What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 19 V | 35 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
EIC SEMICONDUCTOR INC.
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5 µA @ 11.4 V | 14 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±10% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 18.2 V | 25 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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On Semiconductor
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EIC SEMICONDUCTOR INC.
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10 µA @ 1 V | 9 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 µA @ 1 V | 10 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 47.1 V | 125 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 51.7 V | 150 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 56 V | 175 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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10 µA @ 4 V | 3.5 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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10 µA @ 6 V | 4.5 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±10% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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10 µA @ 6 V | 4.5 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 9.9 V | 10 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±10% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 15.2 V | 14 Ω | Through Hole | -65°C ~ 175°C (TJ) | 1.5 W | DO-41 | ±5% | 20 V | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 6.5 V | 3.5 Ω | Through Hole | -65°C ~ 175°C (TJ) | 1.5 W | DO-41 | ±5% | 8.2 V | |
Rectron Semiconductor
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1 µA @ 7.6 V | - | Surface Mount | - | 300 mW | SOD-523 | ±5% | 900 mV @ 10 mA | |
Renesas
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Nexperia USA Inc.
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NXP Semiconductors
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1 µA @ 5.3 V | 100 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | TO-236AB | ±3% | 900 mV @ 10 mA | |
Renesas
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On Semiconductor
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On Semiconductor
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On Semiconductor
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On Semiconductor
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5 µA @ 1 V | 90 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 9.1 V | 9 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
On Semiconductor
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1 µA @ 21 V | 15 Ω | Surface Mount | 150°C (TJ) | 1 W | SOD-123F | ±5% | 1.2 V @ 200 mA | |
Nexperia USA Inc.
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EIC SEMICONDUCTOR INC.
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5 µA @ 42.6 V | 110 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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10 µA @ 1 V | 8 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 27.4 V | 50 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 8.4 V | 8 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±10% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 8.4 V | 8 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 16.7 V | 23 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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Micro Commercial Co.
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NXP Semiconductors
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50 nA @ 50 V | 80 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 250 mW | SOT-23 | ±2% | 900 mV @ 10 mA | |
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NXP Semiconductors
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Rectron Semiconductor
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2 µA @ 2 V | 60 Ω | Surface Mount | - | 500 mW | SOD-323 | ±2% | 900 mV @ 10 mA | |
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Renesas
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Renesas
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Renesas
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Renesas
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Renesas
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Renesas
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Renesas
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Renesas
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Renesas
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Renesas
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Renesas
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MDD
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2 µA @ 1.5 V | 130 Ω | Surface Mount | -55°C ~ 150°C | 200 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
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MDD
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100 nA @ 11 V | 40 Ω | Surface Mount | -55°C ~ 150°C | 200 mW | SOD-323 | ±5% | 900 mV @ 10 mA |
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