What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Taiwan Semiconductor
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900 nA @ 5 V | 15 Ω | Surface Mount | 150°C (TJ) | 200 mW | SOD-523F | ±2% | 7.5 V | |
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Taiwan Semiconductor
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630 nA @ 5 V | 15 Ω | Surface Mount | 150°C (TJ) | 200 mW | SOD-523F | ±2% | 8.2 V | |
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Taiwan Semiconductor
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450 nA @ 6 V | 15 Ω | Surface Mount | 150°C (TJ) | 200 mW | SOD-523F | ±2% | 9.1 V | |
Taiwan Semiconductor
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100 nA @ 7.5 V | 15 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 8.5 V | 20 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 9 V | 20 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 10 V | 25 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 11 V | 30 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 12 V | 40 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 14 V | 50 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 15 V | 50 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 17 V | 55 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 18 V | 80 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 20 V | 80 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 µA @ 1 V | 85 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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75 µA @ 1 V | 83 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 23 V | 80 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 25 V | 80 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 27 V | 90 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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100 nA @ 29 V | 90 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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50 µA @ 1 V | 95 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
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Taiwan Semiconductor
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25 µA @ 1 V | 95 Ω | Surface Mount | -55°C ~ 125°C (TJ) | 200 mW | 1005 | ±5% | 900 mV @ 10 mA | |
Taiwan Semiconductor
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5 µA @ 11.4 V | 14 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 11 V | |
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Taiwan Semiconductor
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5 µA @ 13.7 V | 20 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 11 V | |
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Taiwan Semiconductor
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5 µA @ 16.7 V | 23 Ω | Through Hole | -65°C ~ 200°C (TA) | 1 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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5 µA @ 22.8 V | 40 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 12 V | |
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Taiwan Semiconductor
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5 µA @ 27.4 V | 50 Ω | Through Hole | -65°C ~ 200°C (TA) | 1 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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5 µA @ 29.7 V | 60 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 13 V | |
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Taiwan Semiconductor
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5 µA @ 35.8 V | 80 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 13 V | |
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Taiwan Semiconductor
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5 µA @ 42.6 V | 110 Ω | Through Hole | -65°C ~ 200°C (TA) | 1 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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5 µA @ 11.4 V | 14 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 15 V | |
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Taiwan Semiconductor
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5 µA @ 11.4 V | 14 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 15 V | |
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Taiwan Semiconductor
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5 µA @ 11.4 V | 14 Ω | Through Hole | -65°C ~ 200°C (TA) | 1 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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5 µA @ 12.2 V | 16 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 16 V | |
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Taiwan Semiconductor
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5 µA @ 12.2 V | 22 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 16 V | |
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Semtech
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50 nA @ 28.8 V | 27 Ω | Through Hole | -55°C ~ 175°C | 1.5 W | Axial | ±5% | 36 V | |
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Taiwan Semiconductor
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5 µA @ 12.2 V | 16 Ω | Through Hole | -65°C ~ 200°C (TA) | 1 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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5 µA @ 13.7 V | 35 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 18 V | |
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Taiwan Semiconductor
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5 µA @ 13.7 V | 45 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 18 V | |
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Taiwan Semiconductor
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5 µA @ 13.7 V | 20 Ω | Through Hole | -65°C ~ 200°C (TA) | 1 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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5 µA @ 15.2 V | 60 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 20 V | |
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Taiwan Semiconductor
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5 µA @ 15.2 V | 80 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 20 V | |
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Taiwan Semiconductor
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5 µA @ 15.2 V | 22 Ω | Through Hole | -65°C ~ 200°C (TA) | 1 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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5 µA @ 16.7 V | 23 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 22 V | |
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Taiwan Semiconductor
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5 µA @ 16.7 V | 23 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 22 V | |
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Taiwan Semiconductor
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5 µA @ 16.7 V | 23 Ω | Through Hole | -65°C ~ 200°C (TA) | 1 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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5 µA @ 18.2 V | 25 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 24 V | |
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Taiwan Semiconductor
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5 µA @ 18.2 V | 25 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-204AL (DO-41) | ±5% | 24 V | |
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Taiwan Semiconductor
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5 µA @ 18.2 V | 25 Ω | Through Hole | -65°C ~ 200°C (TA) | 1 W | DO-204AL (DO-41) | ±5% | 1.2 V @ 200 mA | |
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Diodes Incorporated
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