What are Transistors - FETs, MOSFETs - Arrays ?
Transistors - FETs, MOSFETs - Arrays are semiconductor devices that control the flow of electrical signals, commonly used in power management applications. They are integral in industrial power management, new product design, and production electronics assembly. Important specifications include Configuration, which determines the transistor's arrangement for optimal performance; Drain to Source Voltage (Vdss), which defines the maximum voltage the transistor can handle; and Gate Charge (Qg) (Max) @ Vgs, which affects switching speed and efficiency. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.
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| Part & Mfr | Total Stock | Pricing & RFQ | Configuration | Current | Drain to Source Voltage (Vdss) | FET Feature | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs(th) (Max) @ Id | |
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Vishay
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10
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Price on request
10
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2 N-Channel (Dual) | 8A | 30V | - | 23nC @ 10V | 865pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 3.1W | 22mOhm @ 7.5A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 2.4V @ 250µA | |
On Semiconductor
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10
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Price on request
10
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2 N-Channel (Dual) | 14A (Ta), 74A (Tc) | 80V | - | 32nC @ 10V | 2002pF @ 40V | Surface Mount | -55°C ~ 175°C (TJ) | - | 6.9mOhm @ 20A, 10V | 8-DFN (5x6) Dual Flag (SO8FL-Dual) | MOSFET (Metal Oxide) | 2V @ 96µA | |
ROHM Semiconductor
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8
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Price on request
8
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N and P-Channel | 3.4A, 2.6A | 80V | Logic Level Gate | 9.2nC @ 5V | 600pF @ 10V | Surface Mount | 150°C (TJ) | 2W | 130mOhm @ 3.4A, 10V | 8-SOP | MOSFET (Metal Oxide) | 2.5V @ 1mA | |
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Texas Instruments
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5
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Price on request
5
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2 N-Channel (Dual) | 5A | 20V | Logic Level Gate, 5V Drive | 5.4nC @ 4.5V | 469pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 2.3W | 27mOhm @ 5A, 4.5V | 6-WSON (2x2) | MOSFET (Metal Oxide) | 1.2V @ 250µA | |
Diodes Incorporated
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5
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Price on request
5
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N and P-Channel | 2A | 100V | Logic Level Gate | 9.2nC @ 10V | 497pF @ 50V | Surface Mount | -55°C ~ 150°C (TJ) | 1.8W | 230mOhm @ 1A, 10V | 8-SO | MOSFET (Metal Oxide) | 2.4V @ 250µA | |
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Vishay
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5
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Price on request
5
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2 N-Channel (Dual) | 9.2A | 40V | Logic Level Gate | 15nC @ 10V | 580pF @ 20V | Surface Mount | -55°C ~ 150°C (TJ) | 3.1W | 20mOhm @ 10A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 2.5V @ 250µA | |
On Semiconductor
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2
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Price on request
2
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2 N-Channel (Dual) | 6A | 20V | Logic Level Gate | 17nC @ 4.5V | 1290pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 600mW | 18mOhm @ 6A, 4.5V | 8-TSSOP | MOSFET (Metal Oxide) | 1.5V @ 250µA | |
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Infineon Technologies
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1
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Price on request
1
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2 N-Channel (Dual) | 9.7A | 30V | Logic Level Gate | 9nC @ 4.5V | 760pF @ 15V | Surface Mount | -55°C ~ 175°C (TJ) | 2W | 15.5mOhm @ 9.7A, 10V | 8-SO | MOSFET (Metal Oxide) | 2.35V @ 25µA | |
Advanced Linear Devices Inc.
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2 N-Channel (Dual) Matched Pair | 12mA, 3mA | 10.6V | Depletion Mode | - | 2.5pF @ 5V | Surface Mount | 0°C ~ 70°C (TJ) | 500mW | 500Ohm @ 3.6V | 8-SOIC | MOSFET (Metal Oxide) | 360mV @ 1µA | |
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Infineon Technologies
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- | - | 1200V (1.2kV) | - | - | - | Chassis Mount | - | - | - | AG-EASY1B | MOSFET (Metal Oxide) | - | |
NXP Semiconductors
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Advanced Linear Devices Inc.
