What are Transistors - FETs, MOSFETs - Arrays ?
Transistors - FETs, MOSFETs - Arrays are semiconductor devices that control the flow of electrical signals, commonly used in power management applications. They are integral in industrial power management, new product design, and production electronics assembly. Important specifications include Configuration, which determines the transistor's arrangement for optimal performance; Drain to Source Voltage (Vdss), which defines the maximum voltage the transistor can handle; and Gate Charge (Qg) (Max) @ Vgs, which affects switching speed and efficiency. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.
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| Part & Mfr | Total Stock | Pricing & RFQ | Configuration | Current | Drain to Source Voltage (Vdss) | FET Feature | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs(th) (Max) @ Id | |
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Infineon Technologies
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- | - | 1200V (1.2kV) | - | - | - | Chassis Mount | - | - | - | AG-EASY1B | MOSFET (Metal Oxide) | - | |
ROHM Semiconductor
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N and P-Channel | 3.5A | 30V | Logic Level Gate | 1.9nC @ 5V | 85pF @ 10V | Surface Mount | 150°C (TJ) | 2W | 98mOhm @ 3.5A, 10V | 8-SOP | MOSFET (Metal Oxide) | 2.5V @ 1mA | |
Diodes Incorporated
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2 N-Channel (Dual) | - | - | - | 35.2nC @ 4.5V | 2360pF @ 6V | Surface Mount | -55°C ~ 150°C (TJ) | 2.4W | - | X3-DSN2718-6 | MOSFET (Metal Oxide) | 1.3V @ 1mA | |
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Microchip Technology
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4 N-Channel (Three Level Inverter) | 58A (Tc) | 700V | - | 99nC @ 20V | 2010pF @ 700V | Chassis Mount | -40°C ~ 175°C (TJ) | 176W (Tc) | 44mOhm @ 30A, 20V | SP3F | Silicon Carbide (SiC) | 2.7V @ 2mA | |
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Diodes Incorporated
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2 N-Channel (Dual) | 9.4A (Ta), 17.1A (Tc) | 60V | - | 15.7nC @ 10V | 808pF @ 30V | Surface Mount | -55°C ~ 150°C (TJ) | 2.4W (Ta), 7.9W (Tc) | 18mOhm @ 10A, 10V | PowerDI5060-8 (Type UXD) | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
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Microchip Technology
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2 N Channel (Phase Leg) | 79A | 1200V (1.2kV) | - | 232nC @ 20V | 3020pF @ 1000V | Chassis Mount | -55°C ~ 175°C (TJ) | 310W | 31mOhm @ 40A, 20V | - | Silicon Carbide (SiC) | 2.8V @ 3mA | |
Infineon Technologies
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2 N-Channel (Dual) | 3.5A | 20V | Logic Level Gate | 15nC @ 10V | 320pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 100mOhm @ 1.8A, 10V | 8-SO | MOSFET (Metal Oxide) | 3V @ 250µA | |
Nexperia USA Inc.
