What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation
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500 nA @ 9.9 V | 4.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
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Microsemi Corporation
|
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500 nA @ 9.9 V | 4.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Microsemi Corporation
|
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500 nA @ 121.6 V | 625 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±10% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 121.6 V | 625 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 121.6 V | 625 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
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Microsemi Corporation
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500 nA @ 121.6 V | 625 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Microsemi Corporation
|
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500 nA @ 121.6 V | 625 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
|
Microsemi Corporation
|
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500 nA @ 121.6 V | 625 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±20% | 1.2 V @ 200 mA | |
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Microsemi Corporation
|
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500 nA @ 12.2 V | 5.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±20% | 1.2 V @ 200 mA | |
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Microsemi Corporation
|
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500 nA @ 12.2 V | 5.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±10% | 1.2 V @ 200 mA | |
|
Microsemi Corporation
|
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Price on request
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500 nA @ 12.2 V | 5.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±10% | 1.2 V @ 200 mA | |
|
Microsemi Corporation
|
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Price on request
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500 nA @ 12.2 V | 5.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
|
Microsemi Corporation
|
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500 nA @ 12.2 V | 5.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±2% | 1.2 V @ 200 mA | |
|
Microsemi Corporation
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500 nA @ 12.2 V | 5.5 Ω | Through Hole | -65°C ~ 150°C | 3 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
NXP Semiconductors
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200 nA @ 7 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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100 nA @ 8 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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100 nA @ 8 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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100 nA @ 8 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 10.5 V | 15 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 11.2 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 12.6 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
|
NXP Semiconductors
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50 nA @ 14 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 15.4 V | 25 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 16.8 V | 30 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 18.9 V | 40 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 µA @ 1 V | 100 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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500 nA @ 6 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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100 nA @ 8 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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100 nA @ 8 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
|
NXP Semiconductors
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50 nA @ 10.5 V | 15 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
|
NXP Semiconductors
|
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50 nA @ 10.5 V | 15 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
|
NXP Semiconductors
|
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50 nA @ 11.2 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
|
NXP Semiconductors
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50 nA @ 14 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 15.4 V | 25 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 16.8 V | 30 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 18.9 V | 40 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
|
NXP Semiconductors
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50 nA @ 18.9 V | 40 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
|
NXP Semiconductors
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50 µA @ 1 V | 100 Ω | Surface Mount | -65°C ~ 150°C | 400 mW | SOD-110 | ±5% | 1.1 V @ 100 mA | |
NXP Semiconductors
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70 nA @ 12 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SMT3; MPAK | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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70 nA @ 13 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SMT3; MPAK | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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70 nA @ 13 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SMT3; MPAK | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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70 nA @ 13 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SMT3; MPAK | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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70 nA @ 13 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SMT3; MPAK | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 µA @ 1 V | 100 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SMT3; MPAK | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 µA @ 1 V | 100 Ω | Surface Mount | - | 220 mW | SMT3; MPAK | ±6% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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20 µA @ 1 V | 100 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SMT3; MPAK | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
|
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20 µA @ 1 V | 100 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SMT3; MPAK | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
|
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20 µA @ 1 V | 100 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SMT3; MPAK | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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20 µA @ 1 V | 100 Ω | Surface Mount | - | 220 mW | SMT3; MPAK | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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70 nA @ 15 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SMT3; MPAK | ±5% | 1.1 V @ 100 mA |
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