What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Incorporated
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100 nA @ 8.4 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SOT-23-3 | ±3% | 900 mV @ 10 mA | |
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Diodes Incorporated
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100 nA @ 9.1 V | 12 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SOT-23-3 | ±3% | 900 mV @ 10 mA | |
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Diodes Incorporated
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50 nA @ 33 V | 90 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SOT-23-3 | ±2% | 900 mV @ 10 mA | |
Microchip Technology
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50 nA @ 9.87 V | 200 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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5 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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5 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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5 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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5 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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5 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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5 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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4 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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4 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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4 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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4 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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4 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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4 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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4 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
ROHM Semiconductor
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200 nA @ 17 V | 30 Ω | Through Hole | - | 500 mW | MSD | ±3% | 22 V | |
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Microsemi Corporation
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4 µA @ 2 V | 1650 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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10 µA @ 3 V | 1600 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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10 µA @ 3 V | 1600 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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10 µA @ 3 V | 1600 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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10 µA @ 3 V | 1600 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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10 µA @ 3 V | 1600 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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10 µA @ 3 V | 1600 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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10 µA @ 3 V | 1600 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microsemi Corporation
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10 µA @ 3 V | 1600 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 µA @ 3 V | 1500 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 µA @ 3 V | 1500 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 µA @ 4 V | 1400 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-216 | ±2% | 1.1 V @ 200 mA | |
Microchip Technology
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- | 240 Ω | Through Hole | - | 250 mW | DO-35 | ±10% | 75 V | |
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On Semiconductor
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7.5 µA @ 1.5 V | - | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Panasonic Electronic Components
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2 µA @ 1 V | 80 Ω | Surface Mount | - | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 mA | |
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Panasonic Electronic Components
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10 µA @ 1 V | 130 Ω | Surface Mount | - | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 mA | |
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Panasonic Electronic Components
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50 nA @ 17 V | 80 Ω | Surface Mount | - | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 mA | |
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Panasonic Electronic Components
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120 µA @ 1 V | 100 Ω | Surface Mount | - | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 mA | |
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Panasonic Electronic Components
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120 µA @ 1 V | 110 Ω | Surface Mount | -40°C ~ 85°C | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 mA | |
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Panasonic Electronic Components
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50 µA @ 1 V | 120 Ω | Surface Mount | - | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 mA | |
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Panasonic Electronic Components
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20 µA @ 1 V | 130 Ω | Surface Mount | - | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 mA | |
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Panasonic Electronic Components
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10 µA @ 1 V | 130 Ω | Surface Mount | - | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 mA | |
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Panasonic Electronic Components
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10 µA @ 1 V | 130 Ω | Surface Mount | -40°C ~ 85°C | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 mA | |
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Panasonic Electronic Components
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50 nA @ 10 V | 35 Ω | Surface Mount | - | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 A | |
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Panasonic Electronic Components
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50 nA @ 11 V | 40 Ω | Surface Mount | - | 120 mW | SSSMini2-F4-B | ±5% | 1 V @ 10 mA | |
Microchip Technology
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2 µA @ 3 V | 25 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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1 µA @ 5.2 V | 8 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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100 nA @ 17 V | 55 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
Microchip Technology
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5 µA @ 22.8 V | 49 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-7 | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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5 µA @ 25.1 V | 58 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-7 | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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150 µA @ 4.5 V | 0.2 Ω | Through Hole | -65°C ~ 175°C | 50 W | TO-204AD (TO-3) | ±10% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 9.1 V | 1 Ω | Through Hole | -65°C ~ 175°C | 50 W | TO-204AD (TO-3) | ±5% | 1.5 V @ 10 A |
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