What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|
Semtech
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500 nA @ 600 V | - | Through Hole | - | - | Axial | - | 1.2 V @ 1 A | |
Taiwan Semiconductor
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1 µA @ 33 V | 45 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±6.97% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 33 V | 45 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±6.97% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 36 V | 45 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±6.38% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 36 V | 45 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±6.38% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 36 V | 45 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±6.38% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 36 V | 45 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±6.38% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 39 V | 60 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 39 V | 60 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 39 V | 60 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 39 V | 60 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 43 V | 60 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±7.14% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 43 V | 60 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±7.14% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 43 V | 60 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±7.14% | 1.2 V @ 200 mA | |
Microsemi Corporation
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30 µA @ 1 V | 4.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±10% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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30 µA @ 1 V | 4.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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30 µA @ 1 V | 4.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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30 µA @ 1 V | 4.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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30 µA @ 1 V | 4.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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30 µA @ 1 V | 4.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±20% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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20 µA @ 1 V | 4 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±20% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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20 µA @ 1 V | 4 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±10% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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20 µA @ 1 V | 4 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±10% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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20 µA @ 1 V | 4 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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20 µA @ 1 V | 4 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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20 µA @ 1 V | 4 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Diodes Incorporated
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- | - | - | - | - | - | - | - | |
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Taiwan Semiconductor
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1 µA @ 43 V | 60 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±7.14% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 47 V | 80 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±6.45% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 47 V | 80 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±6.45% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 47 V | 80 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±6.45% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 47 V | 80 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±6.45% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 51 V | 80 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 51 V | 80 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 51 V | 80 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 51 V | 80 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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10 µA @ 3 V | 3 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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10 µA @ 3 V | 3 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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10 µA @ 3 V | 3 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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10 µA @ 3 V | 3 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | Sub SMA | ±5.88% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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20 µA @ 1 V | 4 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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20 µA @ 1 V | 4 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±20% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 32.7 V | 33 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±20% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 32.7 V | 33 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±10% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 32.7 V | 33 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±10% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 32.7 V | 33 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 32.7 V | 33 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 32.7 V | 33 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 32.7 V | 33 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 32.7 V | 33 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±20% | 1.2 V @ 200 mA |
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