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2 N-Channel (Dual) Matched Pair | - | 10.6V | - | - | 2.5pF @ 5V | Surface Mount | 0°C ~ 70°C (TJ) | 500mW | 500Ohm @ 4.2V | 8-SOIC | MOSFET (Metal Oxide) | 220mV @ 1µA | |
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Texas Instruments
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2 N-Channel (Dual) | 5A | 20V | Logic Level Gate, 5V Drive | 5.4nC @ 4.5V | 469pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 2.3W | 27mOhm @ 5A, 4.5V | 6-WSON (2x2) | MOSFET (Metal Oxide) | 1.2V @ 250µA | |
Nexperia USA Inc.
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2 P-Channel (Dual) | 3.6A | 20V | Logic Level Gate | 9.5nC @ 4.5V | 804pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 515mW | 67mOhm @ 2A, 4.5V | 6-HUSON (2x2) | MOSFET (Metal Oxide) | 950mV @ 250µA | |
WOLFSPEED
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2 N-Channel (Half Bridge) | 450A (Tc) | 1200V (1.2kV) | - | 1330nC @ 15V | 38000pF @ 800V | Chassis Mount | -40°C ~ 175°C (TJ) | 50mW | 3.7mOhm @ 450A, 15V | - | Silicon Carbide (SiC) | 3.6V @ 132mA | |
WOLFSPEED
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2 N-Channel (Half Bridge) | 468A (Tc) | 1200V (1.2kV) | - | 1040nC @ 15V | 29700pF @ 800V | Chassis Mount | -40°C ~ 175°C (TJ) | - | 4.25mOhm @ 400A, 15V | Module | Silicon Carbide (SiC) | 3.6V @ 106mA | |
ROHM Semiconductor
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2 N-Channel (Half Bridge) | 204A (Tc) | 1200V (1.2kV) | - | - | 18000pF @ 10V | Chassis Mount | -40°C ~ 150°C (TJ) | 1360W (Tc) | - | Module | Silicon Carbide (SiC) | 4V @ 35.2mA | |
Microchip Technology
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2 N Channel (Phase Leg) | 337A (Tc) | 1200V (1.2kV) | - | 928nC @ 20V | 12.08pF @ 1000V | Chassis Mount | -40°C ~ 175°C (TJ) | 1.409kW (Tc) | 7.8mOhm @ 160A, 20V | SP3F | Silicon Carbide (SiC) | 2.8V @ 4mA | |
On Semiconductor
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2 N-Channel (Dual) | 12A, 16A | 30V | Logic Level Gate | 18nC @ 10V | 1130pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 800mW | 9mOhm @ 12A, 10V | 8-Power33 (3x3) | MOSFET (Metal Oxide) | 3V @ 250µA | |
Toshiba
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2 P-Channel (Dual) | 4A (Ta) | 20V | Logic Level Gate, 1.8V Drive | 6.74nC @ 4.5V | 480pF @ 10V | Surface Mount | 150°C | 1W (Ta) | 45mOhm @ 3.5A, 10V | 6-µDFN (2x2) | MOSFET (Metal Oxide) | 1.2V @ 1mA | |
ROHM Semiconductor
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2 N-Channel (Dual) | 80A (Tc) | 1200V (1.2kV) | - | - | 800pF @ 10V | Chassis Mount | 175°C (TJ) | 600W | - | Module | Silicon Carbide (SiC) | 4V @ 13.2mA | |
Infineon Technologies
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2 N-Channel (Half Bridge) | 85A (Tj) | 1200V | - | 297nC @ 18V | 8800pF @ 800V | Chassis Mount | -40°C ~ 175°C (TJ) | 20mW | 12mOhm @ 100A, 18V | AG-EASY2B | Silicon Carbide (SiC) | 5.15V @ 40mA | |
Infineon Technologies
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6 N-Channel (Full Bridge) | 15A (Tj) | 1200V | - | 45nC @ 18V | 1350pF @ 800V | Chassis Mount | -40°C ~ 175°C (TJ) | 20mW | 79mOhm @ 15A, 18V | AG-EASY1B | Silicon Carbide (SiC) | 5.15V @ 6mA | |
Sanken
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3 N and 3 P-Channel (3-Phase Bridge) | 2.5A | 500V | - | - | - | Through Hole | - | - | - | 12-SIP | MOSFET (Metal Oxide) | - | |
Nexperia USA Inc.
