What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Dale
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5 µA @ 32.7 V | 70 Ω | Surface Mount | 150°C | 1 W | DO-214AC (SMA) | ±10% | 43 V | |
Microchip Technology
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10 nA @ 25 V | - | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 1.5 V @ 100 mA | |
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Vishay Dale
|
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5 µA @ 35.8 V | 80 Ω | Surface Mount | 150°C | 1 W | DO-214AC (SMA) | ±10% | 47 V | |
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Vishay Dale
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5 µA @ 38.8 V | 95 Ω | Surface Mount | 150°C | 1 W | DO-214AC (SMA) | ±10% | 51 V | |
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Vishay Dale
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5 µA @ 42.6 V | 110 Ω | Surface Mount | -65°C ~ 150°C | 1 W | DO-214AC (SMA) | ±10% | 56 V | |
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Vishay Dale
|
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5 µA @ 47.1 V | 125 Ω | Surface Mount | -65°C ~ 150°C | 1 W | DO-214AC (SMA) | ±5% | 62 V | |
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Vishay Dale
|
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5 µA @ 51.7 V | 150 Ω | Surface Mount | -65°C ~ 150°C | 1 W | DO-214AC (SMA) | ±5% | 68 V | |
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Vishay Dale
|
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5 µA @ 56 V | 175 Ω | Surface Mount | -65°C ~ 150°C | 1 W | DO-214AC (SMA) | ±10% | 75 V | |
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Vishay Dale
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5 µA @ 62.2 V | 200 Ω | Surface Mount | -65°C ~ 150°C | 1 W | DO-214AC (SMA) | ±10% | 82 V | |
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Vishay Dale
|
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5 µA @ 69.2 V | 250 Ω | Surface Mount | -65°C ~ 150°C | 1 W | DO-214AC (SMA) | ±10% | 91 V | |
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Vishay Dale
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5 µA @ 76 V | 350 Ω | Surface Mount | -65°C ~ 150°C | 1 W | DO-214AC (SMA) | ±10% | 100 V | |
Taiwan Semiconductor
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1 µA @ 9.1 V | 9 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1.25 W | DO-214AC (SMA) | ±5% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 11.4 V | 14 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1.25 W | DO-214AC (SMA) | ±5% | 1.2 V @ 200 mA | |
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Taiwan Semiconductor
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1 µA @ 16.7 V | 23 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1.25 W | DO-214AC (SMA) | ±5% | 1.2 V @ 200 mA | |
Microchip Technology
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10 nA @ 69.2 V | 1200 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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7.5 µA @ 1.5 V | - | Surface Mount | -65°C ~ 175°C | 500 mW | DO-213AA | ±5% | 1.5 V @ 100 mA | |
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Microchip Technology
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50 nA @ 11.4 V | - | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 1.5 V @ 100 mA | |
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Microchip Technology
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50 nA @ 13.6 V | - | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 1.5 V @ 100 mA | |
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Microchip Technology
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50 nA @ 9.8 V | - | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 1.5 V @ 100 mA | |
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Microchip Technology
|
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5 µA @ 1 V | - | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 1.5 V @ 100 mA | |
Microchip Technology
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2 µA @ 3 V | 15 Ω | Surface Mount | -65°C ~ 175°C | - | Die | ±4.83% | 6.2 V | |
Microchip Technology
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1 µA @ 5 V | 30 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±1% | 1.1 V @ 200 mA | |
Microchip Technology
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10 µA @ 1 V | 9 Ω | Surface Mount | -65°C ~ 175°C | 1 W | DO-213AB (MELF, LL41) | ±2% | 1.2 V @ 200 mA | |
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Microchip Technology
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5 µA @ 3.5 V | 3 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 | ±5% | 1.1 V @ 200 mA | |
Microchip Technology
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100 nA @ 12.2 V | 16 Ω | Surface Mount | -65°C ~ 175°C | - | DO-213AB | ±5% | 1.2 V @ 200 mA | |
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Microchip Technology
