What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Vishay Dale
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1 µA @ 39 V | 60 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±5.88% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 30 V | 40 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±5.13% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 82 V | 250 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±5.45% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 22 V | 15 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.67% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 180 V | 850 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±5.83% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 91 V | 250 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±5.42% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 56 V | 100 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 68 V | 200 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.04% | 1.2 V @ 500 mA | |
On Semiconductor
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500 nA @ 35.8 V | 67 Ω | Surface Mount | -65°C ~ 150°C | 1.5 W | SMA | ±5% | 1.5 V @ 200 mA | |
On Semiconductor
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1 µA @ 47.1 V | 100 Ω | Surface Mount | -65°C ~ 150°C | 3 W | SMB | ±5% | 1.5 V @ 200 mA | |
Renesas
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Vishay Dale
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1.5 mA @ 4.7 V | 2 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.45% | 1.2 V @ 500 mA | |
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Vishay Dale
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1.5 mA @ 4.7 V | 2 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.45% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 15 V | 15 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6% | 1.2 V @ 500 mA | |
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Vishay Dale
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600 µA @ 6.2 V | 2 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.1% | 1.2 V @ 500 mA | |
Taiwan Semiconductor
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1 µA @ 11.5 V | 3 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 5 W | DO-214AB (SMC) | ±5% | 15 V | |
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Central Semiconductor Corp
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100 nA @ 1 V | 8 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 200 mA | |
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Central Semiconductor Corp
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2 µA @ 1 V | 22 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 200 mA | |
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Central Semiconductor Corp
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100 nA @ 1 V | 30 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 200 mA | |
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Central Semiconductor Corp
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500 nA @ 29.7 V | 14 Ω | Surface Mount | -65°C ~ 150°C | 2 W | SMC | ±5% | 1.2 V @ 1 A | |
Microchip Technology
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10 nA @ 76 V | 250 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
Microchip Technology
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50 nA @ 9.9 V | 200 Ω | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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50 nA @ 11.4 V | 100 Ω | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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500 nA @ 7.6 V | 200 Ω | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 1.1 V @ 200 mA | |
Microchip Technology
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2 µA @ 3 V | 10 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±5% | 6.2 V | |
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Microchip Technology
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2 µA @ 3 V | 10 Ω | Through Hole | -55°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 5.89 V | |
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Microchip Technology
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- | 20 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-7 | ±5% | 9 V | |
Renesas
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Renesas
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Microchip Technology
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5 µA @ 3 V | 1500 Ω | Surface Mount | -65°C ~ 175°C | 500 mW | DO-213AA | ±5% | 1.1 V @ 200 mA | |
Microchip Technology
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10 µA @ 4 V | 1400 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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2 µA @ 27.4 V | 11 Ω | Through Hole | -65°C ~ 175°C | 5 W | - | ±5% | 1.5 V @ 1 A | |
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Microchip Technology
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5 µA @ 13.7 V | 4 Ω | Through Hole | -65°C ~ 175°C | 5 W | - | ±5% | 1.5 V @ 1 A | |
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Microchip Technology
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2 µA @ 3 V | 100 Ω | Through Hole | -55°C ~ 100°C | 500 mW | DO-35 (DO-204AH) | ±5% | 6.4 V | |
Microchip Technology
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10 µA @ 9.1 V | 2.5 Ω | Through Hole | -65°C ~ 175°C | 5 W | - | ±5% | 1.5 V @ 1 A | |
Renesas
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Microchip Technology
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50 nA @ 24 V | 20 Ω | Through Hole | -65°C ~ 175°C | 1.5 W | DO-204AL (DO-41) | ±5% | 1.5 V @ 1 A | |
Solid State Devices Inc (SSDI)
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50 µA @ 10 V | 1.2 Ω | Stud Mount | 175°C (TJ) | 20 W | DO-4 | ±6% | 15 V | |
Solid State Devices Inc (SSDI)
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50 µA @ 18 V | 2 Ω | Stud Mount | 175°C (TJ) | 20 W | DO-4 | ±7.04% | 27 V | |
Solid State Devices Inc (SSDI)
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50 µA @ 16 V | 2 Ω | Stud Mount | 175°C (TJ) | 20 W | DO-4 | ±6.67% | 24 V | |
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Microchip Technology
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2 µA @ 3 V | 25 Ω | Through Hole | -55°C ~ 100°C | 500 mW | DO-35 (DO-204AH) | ±5% | 6.4 V | |
Microchip Technology
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2 µA @ 3 V | 15 Ω | Through Hole | -55°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±5% | 6.2 V | |
Microchip Technology
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2 µA @ 3 V | 10 Ω | Through Hole | -55°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 6.2 V | |
Microchip Technology
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2 µA @ 15.2 V | 4.5 Ω | Surface Mount | -65°C ~ 175°C (TJ) | 5 W | D-5B | ±5% | 1.5 V @ 1 A | |
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Renesas
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Renesas
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Renesas
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Renesas
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Microchip Technology
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300 nA @ 8 V | 5 Ω | Surface Mount | -65°C ~ 175°C | 1.5 W | MELF, D5A | ±5% | 1.5 V @ 1 A | |
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Nexperia USA Inc.
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5 µA @ 2 V | 95 Ω | Surface Mount | 150°C (TJ) | 250 mW | TO-236AB | ±5% | 900 mV @ 10 mA |
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