
Intersil
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Goford Semiconductor
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- | 6.5A (Ta), 5A (Ta) | 20V | Standard | 5.2nC @ 10V, 9.2nC @ 10V | 255pF @ 15V, 520pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 2W (Ta) | - | 8-SOP | MOSFET (Metal Oxide) | 1V @ 250µA | |
EPC
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2 N-Channel (Half Bridge) | 1.7A | 100V | - | 0.73nC @ 5V | 75pF @ 50V | Surface Mount | -40°C ~ 150°C (TJ) | - | 70mOhm @ 2A, 5V | Die | GaNFET (Gallium Nitride) | 2.5V @ 600µA | |
EPC
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2 N-Channel (Half Bridge) | 23A | 80V | - | 6.5nC @ 5V | 7600pF @ 40V | Surface Mount | - | - | 5.5mOhm @ 20A, 5V | Die | GaNFET (Gallium Nitride) | 2.5V @ 7mA | |
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EPC
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2 N-Channel (Half Bridge) | 23A | 100V | - | 7nC @ 5V | 800pF @ 50V | Surface Mount | -40°C ~ 150°C (TJ) | - | 6.3mOhm @ 20A, 5V | Die | GaNFET (Gallium Nitride) | 2.5V @ 5.5mA | |
On Semiconductor
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2 N-Channel (Dual) Common Drain | 10A (Ta) | 20V | - | 24nC @ 10V | 2055pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 2W (Ta) | 13mOhm @ 1A, 4.5V | 6-WLCSP (1.3x2.3) | MOSFET (Metal Oxide) | 1.2V @ 250µA | |
Diodes Incorporated
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2 N-Channel (Dual) | 6.5A | 30V | - | - | - | Surface Mount | - | - | - | 8-SO | MOSFET (Metal Oxide) | - | |
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ALPHA & OMEGA SEMICONDU CTOR
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N and P-Channel | 3.5A (Ta), 2.7A (Ta) | 30V | Standard | 4.05nC @ 10V | 210pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.15W (Ta) | 50mOhm @ 3.5A, 10V | 6-TSOP | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
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EPC
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2 N-Channel (Half Bridge) | 23A (Tj) | 60V | - | 6.8nC @ 5V | 830pF @ 30V | Surface Mount | -40°C ~ 150°C (TJ) | - | 4.4mOhm @ 20A, 5V | Die | GaNFET (Gallium Nitride) | 2.5V @ 7mA | |
PANJIT
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2 N-Channel (Dual) | 8A (Ta) | 30V | - | 4.3nC @ 4.5V | 392pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 1.25W (Ta) | 19mOhm @ 8A, 10V | 8-SOP | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
STMicroelectronics
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2 P-Channel (Dual) | 5A | 20V | Logic Level Gate | 16nC @ 5V | 1350pF @ 16V | Surface Mount | 150°C (TJ) | 1.6W | 55mOhm @ 2.5A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
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Good-Ark Semiconductor
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NXP Semiconductors
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2 P-Channel (Dual) | 3.5A | 20V | Logic Level Gate | 6nC @ 4.5V | 380pF @ 10V | Surface Mount | 150°C (TJ) | 520mW | 70mOhm @ 1A, 4.5V | 6-HUSON (2x2) | MOSFET (Metal Oxide) | 1V @ 250µA | |
Nexperia USA Inc.
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2 P-Channel (Dual) | 2.3A | 30V | Logic Level Gate | 25nC @ 10V | 250pF @ 20V | Surface Mount | 150°C (TJ) | 2W | 250mOhm @ 1A, 10V | 8-SO | MOSFET (Metal Oxide) | 2.8V @ 1mA | |
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NXP Semiconductors
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