What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Comchip Technology
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3 µA @ 6.5 V | 8 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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3 µA @ 7 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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3 µA @ 8 V | 17 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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2 µA @ 8.4 V | 22 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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500 nA @ 9.9 V | 13 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 10 V | 15 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 11 V | 16 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 12 V | 17 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 14 V | 21 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 15 V | 25 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 17 V | 29 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 19 V | 35 Ω | Surface Mount | -65°C ~ 150°C | 500 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 21 V | 41 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 21 V | 44 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 23 V | 49 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
Comchip Technology
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5 µA @ 2 V | 19 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 350 mW | SOT-23-3 | ±1.91% | 1.2 V @ 100 mA | |
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Comchip Technology
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2 µA @ 8.4 V | 22 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 350 mW | SOT-23-3 | ±2% | 1.2 V @ 100 mA | |
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Comchip Technology
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5 µA @ 3 V | 11 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 350 mW | SOT-23-3 | ±1.96% | 1.2 V @ 100 mA | |
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Comchip Technology
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3 µA @ 6 V | 6 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 350 mW | SOT-23-3 | ±2% | 1.2 V @ 100 mA | |
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Comchip Technology
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100 nA @ 27 V | 70 Ω | Surface Mount | -50°C ~ 150°C (TJ) | 350 mW | SOT-23-3 | ±2% | 1.2 V @ 100 mA | |
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Comchip Technology
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5 µA @ 4 V | 7 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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3 µA @ 5 V | 5 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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3 µA @ 6 V | 6 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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3 µA @ 6.5 V | 8 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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3 µA @ 7 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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3 µA @ 8 V | 17 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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2 µA @ 8.4 V | 22 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Microchip Technology
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2 µA @ 3 V | 100 Ω | Surface Mount | 0°C ~ 75°C | - | Die | ±5% | 6.4 V | |
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Comchip Technology
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500 nA @ 9.9 V | 13 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 10 V | 15 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 11 V | 16 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 14 V | 21 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 15 V | 25 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 17 V | 29 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 18 V | 33 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 18 V | 41 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 18 V | 44 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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100 nA @ 23 V | 49 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Comchip Technology
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3 µA @ 5 V | 5 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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On Semiconductor
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100 nA @ 11 V | 16 Ω | Surface Mount | -55°C ~ 150°C | 225 mW | SOT-23-3 (TO-236) | ±5% | 900 mV @ 10 mA | |
Vishay Dale
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500 nA @ 39 V | 115 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 51 V | |
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Vishay Dale
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500 nA @ 51 V | 130 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 68 V | |
Central Semiconductor Corp
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10 µA @ 1 V | 8 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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10 µA @ 7 V | 5 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 8.4 V | 8 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 12.2 V | 16 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 16.7 V | 23 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 18.2 V | 25 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
PANJIT
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100 nA @ 35.8 V | 80 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-41 | ±5% | 47 V | |
Renesas
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