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2 N-Channel (Dual) | 40A (Ta) | 60V | - | 30.1nC @ 10V | 2163pF @ 25V | Surface Mount | -55°C ~ 175°C (TJ) | 64W (Ta) | 10mOhm @ 10A, 10V | LFPAK56D | MOSFET (Metal Oxide) | 4V @ 1mA | |
PANJIT
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N and P-Channel Complementary | 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc) | 30V | - | 4.8nC @ 4.5V, 7.8nC @ 4.5V | 429pF @ 25V, 846pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.7W (Ta), 21W (Tc) | 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V | DFN5060B-8 | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
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Microchip Technology
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2 N-Channel (Dual) Common Source | 79A | 1200V (1.2kV) | - | 232nC @ 20V | 3020pF @ 1000V | Chassis Mount | -55°C ~ 175°C (TJ) | 310W | 31mOhm @ 40A, 20V | - | Silicon Carbide (SiC) | 2.8V @ 3mA | |
Sanken
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6 N-Channel | 8A | 35V | - | - | - | Through Hole | - | - | - | 15-ZIP | MOSFET (Metal Oxide) | - | |
PANJIT
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N and P-Channel Complementary | 7.6A (Ta), 23A (Tc), 6.7A (Ta), 20A (Tc) | 30V | - | 4.8nC @ 4.5V, 7.8nC @ 4.5V | 429pF @ 25V, 846pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 2W (Ta), 18W (Tc) | 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V | DFN3030B-8 | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
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Infineon Technologies
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- | - | 1200V (1.2kV) | - | - | - | Chassis Mount | - | - | - | AG-EASY1B | MOSFET (Metal Oxide) | - | |
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Infineon Technologies
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N and P-Channel | 5.2A, 4.3A | 20V | Logic Level Gate | 20nC @ 4.5V | 660pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 50mOhm @ 2.6A, 4.5V | 8-SO | MOSFET (Metal Oxide) | 700mV @ 250µA | |
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Diodes Incorporated
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2 N-Channel (Dual) | 5.5A (Ta) | 30V | - | 10.6nC @ 10V | 500pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 820mW | 30mOhm @ 5.8A, 10V | U-DFN2020-6 (SWP) Type B | MOSFET (Metal Oxide) | 2V @ 250µA | |
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Diodes Incorporated
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2 N-Channel (Dual) Common Drain | 16.5A (Ta) | 12V | - | 36.6nC @ 4V | 59pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.2W | 5.1mOhm @ 4A, 4.5V | X4-DSN2117-6 | MOSFET (Metal Oxide) | 1.3V @ 840µA | |
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Diodes Incorporated
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N and P-Channel | 9.5A (Ta), 6.8A (Ta) | 12V, 20V | Standard | 15.6nC @ 4.5V, 15.4nC @ 4.5V | 1495pF @ 6V, 1745pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 2.3W (Ta) | 17mOhm @ 11.8A, 4.5V, 35mOhm @ 8.9A, 4.5V | PowerDI5060-8 | MOSFET (Metal Oxide) | 1.5V @ 250µA | |
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Diodes Incorporated
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2 N-Channel (Dual) | 10A (Ta), 46.2A (Tc) | 40V | - | 12.3nC @ 10V | 881pF @ 20V | Surface Mount | -55°C ~ 175°C (TJ) | 2.67W (Ta), 39.4W (Tc) | 12.3mOhm @ 20A, 10V | PowerDI5060-8 (Type UXD) | MOSFET (Metal Oxide) | 2.3V @ 250µA | |
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Microchip Technology
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2 N Channel (Phase Leg) | 124A (Tc) | 700V | - | 215nC @ 20V | 4500pF @ 700V | Chassis Mount | -40°C ~ 175°C (TJ) | 365W (Tc) | 19mOhm @ 40A, 20V | - | Silicon Carbide (SiC) | 2.4V @ 4mA | |
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Nexperia USA Inc.
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Nexperia USA Inc.
