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Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistors - Bipolar (BJT) - Single, Pre-Biased facilitate signal amplification and switching in electronic circuits. Key attributes include Current, DC Current Gain (hFE) (Min) @ Ic, and Vce Saturation (Max) @ Ib. These components are essential for new product design and prototyping.

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What are Transistors - Bipolar (BJT) - Single, Pre-Biased ?

Transistors - Bipolar (BJT) - Single, Pre-Biased are semiconductor devices that amplify current and are commonly used in various electronic applications. They are utilized in new product design, production electronics assembly, and maintenance tasks. Important specifications for selection include DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; Vce Saturation (Max) @ Ib, Ic, which impacts power loss; and Frequency, which determines the operational speed of the transistor. Ensuring compatibility with existing designs and validating lifecycle status are crucial for effective procurement.

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Part & Mfr Total Stock Pricing & RFQ Current DC Current Gain (hFE) (Min) @ Ic, Vce Frequency Mounting Type Power Resistor Supplier Device Package Transistor Type Vce Saturation (Max) @ Ib, Ic Voltage
FJNS3211RTA
FJNS3211RTA
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 100 mA 100 @ 1mA, 5V 250 MHz Through Hole 300 mW 22 kΩ TO-92S NPN - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS3215RTA
FJNS3215RTA
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 100 mA 33 @ 10mA, 5V 250 MHz Through Hole 300 mW 10 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3202RBU
FJNS3202RBU
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 100 mA 30 @ 5mA, 5V 250 MHz Through Hole 300 mW 10 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3215RBU
FJNS3215RBU
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 100 mA 33 @ 10mA, 5V 250 MHz Through Hole 300 mW 10 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3210RTA
FJNS3210RTA
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 100 mA 100 @ 1mA, 5V 250 MHz Through Hole 300 mW 10 kΩ TO-92S NPN - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS3212RBU
FJNS3212RBU
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 100 mA 100 @ 1mA, 5V 250 MHz Through Hole 300 mW 47 kΩ TO-92S NPN - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS3209RTA
FJNS3209RTA
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 100 mA 100 @ 1mA, 5V 250 MHz Through Hole 300 mW 4.7 kΩ TO-92S NPN - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS3204RBU
FJNS3204RBU
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 100 mA 68 @ 5mA, 5V 250 MHz Through Hole 300 mW 47 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3205RBU
FJNS3205RBU
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 100 mA 30 @ 5mA, 5V 250 MHz Through Hole 300 mW 10 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3213RBU
FJNS3213RBU
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 100 mA 68 @ 5mA, 5V 250 MHz Through Hole 300 mW 47 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3201RBU
FJNS3201RBU
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 100 mA 20 @ 10mA, 5V 250 MHz Through Hole 300 mW 4.7 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3204RTA
FJNS3204RTA
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 100 mA 68 @ 5mA, 5V 250 MHz Through Hole 300 mW 47 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3214RBU
FJNS3214RBU
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 100 mA 68 @ 5mA, 5V 250 MHz Through Hole 300 mW 47 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3203RBU
FJNS3203RBU
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 100 mA 56 @ 5mA, 5V 250 MHz Through Hole 300 mW 22 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3211RBU
FJNS3211RBU
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 100 mA 100 @ 1mA, 5V 250 MHz Through Hole 300 mW 22 kΩ TO-92S NPN - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS3209RBU
FJNS3209RBU
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 100 mA 100 @ 1mA, 5V 250 MHz Through Hole 300 mW 4.7 kΩ TO-92S NPN - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS3203RTA
FJNS3203RTA
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 100 mA 56 @ 5mA, 5V 250 MHz Through Hole 300 mW 22 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3214RTA
FJNS3214RTA
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 100 mA 68 @ 5mA, 5V 250 MHz Through Hole 300 mW 47 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3207RBU
FJNS3207RBU
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 100 mA 68 @ 5mA, 5V 250 MHz Through Hole 300 mW 47 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3212RTA
FJNS3212RTA
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 100 mA 100 @ 1mA, 5V 250 MHz Through Hole 300 mW 47 kΩ TO-92S NPN - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS3210RBU
FJNS3210RBU
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 100 mA 100 @ 1mA, 5V 250 MHz Through Hole 300 mW 10 kΩ TO-92S NPN - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS3208RTA
FJNS3208RTA
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 100 mA 56 @ 5mA, 5V 250 MHz Through Hole 300 mW 22 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3207RTA
FJNS3207RTA
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 100 mA 68 @ 5mA, 5V 250 MHz Through Hole 300 mW 47 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3213RTA
FJNS3213RTA
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 100 mA 68 @ 5mA, 5V 250 MHz Through Hole 300 mW 47 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS3205RTA
FJNS3205RTA
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 100 mA 30 @ 5mA, 5V 250 MHz Through Hole 300 mW 10 kΩ TO-92S NPN - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJV4112RMTF
FJV4112RMTF