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2 N-Channel (Dual) | 21A (Ta) | 80V | Logic Level Gate | 23.1nC @ 5V | 3115pF @ 25V | Surface Mount | -55°C ~ 175°C (TJ) | 64W | 19mOhm @ 10A, 10V | LFPAK56D | MOSFET (Metal Oxide) | 2.1V @ 1mA | |
Advanced Linear Devices Inc.
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4 P-Channel, Matched Pair | - | 8V | - | - | 2.5pF @ 5V | Through Hole | 0°C ~ 70°C | 500mW | - | 16-PDIP | MOSFET (Metal Oxide) | 20mV @ 1µA | |
Advanced Linear Devices Inc.
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N and P-Channel Complementary | - | 10.6V | - | - | 3pF @ 5V | Through Hole | 0°C ~ 70°C (TJ) | 500mW | 1800Ohm @ 5V | 8-PDIP | MOSFET (Metal Oxide) | 1V @ 1µA | |
Texas Instruments
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2 N-Channel (Dual) Common Drain | - | - | - | 7.8nC @ 4.5V | - | Surface Mount | -55°C ~ 150°C (TJ) | 1.7W | - | 4-Picostar (1.31x1.31) | MOSFET (Metal Oxide) | - | |
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Diodes Incorporated
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2 N-Channel (Dual) | 5.9A | 20V | Logic Level Gate | 22.1nC @ 5V | 1880pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.8W | 25mOhm @ 5.9A, 4.5V | 8-SO | MOSFET (Metal Oxide) | 700mV @ 250µA (Min) | |
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Diodes Incorporated
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2 N-Channel (Dual) | 3.8A | 60V | Logic Level Gate | 20.4nC @ 10V | 1063pF @ 30V | Surface Mount | -55°C ~ 150°C (TJ) | 1.8W | 50mOhm @ 3.6A, 10V | 8-SO | MOSFET (Metal Oxide) | 1V @ 250µA (Min) | |
Texas Instruments
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2 P-Channel (Dual) Common Source | 1.6A | 20V | Logic Level Gate | 2.5nC @ 4.5V | 410pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 750mW | 68mOhm @ 1A, 4.5V | 6-DSBGA (1x1.5) | MOSFET (Metal Oxide) | 1.1V @ 250µA | |
PANJIT
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2 N-Channel (Dual) | 5.2A (Ta) | 20V | - | 7nC @ 4.5V | 513pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.25W (Ta) | 29mOhm @ 5.2A, 4.5V | SOT-23-6 | MOSFET (Metal Oxide) | 1.2V @ 250µA | |
PANJIT
|
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N and P-Channel Complementary | 500mA (Ta) | 20V | Logic Level Gate, 1.2V Drive | 1.4nC @ 4.5V | 67pF @ 10V, 38pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 350mW (Ta) | 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V | SOT-363 | MOSFET (Metal Oxide) | 1V @ 250µA | |
Micro Commercial Co.
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2 N-Channel (Dual) Common Drain | 4A (Tc) | 20V | - | 4.2nC @ 4.5V | 620pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 1.25W (Ta) | 25mOhm @ 4A, 4.5V | SOT-23-6L | MOSFET (Metal Oxide) | 1V @ 250µA | |
ROHM Semiconductor
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2 N-Channel (Half Bridge) | 600A (Tc) | 1200V (1.2kV) | - | - | 31000pF @ 10V | Chassis Mount | -40°C ~ 150°C (TJ) | 2450W (Tc) | - | Module | Silicon Carbide (SiC) | 5.6V @ 182mA | |
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ROHM Semiconductor
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2 N-Channel (Half Bridge) | 120A (Tc) | 1200V (1.2kV) | - | - | 14000pF @ 10V | - | -40°C ~ 150°C (TJ) | 780W | - | Module | Silicon Carbide (SiC) | 2.7V @ 22mA | |
Linear Integrated Systems, Inc.