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2 N-Channel (Dual) | 40A (Ta) | 60V | - | 22.4nC @ 5V | 2953pF @ 25V | Surface Mount | -55°C ~ 175°C (TJ) | 64W (Ta) | 12.5mOhm @ 10A, 5V | LFPAK56D | MOSFET (Metal Oxide) | 2.1V @ 1mA | |
Diodes Incorporated
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N and P-Channel Complementary | 9A (Ta), 6.5A (Ta) | 40V | - | 8.8nC @ 4.5V, 10.6nC @ 4.5V | 1060pF @ 20V, 1154pF @ 20V | Surface Mount | -55°C ~ 150°C (TJ) | 1.8W (Ta) | 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V | 8-SO | MOSFET (Metal Oxide) | 3V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
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2 N-Channel (Dual) Common Drain | - | 20V | Logic Level Gate | 13nC @ 4.5V | 1100pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W | 17mOhm @ 6A, 4.5V | 8-DFN (3x3) | MOSFET (Metal Oxide) | 1.1V @ 250µA | |
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On Semiconductor
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2 N-Channel (Dual) Common Source | 51A (Tc) | 1200V (1.2kV) | - | 213.5nC @ 20V | 2420pF @ 800V | Chassis Mount | -40°C ~ 150°C (TJ) | 119W (Tj) | 30mOhm @ 50A, 20V | - | Silicon Carbide (SiC) | 4.3V @ 20mA | |
Diodes Incorporated
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2 N-Channel (Dual) | 4.7A | 20V | - | 15nC @ 8V | 713pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.4W | 40mOhm @ 4.2A, 4.5V | U-DFN2020-6 (Type B) | MOSFET (Metal Oxide) | 1.4V @ 250µA | |
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Diodes Incorporated
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N and P-Channel | 4.7A, 3.2A | 20V | - | 15nC @ 8V | 713pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.4W | 40mOhm @ 4.2A, 4.5V | U-DFN2020-6 (Type B) | MOSFET (Metal Oxide) | 1.4V @ 250µA | |
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Microchip Technology
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2 N Channel (Phase Leg) | 89A (Tc) | 1200V (1.2kV) | - | 232nC @ 20V | 3020pF @ 1000V | Chassis Mount | -40°C ~ 175°C (TJ) | 395W (Tc) | 31mOhm @ 40A, 20V | - | Silicon Carbide (SiC) | 2.8V @ 3mA | |
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Vishay
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2 N-Channel (Dual) | 11A | 24V | - | - | - | Surface Mount | -55°C ~ 150°C (TJ) | 5.7W | 28mOhm @ 1A, 4.5V | 6-Micro Foot™ (1.5x1) | MOSFET (Metal Oxide) | 900mV @ 250µA | |
PANJIT
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2 N-Channel (Dual) | 6A (Ta) | 60V | - | 28nC @ 10V | 1680pF @ 20V | Surface Mount | -55°C ~ 150°C (TJ) | 1.7W (Ta) | 21mOhm @ 5.5A, 10V | 8-SOP | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
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Infineon Technologies
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2 N-Channel | 25A | 1200V | - | 74nC @ 18V | 2200pF @ 800V | Chassis Mount | -40°C ~ 150°C (TJ) | - | 32.3mOhm @ 25A, 18V | - | - | 5.15V @ 10mA | |
ALPHA & OMEGA SEMICONDU CTOR
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2 N-Channel (Dual) Common Drain | 12A (Ta) | 20V | - | 35nC @ 4.5V | 2170pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.7W | 6.5mOhm @ 12A, 4.5V | 6-DFN-EP (2x5) | MOSFET (Metal Oxide) | 1.3V @ 250µA | |
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PANJIT
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N and P-Channel Complementary | 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc) | 30V | - | 7.8nC @ 10V | 343pF @ 15V, 870pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 2W (Ta), 17.8W (Tc) | 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V | DFN3030B-8 | MOSFET (Metal Oxide) | 2.1V @ 250µA, 2.5V @ 250µA | |
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Microchip Technology
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2 N Channel (Phase Leg) | 124A (Tc) | 700V | - | 215nC @ 20V | 4500pF @ 700V | Chassis Mount | -40°C ~ 175°C (TJ) | 365W (Tc) | 19mOhm @ 40A, 20V | - | Silicon Carbide (SiC) | 2.4V @ 4mA | |
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Harris Semiconductor
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Sanyo Denki
