What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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NXP Semiconductors
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10 µA @ 2.5 V | 40 Ω | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-323F | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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10 µA @ 2.5 V | 40 Ω | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-323F | ±2% | 1.1 V @ 100 mA | |
NXP Semiconductors
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50 nA @ 19 V | 40 Ω | Through Hole | 200°C | 1 W | DO-41 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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3 µA @ 2 V | 10 Ω | Through Hole | 200°C | 1 W | DO-41 | ±5% | 1 V @ 50 mA | |
NXP Semiconductors
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5 µA @ 1 V | 90 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SOD-523 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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10 µA @ 2.5 V | 40 Ω | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-323F | ±1.96% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 15 V | 20 Ω | Surface Mount | 150°C (TJ) | 310 mW | SOD-323F | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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2 µA @ 1 V | 80 Ω | Surface Mount | 150°C (TJ) | 310 mW | SOD-323F | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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10 µA @ 1 V | 95 Ω | Surface Mount | 150°C (TJ) | 310 mW | SOD-323F | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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500 nA @ 3 V | 30 Ω | Surface Mount | 150°C (TJ) | 310 mW | SOD-323F | ±5% | 1.1 V @ 100 mA | |
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Renesas
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20 µA @ 1 V | 130 Ω | Surface Mount | 150°C (TJ) | 200 mW | 2-URP | ±3.7% | 3.38 V | |
Diotec Semiconductor
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100 nA @ 17 V | 55 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 500 mW | SOD-123F | ±5% | 22 V | |
Diotec Semiconductor
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5 µA @ 1 V | 130 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 500 mW | SOD-123F | ±5% | 3.9 V | |
Diotec Semiconductor
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- | - | Surface Mount | -55°C ~ 150°C (TJ) | 200 mW | SOD-323 | ±10% | 18 V | |
Diotec Semiconductor
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- | 0 Ω | Surface Mount | - | 200 mW | SOD-323 | ±5% | 27 V | |
Diotec Semiconductor
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- | 40 Ω | Surface Mount | - | 300 mW | SOD-323F | ±2% | 15 V | |
Good-Ark Semiconductor
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5 µA @ 13.7 V | 20 Ω | Surface Mount | 150°C (TJ) | 1 W | DO-214AC (SMA) | ±5% | 18 V | |
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Good-Ark Semiconductor
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Good-Ark Semiconductor
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10 µA @ 7 V | 5 Ω | Surface Mount | 150°C (TJ) | 1 W | DO-214AC (SMA) | ±5% | 9.1 V | |
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Good-Ark Semiconductor
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5 µA @ 11.4 V | 14 Ω | Surface Mount | 150°C (TJ) | 1 W | DO-214AC (SMA) | ±5% | 15 V | |
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Good-Ark Semiconductor
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10 µA @ 6 V | 4.5 Ω | Surface Mount | 150°C (TJ) | 1 W | DO-214AC (SMA) | ±5% | 8.2 V | |
EIC SEMICONDUCTOR INC.
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100 nA @ 21 V | 44 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 9.9 V | 13 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 13 V | 19 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
Micro Commercial Co.
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500 nA @ 69.2 V | 75 Ω | Surface Mount | -55°C ~ 150°C | 5 W | DO-214AA (SMB) | ±5% | 1.2 V @ 1 A | |
SMC Diode Solutions
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3 µA @ 8 V | 17 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 500 mW | 2-WLCSP (1x0.6) | ±5% | 900 mV @ 10 mA | |
ROHM Semiconductor
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10 µA @ 17 V | 14 Ω | Surface Mount | 150°C (TJ) | 1 W | PMDS | ±5.38% | 23.25 V | |
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ROHM Semiconductor
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10 µA @ 12 V | 12 Ω | Surface Mount | 150°C (TJ) | 1 W | PMDS | ±6.09% | 17.25 V | |
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ROHM Semiconductor
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10 µA @ 10 V | 10 Ω | Surface Mount | 150°C (TJ) | 1 W | PMDS | ±6.01% | 14.15 V | |
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ROHM Semiconductor
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20 µA @ 6 V | 6 Ω | Surface Mount | 150°C (TJ) | 1 W | PMDS | ±5.7% | 9.65 V | |
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ROHM Semiconductor
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10 µA @ 15 V | 14 Ω | Surface Mount | 150°C (TJ) | 1 W | PMDS | ±5.66% | 21.2 V | |
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ROHM Semiconductor
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10 µA @ 21 V | 16 Ω | Surface Mount | 150°C | 1 W | PMDS | ±5.26% | 28.5 V | |
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ROHM Semiconductor
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200 µA @ 500 mV | 25 Ω | Surface Mount | 150°C (TJ) | 1 W | PMDS | ±5.66% | 2.12 V | |
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ROHM Semiconductor
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20 µA @ 4 V | 4 Ω | Surface Mount | 150°C (TJ) | 1 W | PMDS | ±6% | 7.95 V | |
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ROHM Semiconductor
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100 µA @ 1 V | 15 Ω | Surface Mount | 150°C (TJ) | 1 W | PMDS | ±6.25% | 3.2 V | |
Renesas
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Central Semiconductor Corp
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10 nA @ 18.3 V | 150 Ω | Surface Mount | -65°C ~ 200°C (TJ) | 500 mW | SOD-80 | ±5% | 1 V @ 200 mA | |
Taiwan Semiconductor
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1 µA @ 38.8 V | 70 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 3 W | DO-214AA (SMB) | ±5% | 51 V | |
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Taiwan Semiconductor
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1 µA @ 8.4 V | 5.5 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 3 W | DO-214AA (SMB) | ±5% | 11 V | |
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Taiwan Semiconductor
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1 µA @ 12.2 V | 10 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 3 W | DO-214AA (SMB) | ±5% | 16 V | |
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Taiwan Semiconductor
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1 µA @ 9.1 V | 6.5 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 3 W | DO-214AA (SMB) | ±5% | 12 V | |
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Taiwan Semiconductor
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1 µA @ 16.7 V | 17.5 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 3 W | DO-214AA (SMB) | ±5% | 22 V | |
Vishay Dale
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1 µA @ 33 V | 45 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.98% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 20 V | 15 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±7.04% | 1.2 V @ 500 mA | |
On Semiconductor
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500 nA @ 8.4 V | 5.5 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | SMA | - | 1.5 V @ 200 mA | |
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Vishay Dale
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1 µA @ 36 V | 45 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.38% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 33 V | 45 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.98% | 1.2 V @ 500 mA | |
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EIC SEMICONDUCTOR INC.
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10 µA @ 1 V | 9 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 µA @ 1 V | 10 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 47.1 V | 125 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA |
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