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4 N-Channel | 50mA (Ta) | 20V | - | - | - | Surface Mount | -55°C ~ 150°C (TJ) | 500mW (Ta) | 75Ohm @ 1mA, 5V | 14-SOIC | MOSFET (Metal Oxide) | 1.5V @ 1µA | |
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PANJIT
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2 P-Channel (Dual) | 2.6A (Ta) | 30V | - | 9.8nC @ 10V | 396pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.25W (Ta) | 115mOhm @ 2.6A, 10V | SOT-23-6 | MOSFET (Metal Oxide) | 2.1V @ 250µA | |
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Infineon Technologies
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2 P-Channel (Dual) | - | 30V | Logic Level Gate | 34nC @ 10V | 710pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 2W | 58mOhm @ 4.9A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 3V @ 250µA | |
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Infineon Technologies
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2 N-Channel (Dual) | 6.9A | 30V | Logic Level Gate | 33nC @ 10V | 755pF @ 25V | Surface Mount | -55°C ~ 175°C (TJ) | 2.4W | 29mOhm @ 6.9A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 3V @ 250µA | |
ROHM Semiconductor
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N and P-Channel | 3A (Ta), 2.5A (Ta) | 100V | - | 8.5nC @ 5V, 12.5nC @ 5V | 610pF @ 25V, 1550pF @ 25V | Surface Mount | 150°C (TJ) | 1.4W (Ta) | 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V | 8-SOP | MOSFET (Metal Oxide) | 2.5V @ 1mA | |
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Infineon Technologies
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N and P-Channel | 4A, 3A | 30V | Logic Level Gate | 25nC @ 4.5V | 520pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1.4W | 50mOhm @ 2.4A, 10V | 8-SOIC | MOSFET (Metal Oxide) | 3V @ 250µA | |
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ROHM Semiconductor
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2 N-Channel (Dual) | 4.5A (Ta) | 60V | - | 10nC @ 5V | 500pF @ 10V | Surface Mount | 150°C (TJ) | 1.4W (Ta) | 65mOhm @ 4.5A, 10V | 8-SOP | MOSFET (Metal Oxide) | 2.5V @ 1mA | |
Diodes Incorporated
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2 N-Channel (Dual) | 6.2A | 30V | - | 10.6nC @ 10V | 500pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 1W | 30mOhm @ 5.8A, 10V | U-DFN2020-6 (Type B) | MOSFET (Metal Oxide) | 2V @ 250µA | |
Taiwan Semiconductor
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2 N-Channel (Dual) | 5.8A (Tc) | 20V | - | 7.7nC @ 4.5V | 775pF @ 10V | Surface Mount | -55°C ~ 150°C (TJ) | 620mW | 25mOhm @ 4A, 4.5V | 6-TDFN (2x2) | MOSFET (Metal Oxide) | 800mV @ 250µA | |
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ROHM Semiconductor
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N and P-Channel | 4.5A, 3.5A | 45V | - | 9.6nC @ 5V | 550pF @ 10V | Surface Mount | 150°C (TJ) | 2W | 46mOhm @ 4.5A, 10V | 8-SOP | MOSFET (Metal Oxide) | 2.5V @ 1mA | |
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Texas Instruments
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- | - | - | - | - | - | - | - | - | - | - | - | - | |
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Infineon Technologies
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N and P-Channel | - | 30V | Logic Level Gate | 33nC @ 10V | 650pF @ 25V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W | 29mOhm @ 5.8A, 10V | 8-SO | MOSFET (Metal Oxide) | 1V @ 250µA | |
Vishay
|
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2 N-Channel (Half Bridge) | 60A (Tc) | 30V | - | 22nC @ 4.5V, 92nC @ 4.5V | 2000pF @ 15V, 8200pF @ 15V | Surface Mount | -55°C ~ 150°C (TA) | 38W (Tc), 83W (Tc) | 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V | 8-PowerPair® (6x5) | MOSFET (Metal Oxide) | 2.2V @ 250µA | |
Infineon Technologies
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2 N Channel (Dual Buck Chopper) | 15A | 30V | - | 17nC @ 10V | 1157pF @ 15V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W | 5mOhm @ 20A, 10V | PG-TISON-8 | MOSFET (Metal Oxide) | 2V @ 250µA |
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