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Vishay
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N and P-Channel | 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc) | 60V | - | 11nC @ 10V, 22nC @ 10V | 420pF @ 30V, 650pF @ 30V | Surface Mount | -55°C ~ 150°C (TJ) | 2W (Ta), 3.6W (Tc) | 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 3V @ 250µA | |
Renesas
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2 N-Channel (Dual) | 8.6A | 20V | Logic Level Gate | 8nC @ 4V | 520pF @ 10V | Surface Mount | - | 700mW | 17.5mOhm @ 4A, 4.5V | 6-HWSON | MOSFET (Metal Oxide) | 1.5V @ 1mA | |
On Semiconductor
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2 N-Channel (Dual) | 9.6A | 20V | Logic Level Gate | 17nC @ 4.5V | 1299pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 2.1W | 14mOhm @ 9.6A, 4.5V | 18-BGA (2.5x4) | MOSFET (Metal Oxide) | 1.5V @ 250µA | |
On Semiconductor
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2 N-Channel (Dual) | 2A | 50V | Logic Level Gate | 15nC @ 10V | - | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 300mOhm @ 1.5A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 4V @ 250µA | |
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Diodes Incorporated
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2 N-Channel (Dual) | 10.2A (Ta), 27.5A (Tc) | 40V | - | 11.2nC @ 10V | 750pF @ 20V | Surface Mount | -55°C ~ 175°C (TJ) | 1.16W (Ta) | 15mOhm @ 20A, 10V | PowerDI3333-8 (Type UXD) | MOSFET (Metal Oxide) | 3V @ 250µA | |
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Diodes Incorporated
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2 N-Channel (Dual) | 10.2A (Ta), 27.5A (Tc) | 40V | - | 11.2nC @ 10V | 750pF @ 20V | Surface Mount | -55°C ~ 175°C (TJ) | 1.16W (Ta) | 15mOhm @ 20A, 10V | PowerDI3333-8 (Type UXD) | MOSFET (Metal Oxide) | 3V @ 250µA | |
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ALPHA & OMEGA SEMICONDU CTOR
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2 N-Channel (Dual) Common Drain | - | 20V | Logic Level Gate | 13nC @ 4.5V | 1100pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W | 22mOhm @ 4A, 4.5V | 8-DFN (3x3) | MOSFET (Metal Oxide) | 1.1V @ 250µA | |
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Micro Commercial Co.
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- | 6.5A (Ta), 5A (Ta) | 30V | Standard | 5.2nC @ 10V, 9.2nC @ 10V | 255pF @ 15V, 520pF @ 15V | Surface Mount | -55°C ~ 150°C | 2W | 30mOhm @ 5A, 10V, 60mOhm @ 4A, 10V | 8-SOP | MOSFET (Metal Oxide) | 2.4V @ 250µA, 2.5V @ 250µA | |
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Infineon Technologies
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Sanyo Denki
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Diodes Incorporated
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2 N-Channel (Dual) | 1.7A | 20V | Logic Level Gate | 3.8nC @ 4.5V | 279pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.1W | 200mOhm @ 1A, 4.5V | SOT-23-6 | MOSFET (Metal Oxide) | 1V @ 250µA | |
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Diodes Incorporated
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- | 10.3A (Ta) | 20V | Standard | 17.5nC @ 4V | 1780pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 900mW | 11.9mOhm @ 2.5A, 4.5V | X4-DSN1717-4 | MOSFET (Metal Oxide) | 1.4V @ 640µA | |
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Infineon Technologies
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Diodes Incorporated
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N and P-Channel | 5.6A, 3.8A | 12V | - | 19.6nC @ 8V | 914pF @ 6V | Surface Mount | -55°C ~ 150°C (TJ) | 1.4W | 29mOhm @ 5A, 4.5V | U-DFN2020-6 (Type B) | MOSFET (Metal Oxide) | 1V @ 250µA | |
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Diodes Incorporated
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N and P-Channel | 6A, 3.4A | 12V, 20V | - | 18.5nC @ 8V | 787pF @ 6V | Surface Mount | -55°C ~ 150°C (TJ) | 1.36W | 25mOhm @ 5.2A, 4.5V | U-DFN2020-6 (Type B) | MOSFET (Metal Oxide) | 1V @ 250µA |
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