What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Diotec Semiconductor
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500 nA @ 122 V | 350 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 160 V | |
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Diotec Semiconductor
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500 nA @ 152 V | 480 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 200 V | |
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Diotec Semiconductor
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500 nA @ 19 V | 4 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 25 V | |
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Diotec Semiconductor
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500 nA @ 129 V | 380 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 170 V | |
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Diotec Semiconductor
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500 nA @ 21.2 V | 6 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 28 V | |
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Diotec Semiconductor
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500 nA @ 22.8 V | 8 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 30 V | |
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Diotec Semiconductor
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500 nA @ 27.4 V | 11 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 36 V | |
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Diotec Semiconductor
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500 nA @ 38.8 V | 27 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 51 V | |
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Diotec Semiconductor
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500 nA @ 32.7 V | 20 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 43 V | |
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Diotec Semiconductor
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500 nA @ 35.8 V | 25 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 47 V | |
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Diotec Semiconductor
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500 nA @ 45.5 V | 40 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 60 V | |
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Diotec Semiconductor
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5 µA @ 8.4 V | 2.5 Ω | Through Hole | -50°C ~ 150°C (TJ) | 5 W | DO-201 | ±5% | 11 V | |
EIC SEMICONDUCTOR INC.
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500 nA @ 19.4 V | 5 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±10% | 1.2 V @ 1 A | |
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EIC SEMICONDUCTOR INC.
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25 µA @ 1 V | 7.5 Ω | Through Hole | -65°C ~ 175°C (TJ) | 1.5 W | DO-41 | ±5% | 3.9 V | |
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Renesas
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20 µA @ 1 V | 80 Ω | Surface Mount | 150°C (TJ) | 1 W | - | ±5.32% | 4.7 V | |
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Diotec Semiconductor
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5 µA @ 1 V | 95 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 300 mW | SOD-323 | ±5% | 3.1 V | |
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- | - | Surface Mount | - | - | SOT-89 | - | - | |
Diotec Semiconductor
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100 nA @ 11 V | 40 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 500 mW | SOD-123F | ±5% | 15 V | |
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20 µA @ 5 V | 15 Ω | Surface Mount | 150°C (TJ) | 1 W | - | ±6.1% | 8.2 V | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 65.5 V | 75 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±10% | 1.2 V @ 1 A | |
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10 µA @ 23 V | 80 Ω | Surface Mount | 150°C (TJ) | 1 W | - | ±6.67% | 30 V | |
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Renesas
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10 µA @ 23 V | 80 Ω | Surface Mount | 150°C (TJ) | 1 W | - | ±6.67% | 30 V | |
Diotec Semiconductor
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50 nA @ 27.3 V | 130 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 300 mW | SOT-23-3 (TO-236) | ±5% | 39 V | |
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Diotec Semiconductor
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100 nA @ 8 V | 30 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 500 mW | SOD-123F | ±5% | 11 V | |
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EIC SEMICONDUCTOR INC.
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2 µA @ 9.1 V | 2.5 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 9.9 V | 2.5 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
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Diotec Semiconductor
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5 µA @ 1 V | 95 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 300 mW | SOD-323 | ±2% | 3.23 V | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 15.2 V | 3 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 16.7 V | 3.5 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 69.2 V | 75 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 20.6 V | 5 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 91.2 V | 170 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 98.8 V | 190 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 12.9 V | 2.5 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
NXP Semiconductors
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1 µA @ 2 V | 40 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±5% | 900 mV @ 10 mA | |
NXP Semiconductors
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NXP Semiconductors
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3 µA @ 2 V | 80 Ω | Surface Mount | -65°C ~ 150°C | 1 W | SOT-89 | ±5% | 1 V @ 50 mA | |
NXP Semiconductors
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1 µA @ 2 V | 40 Ω | Surface Mount | -55°C ~ 150°C (TA) | 590 mW | SOD-123 | ±1.96% | 900 mV @ 10 mA | |
Nexperia USA Inc.
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Nexperia USA Inc.
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Nexperia USA Inc.
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- | - | Surface Mount | -55°C ~ 150°C | - | SOD-123 | - | - | |
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Nexperia USA Inc.
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Nexperia USA Inc.
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Nexperia USA Inc.
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NXP Semiconductors
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50 nA @ 30.1 V | 150 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±2% | 900 mV @ 10 mA |
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