What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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ROHM Semiconductor
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100 nA @ 7 V | 30 Ω | Surface Mount | 150°C | 100 mW | VMN2M | - | 10 V | |
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ROHM Semiconductor
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120 µA @ 500 mV | 100 Ω | Surface Mount | 150°C | 100 mW | VMN2M | - | 2 V | |
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ROHM Semiconductor
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50 µA @ 1 V | 120 Ω | Surface Mount | 150°C | 100 mW | VMN2M | - | 3 V | |
Microchip Technology
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- | - | - | - | - | - | - | - | |
Vishay Dale
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3 µA @ 2 V | 80 Ω | Surface Mount | -55°C ~ 150°C | 300 mW | SOT-23-3 | ±6% | 4.7 V | |
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Vishay Dale
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50 nA @ 11.2 V | 40 Ω | Surface Mount | -55°C ~ 150°C | 300 mW | SOT-23-3 | ±5% | 16 V | |
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Taiwan Semiconductor
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100 nA @ 2 V | 10 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Micro Commercial Co.
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Taiwan Semiconductor
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100 nA @ 18 V | 80 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 6 V | 7 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 29 V | 90 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 3 V | 8 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 500 mW | 1206 | ±2% | 1.5 V @ 10 mA | |
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Taiwan Semiconductor
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10 µA @ 1 V | 95 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 16 V | 55 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 500 mW | 1206 | ±2% | 1.5 V @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 22 V | 80 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 500 mW | 1206 | ±2% | 1.5 V @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 8.2 V | 20 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 500 mW | 1206 | ±2% | 1.5 V @ 10 mA | |
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Taiwan Semiconductor
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2 µA @ 1 V | 85 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 500 mW | 1206 | ±2% | 1.5 V @ 10 mA | |
On Semiconductor
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100 nA @ 22 V | 80 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.3% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 38 V | 170 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.3% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 22 V | 80 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±5% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 18.9 V | 70 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.29% | 900 mV @ 10 mA | |
On Semiconductor
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10 nA @ 21.2 V | - | Surface Mount | -55°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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On Semiconductor
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10 nA @ 21.2 V | - | Surface Mount | -55°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 18.9 V | 70 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.29% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 18.9 V | 70 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±5% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 26 V | 95 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.3% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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1 µA @ 6.2 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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1 µA @ 7.6 V | 200 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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10 µA @ 5 V | 1200 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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50 nA @ 9.1 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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500 nA @ 15.2 V | 3 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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10 nA @ 20.4 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Microchip Technology
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5 µA @ 12.2 V | 3.5 Ω | Through Hole | -65°C ~ 175°C | 5 W | - | ±5% | 1.5 V @ 1 A | |
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Central Semiconductor Corp
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7.5 µA @ 1.5 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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7.5 µA @ 1.5 V | 1650 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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7.5 µA @ 1 V | 1200 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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50 nA @ 9.1 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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10 µA @ 3 V | 1500 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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10 nA @ 18.3 V | 150 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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50 nA @ 9.8 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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1 µA @ 6.9 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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2 µA @ 1 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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10 nA @ 15.2 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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5 µA @ 8.4 V | 2.5 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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10 µA @ 3 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
Microchip Technology
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2 µA @ 152 V | 500 Ω | Through Hole | -65°C ~ 175°C | 5 W | - | ±5% | 1.5 V @ 1 A | |
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Central Semiconductor Corp
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2 µA @ 9.1 V | 2.5 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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50 nA @ 13.6 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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50 nA @ 12.9 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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7.5 µA @ 6.9 V | 2 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-201 | ±5% | 1.2 V @ 1 A |
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