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 100 mA 100 @ 1mA, 5V 200 MHz Surface Mount 200 mW 47 kΩ SOT-23-3 PNP - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJV4106RMTF
FJV4106RMTF
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 100 mA 68 @ 5mA, 5V 200 MHz Surface Mount 200 mW 47 kΩ SOT-23-3 PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJV4107RMTF
FJV4107RMTF
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 100 mA 68 @ 5mA, 5V 200 MHz Surface Mount 200 mW 47 kΩ SOT-23-3 PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJV4111RMTF
FJV4111RMTF
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 100 mA 100 @ 1mA, 5V 200 MHz Surface Mount 200 mW 22 kΩ SOT-23-3 PNP - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJV4105RMTF
FJV4105RMTF
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 100 mA 30 @ 5mA, 5V 200 MHz Surface Mount 200 mW 10 kΩ SOT-23-3 PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJV4108RMTF
FJV4108RMTF
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 100 mA 56 @ 5mA, 5V 200 MHz Surface Mount 200 mW 22 kΩ SOT-23-3 PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4214RTA
FJNS4214RTA
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 100 mA 68 @ 5mA, 5V 200 MHz Through Hole 300 mW 47 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4214RBU
FJNS4214RBU
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 100 mA 68 @ 5mA, 5V 200 MHz Through Hole 300 mW 47 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4212RTA
FJNS4212RTA
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 100 mA 100 @ 1mA, 5V 200 MHz Through Hole 300 mW 47 kΩ TO-92S PNP - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS4210RBU
FJNS4210RBU
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 100 mA 100 @ 1mA, 5V 200 MHz Through Hole 300 mW 10 kΩ TO-92S PNP - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS4205RBU
FJNS4205RBU
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 100 mA 30 @ 5mA, 5V 200 MHz Through Hole 300 mW 10 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4205RTA
FJNS4205RTA
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 100 mA 30 @ 5mA, 5V 200 MHz Through Hole 300 mW 10 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4201RTA
FJNS4201RTA
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 100 mA 20 @ 10mA, 5V 200 MHz Through Hole 300 mW 4.7 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4211RTA
FJNS4211RTA
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 100 mA 100 @ 1mA, 5V 200 MHz Through Hole 300 mW 22 kΩ TO-92S PNP - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS4207RTA
FJNS4207RTA
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 100 mA 68 @ 5mA, 5V 200 MHz Through Hole 300 mW 47 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4212RBU
FJNS4212RBU
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 100 mA 100 @ 1mA, 5V 200 MHz Through Hole 300 mW 47 kΩ TO-92S PNP - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS4213RBU
FJNS4213RBU
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 100 mA 68 @ 5mA, 5V 200 MHz Through Hole 300 mW 47 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4208RTA
FJNS4208RTA
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 100 mA 56 @ 5mA, 5V 200 MHz Through Hole 300 mW 22 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4213RTA
FJNS4213RTA
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 100 mA 68 @ 5mA, 5V 200 MHz Through Hole 300 mW 47 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4210RTA
FJNS4210RTA
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 100 mA 100 @ 1mA, 5V 200 MHz Through Hole 300 mW 10 kΩ TO-92S PNP - Pre-Biased 300mV @ 1mA, 10mA 40 V
FJNS4206RBU
FJNS4206RBU
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 100 mA 68 @ 5mA, 5V 200 MHz Through Hole 300 mW 47 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4204RBU
FJNS4204RBU
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 100 mA 68 @ 5mA, 5V 200 MHz Through Hole 300 mW 47 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4207RBU
FJNS4207RBU
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 100 mA 68 @ 5mA, 5V 200 MHz Through Hole 300 mW 47 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4208RBU
FJNS4208RBU
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 100 mA 56 @ 5mA, 5V 200 MHz Through Hole 300 mW 22 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
FJNS4202RBU
FJNS4202RBU
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 100 mA 30 @ 5mA, 5V 200 MHz Through Hole 300 mW 10 kΩ TO-92S PNP - Pre-Biased 300mV @ 500µA, 10mA 50 V
Showing 2351-2400 of 3,840 products

About Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistors - Bipolar (BJT) - Single, Pre-Biased are essential components in the realm of discrete semiconductor products, providing reliable performance for a variety of electronic applications. These transistors are specifically designed to facilitate efficient switching and amplification in circuits, making them ideal for use in new product designs, prototyping, and production electronics assembly.

When sourcing these components, it is crucial to consider important attributes such as current ratings, DC current gain (hFE) at specified collector currents (Ic) and collector-emitter voltages (Vce), as well as frequency specifications. Understanding these parameters will help ensure that the selected transistors meet the specific requirements of your application.

Applications for Transistors - Bipolar (BJT) - Single, Pre-Biased include engineering evaluation and qualification, maintenance and field replacement, and procurement-driven multi-sourcing. Buyers should prioritize comparing critical specifications to validate lifecycle status and explore alternate-source options before submitting RFQs.

For optimal performance, confirm the mechanical and electrical compatibility of these transistors with existing design constraints. It is advisable to utilize parametric filtering to streamline the sourcing process and reduce risks associated with component selection.

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