What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Nexperia USA Inc.
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0.9 nA @ 2.95 V | 100 Ω | Surface Mount | 150°C (TJ) | 250 mW | TO-236AB | ±3.39% | 900 mV @ 10 mA | |
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Micro Commercial Co.
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500 nA @ 20.5 V | 15 Ω | Surface Mount | -65°C ~ 150°C | 1 W | DO-214AC (SMAJ) | ±5% | 1.2 V @ 200 mA | |
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Renesas
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Micro Commercial Co.
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1 µA @ 18 V | 15 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123FL | ±5% | 1.2 V @ 200 mA | |
Central Semiconductor Corp
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10 µA @ 4 V | 3.5 Ω | Surface Mount | -65°C ~ 200°C | 1 W | MELF | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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10 µA @ 6 V | 4.5 Ω | Surface Mount | -65°C ~ 200°C | 1 W | MELF | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 9.1 V | 9 Ω | Surface Mount | -65°C ~ 200°C | 1 W | MELF | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 9.9 V | 10 Ω | Surface Mount | -65°C ~ 200°C | 1 W | MELF | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 15.2 V | 22 Ω | Surface Mount | -65°C ~ 200°C | 1 W | MELF | ±5% | 1.2 V @ 200 mA | |
On Semiconductor
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100 nA @ 8 V | 30 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.27% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 9 V | 30 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.33% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 16.8 V | 55 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.32% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 14 V | 50 Ω | Surface Mount, Wettable Flank | -65°C ~ 150°C (TJ) | 250 mW | 2-X2DFNW (1x0.6) | ±2.28% | 900 mV @ 10 mA | |
PANJIT
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1 µA @ 36 V | 45 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123FL | ±5% | 47 V | |
PANJIT
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8 µA @ 2 V | 3 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 6 V | |
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PANJIT
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1 µA @ 51 V | 80 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 68 V | |
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PANJIT
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1 µA @ 16 V | 15 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 22 V | |
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PANJIT
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5 µA @ 1 V | 6 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123FL | ±5% | 5.1 V | |
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PANJIT
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1 µA @ 51 V | 80 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123FL | ±5% | 68 V | |
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PANJIT
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1 µA @ 36 V | 45 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 47 V | |
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PANJIT
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10 µA @ 5 V | 4 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 9.1 V | |
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PANJIT
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1 µA @ 21 V | 15 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 28 V | |
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PANJIT
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1 µA @ 47 V | 80 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 62 V | |
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10 µA @ 2 V | 4 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 5.6 V | |
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7 µA @ 7.5 V | 4 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 10 V | |
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3 µA @ 9.1 V | 7 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 12 V | |
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PANJIT
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10 µA @ 3 V | 3 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123FL | ±5% | 6.8 V | |
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PANJIT
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10 µA @ 3 V | 3 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 6.8 V | |
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PANJIT
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1 µA @ 14 V | 15 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123FL | ±5% | 19 V | |
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PANJIT
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1 µA @ 22 V | 15 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123FL | ±5% | 30 V | |
Vishay Dale
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100 nA @ 12 V | 13 Ω | Surface Mount | -65°C ~ 150°C | 410 mW | SOD-123 | ±2% | 16 V | |
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PANJIT
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1 µA @ 27 V | 40 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 1 W | SOD-123HE | ±5% | 36 V | |
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Vishay Dale
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100 nA @ 14 V | 18 Ω | Surface Mount | -65°C ~ 150°C | 410 mW | SOD-123 | ±2% | 18 V | |
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Vishay Dale
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100 nA @ 15 V | 50 Ω | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-123 | ±5% | 20 V | |
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Vishay Dale
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100 nA @ 17 V | 25 Ω | Surface Mount | -55°C ~ 150°C | 410 mW | SOD-123 | ±2% | 22 V | |
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Vishay Dale
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100 nA @ 18 V | 28 Ω | Surface Mount | -55°C ~ 150°C | 410 mW | SOD-123 | ±2% | 24 V | |
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Vishay Dale
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100 nA @ 20 V | 30 Ω | Surface Mount | -55°C ~ 150°C | 410 mW | SOD-123 | ±2% | 27 V | |
On Semiconductor
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100 nA @ 84 V | 650 Ω | Through Hole | - | 500 mW | - | - | 1.1 V @ 200 mA | |
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Microchip Technology
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50 nA @ 11.4 V | 100 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-7 | ±1% | 1.1 V @ 200 mA | |
Microchip Technology
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50 nA @ 11.4 V | 100 Ω | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±2% | 1.1 V @ 200 mA | |
Microchip Technology
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10 nA @ 12.6 V | 100 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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1 µA @ 11.4 V | 9 Ω | Through Hole | -65°C ~ 175°C (TJ) | 1.25 W | DO-41 | ±1% | 1.2 V @ 200 mA | |
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Microchip Technology
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10 nA @ 29.7 V | 100 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
Microchip Technology
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1 µA @ 6.2 V | 30 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 nA @ 19.8 V | 100 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 nA @ 12.6 V | 100 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
Microchip Technology
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2 µA @ 2.5 V | 26 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-7 (DO-204AA) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 nA @ 25.2 V | 100 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 nA @ 16.2 V | 100 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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