What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Micro Commercial Co.
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1 µA @ 9.9 V | 2.5 Ω | Surface Mount | -55°C ~ 150°C | 5 W | DO-214AA (SMB) | ±5% | 1.2 V @ 1 A | |
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Micro Commercial Co.
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500 nA @ 35.8 V | 25 Ω | Surface Mount | -55°C ~ 150°C | 5 W | DO-214AA (SMB) | ±5% | 1.2 V @ 1 A | |
On Semiconductor
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1 µA @ 27.4 V | 38 Ω | Through Hole | -65°C ~ 200°C | 3 W | Axial | ±5% | 1.5 V @ 200 mA | |
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Micro Commercial Co.
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500 nA @ 15.2 V | 3 Ω | Surface Mount | -55°C ~ 150°C | 5 W | DO-214AA (SMB) | ±5% | 1.2 V @ 1 A | |
Diodes Incorporated
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1 µA @ 15 V | 15 Ω | Surface Mount | -55°C ~ 150°C | 1 W | PowerDI™ 123 | ±6% | 1.2 V @ 200 mA | |
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Diodes Incorporated
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1 µA @ 24 V | 15 Ω | Surface Mount | -55°C ~ 150°C | 1 W | PowerDI™ 123 | ±6% | 1.2 V @ 200 mA | |
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Diodes Incorporated
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1 µA @ 20 V | 15 Ω | Surface Mount | -55°C ~ 150°C | 1 W | PowerDI™ 123 | ±7% | 1.2 V @ 200 mA | |
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Diodes Incorporated
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1 µA @ 27 V | 40 Ω | Surface Mount | -55°C ~ 150°C | 1 W | PowerDI™ 123 | ±5% | 1.2 V @ 200 mA | |
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Diodes Incorporated
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5 µA @ 7.5 V | 4 Ω | Surface Mount | -55°C ~ 150°C | 1 W | PowerDI™ 123 | ±6% | 1.2 V @ 200 mA | |
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Micro Commercial Co.
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500 nA @ 12.9 V | 2.5 Ω | Surface Mount | -55°C ~ 150°C | 5 W | DO-214AA (SMB) | ±5% | 1.2 V @ 1 A | |
On Semiconductor
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10 µA @ 6.6 V | 2 Ω | Through Hole | -65°C ~ 200°C | 5 W | Axial | ±5% | 1.2 V @ 1 A | |
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On Semiconductor
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500 nA @ 144 V | 450 Ω | Through Hole | -65°C ~ 200°C | 5 W | Axial | ±5% | 1.2 V @ 1 A | |
Comchip Technology
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10 µA @ 1 V | 7 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-214AC (SMA) | ±5% | 1.2 V @ 200 mA | |
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Comchip Technology
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100 µA @ 1 V | 10 Ω | Surface Mount | -55°C ~ 150°C | 1 W | DO-214AC (SMA) | ±5% | 1.2 V @ 200 mA | |
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On Semiconductor
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5 µA @ 8.4 V | 2.5 Ω | Through Hole | -65°C ~ 200°C | 5 W | Axial | ±5% | 1.2 V @ 1 A | |
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On Semiconductor
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500 nA @ 69.2 V | 75 Ω | Through Hole | -65°C ~ 200°C | 5 W | Axial | ±5% | 1.2 V @ 1 A | |
Taiwan Semiconductor
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1 µA @ 22 V | 15 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | SOD-123W | ±5% | 1 V @ 200 mA | |
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Taiwan Semiconductor
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2 µA @ 10 V | 10 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | SOD-123W | ±5% | 1 V @ 200 mA | |
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On Semiconductor
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500 nA @ 98.8 V | 190 Ω | Through Hole | -65°C ~ 200°C | 5 W | Axial | ±5% | 1.2 V @ 1 A | |
Central Semiconductor Corp
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10 µA @ 3 V | 1500 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | SOD-123 | ±5% | 1.5 V @ 100 mA | |
Nexperia USA Inc.
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30 nA @ 200 V | 4 Ω | Surface Mount | 175°C (TJ) | 750 mW | SOD-128/CFP5 | - | 880 mV @ 3 A | |
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Taiwan Semiconductor
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1 µA @ 13 V | 15 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1 W | SOD-123W | ±5% | 1 V @ 200 mA | |
ROHM Semiconductor
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10 µA @ 27 V | 20 Ω | Surface Mount | 150°C (TJ) | 1 W | PMDS | ±5.56% | 36 V | |
Vishay Dale
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5 µA @ 35.8 V | 80 Ω | Surface Mount | 150°C | 1 W | DO-214AC (SMA) | ±5% | 47 V | |
Comchip Technology
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500 nA @ 13.7 V | 2.5 Ω | Surface Mount | -55°C ~ 150°C | 5 W | DO-214AA (SMB) | ±5% | 1.2 V @ 200 mA | |
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Comchip Technology
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500 nA @ 16.7 V | 3.5 Ω | Surface Mount | -55°C ~ 150°C | 5 W | DO-214AA (SMB) | ±5% | 1.2 V @ 200 mA | |
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Comchip Technology
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500 nA @ 62.2 V | 65 Ω | Surface Mount | -55°C ~ 150°C | 5 W | DO-214AA (SMB) | ±5% | 1.2 V @ 200 mA | |
Nexperia USA Inc.
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1 µA @ 2 V | 40 Ω | Surface Mount | -65°C ~ 150°C | 1 W | SOT-89 | ±5% | 1 V @ 50 mA | |
Vishay Dale
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1 µA @ 36 V | 45 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.38% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 200 V | 1000 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±7.04% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 130 V | 400 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.39% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 160 V | 750 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±5.68% | 1.2 V @ 500 mA | |
Central Semiconductor Corp
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1 µA @ 1.5 V | 1500 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | SOD-523 | ±5% | 900 mV @ 10 mA | |
Central Semiconductor Corp
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100 nA @ 15 V | 25 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
Micro Commercial Co.
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1 µA @ 1 V | 1.5 Ω | Through Hole | -55°C ~ 150°C | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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2 µA @ 8.4 V | 22 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 14 V | 21 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
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Vishay Dale
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1 µA @ 11 V | 10 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6% | 1.2 V @ 500 mA | |
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Vishay Dale
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3 µA @ 9.1 V | 7 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±5.42% | 1.2 V @ 500 mA | |
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Central Semiconductor Corp
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2 µA @ 1 V | 19 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 200 mA | |
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Central Semiconductor Corp
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10 µA @ 1 V | 28 Ω | Through Hole | -65°C ~ 200°C | 500 mW | DO-35 | ±5% | 1.5 V @ 200 mA | |
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Central Semiconductor Corp
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100 µA @ 5.7 V | 1.5 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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2 µA @ 9.1 V | 2.5 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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500 nA @ 18.2 V | 3.5 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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10 µA @ 1 V | 1.5 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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5 µA @ 7.6 V | 1 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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500 nA @ 16.7 V | 3.5 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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ROHM Semiconductor
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20 µA @ 6 V | - | Surface Mount | 150°C (TJ) | 1 W | PMDU | ±6.04% | 9.1 V | |
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Central Semiconductor Corp
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100 µA @ 5.2 V | 1 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
Vishay Dale
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100 nA @ 5 V | 7 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±2% | 1.5 V @ 200 mA |
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