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10 nA @ 20.5 V | 150 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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- | - | Through Hole | - | - | Axial | - | - | |
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Taiwan Semiconductor
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1 µA @ 51.7 V | 150 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 1.25 W | DO-214AC (SMA) | ±5% | 1.2 V @ 200 mA | |
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Toshiba
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10 µA @ 6 V | 30 Ω | Surface Mount | -40°C ~ 150°C (TJ) | 700 mW | S-FLAT (1.6x3.5) | ±10% | 1 V @ 200 mA | |
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Toshiba
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10 µA @ 9 V | 30 Ω | Surface Mount | -40°C ~ 150°C (TJ) | 700 mW | S-FLAT (1.6x3.5) | ±10% | 1 V @ 200 mA | |
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Toshiba
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10 µA @ 11 V | 30 Ω | Surface Mount | -40°C ~ 150°C (TJ) | 700 mW | S-FLAT (1.6x3.5) | ±10% | 1 V @ 200 mA | |
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Toshiba
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10 µA @ 13 V | 30 Ω | Surface Mount | -40°C ~ 150°C (TJ) | 700 mW | S-FLAT (1.6x3.5) | ±10% | 1 V @ 200 mA | |
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Toshiba
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10 µA @ 17 V | 30 Ω | Surface Mount | -40°C ~ 150°C (TJ) | 700 mW | S-FLAT (1.6x3.5) | ±10% | 1 V @ 200 mA | |
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Toshiba
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10 µA @ 19 V | 30 Ω | Surface Mount | -40°C ~ 150°C (TJ) | 700 mW | S-FLAT (1.6x3.5) | ±10% | 1 V @ 200 mA | |
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Toshiba
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10 µA @ 21 V | 30 Ω | Surface Mount | -40°C ~ 150°C (TJ) | 700 mW | S-FLAT (1.6x3.5) | ±10% | 1 V @ 200 mA | |
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Microchip Technology
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10 nA @ 62.4 V | 800 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 nA @ 66.2 V | 1000 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 1.1 V @ 200 mA | |
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Toshiba
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10 µA @ 31.2 V | 35 Ω | Surface Mount | -40°C ~ 150°C (TJ) | 700 mW | S-FLAT (1.6x3.5) | ±10% | 1 V @ 200 mA | |
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Microchip Technology
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2 µA @ 3 V | 200 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±5% | 6.4 V | |
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Toshiba
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10 µA @ 37.6 V | 65 Ω | Surface Mount | -40°C ~ 150°C (TJ) | 700 mW | S-FLAT (1.6x3.5) | ±10% | 1 V @ 200 mA | |
Microchip Technology
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5 µA @ 1.5 V | 19 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±2% | 1.1 V @ 200 mA | |
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Microchip Technology
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500 nA @ 36 V | 105 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±2% | 1.1 V @ 200 mA | |
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Microchip Technology
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5 µA @ 2 V | 17 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±2% | 1.1 V @ 200 mA | |
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Microchip Technology
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500 nA @ 39 V | 125 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±2% | 1.1 V @ 200 mA | |
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Microchip Technology
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5 µA @ 3.5 V | 7 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±2% | 1.1 V @ 200 mA | |
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Microchip Technology
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1 µA @ 9 V | 30 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±2% | 1.1 V @ 200 mA | |
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Microchip Technology
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2 µA @ 4 V | 5 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±2% | 1.1 V @ 200 mA | |
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Microchip Technology
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15 µA @ 8 V | 30 Ω | Through Hole | -55°C ~ 175°C (TJ) | 500 mW | DO-7 | ±10% | 11.7 V | |
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Microchip Technology
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15 µA @ 8 V | 30 Ω | Through Hole | -55°C ~ 175°C (TJ) | 500 mW | DO-7 | ±5% | 11.7 V | |
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Microchip Technology
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2 µA @ 5 V | 6 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 (DO-204AH) | ±5% | 1.1 V @ 200 mA |
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