What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Diotec Semiconductor
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1 µA @ 10 V | 5 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 15 V | |
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Diotec Semiconductor
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1 µA @ 17 V | 8 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 33 V | |
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Diotec Semiconductor
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1 µA @ 7 V | 5 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 13 V | |
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Diotec Semiconductor
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1 µA @ 10 V | 6 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 16 V | |
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Diotec Semiconductor
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1 µA @ 17 V | 16 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 36 V | |
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Diotec Semiconductor
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1 µA @ 5 V | 2 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 10 V | |
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Diotec Semiconductor
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1 µA @ 10 V | 6 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 18 V | |
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Diotec Semiconductor
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1 µA @ 7 V | 4 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 12 V | |
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Diotec Semiconductor
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1 µA @ 20 V | 20 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 39 V | |
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Diotec Semiconductor
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1 µA @ 60 V | 90 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 130 V | |
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Diotec Semiconductor
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1 µA @ 24 V | 25 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 51 V | |
Diodes Incorporated
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Diotec Semiconductor
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1 µA @ 90 V | 120 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 180 V | |
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Diotec Semiconductor
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1 µA @ 14 V | 8 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 30 V | |
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Diotec Semiconductor
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1 µA @ 60 V | 80 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 120 V | |
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Diotec Semiconductor
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1 µA @ 75 V | 110 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 160 V | |
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Diotec Semiconductor
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1 µA @ 28 V | 25 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 62 V | |
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Diotec Semiconductor
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1 µA @ 20 V | 24 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 43 V | |
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Diotec Semiconductor
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1 µA @ 34 V | 25 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 68 V | |
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Diotec Semiconductor
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1 µA @ 34 V | 30 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 75 V | |
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Diotec Semiconductor
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1 µA @ 75 V | 100 Ω | Surface Mount | -50°C ~ 175°C (TJ) | 1.3 W | MELF DO-213AB | ±2% | 150 V | |
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EIC SEMICONDUCTOR INC.
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5 µA @ 114 V | 1000 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±10% | 1.2 V @ 200 mA | |
NXP Semiconductors
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50 nA @ 700 mV | 80 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | SOT-23 | ±1% | 900 mV @ 10 mA | |
Renesas
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Renesas
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Renesas
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Renesas
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120 µA @ 1 V | 100 Ω | Surface Mount | 150°C (TJ) | 200 mW | 2-URP | ±6.12% | 2.45 V | |
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Renesas
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120 µA @ 700 mV | 100 Ω | Surface Mount | 150°C (TJ) | 200 mW | 2-URP | ±6.67% | 2.25 V | |
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Renesas
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2 µA @ 3.5 V | 30 Ω | Surface Mount | 150°C (TJ) | 200 mW | 2-URP | ±4.93% | 6.8 V | |
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Renesas
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2 µA @ 13 V | 45 Ω | Surface Mount | 150°C (TJ) | 200 mW | 2-URP | ±2.2% | 17.96 V | |
Good-Ark Semiconductor
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500 nA @ 11.4 V | 9 Ω | Surface Mount | -55°C ~ 150°C (TJ) | 550 mW | DO-214AA (SMB) | ±5% | 15 V | |
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EIC SEMICONDUCTOR INC.
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10 µA @ 1 V | 9 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 12.2 V | 10 Ω | Through Hole | -65°C ~ 175°C (TJ) | 1.5 W | DO-41 | ±5% | 16 V | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 9.1 V | 6.5 Ω | Through Hole | -65°C ~ 175°C (TJ) | 1.5 W | DO-41 | ±5% | 12 V | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 76 V | 250 Ω | Through Hole | -65°C ~ 175°C (TJ) | 1.5 W | DO-41 | ±5% | 100 V | |
Renesas
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Good-Ark Semiconductor
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1 µA @ 114 V | 600 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 3 W | DO-214AA (SMB) | ±5% | 1.5 V @ 200 mA | |
NXP Semiconductors
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NXP Semiconductors
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50 nA @ 52.5 V | 255 Ω | Surface Mount | -65°C ~ 150°C | 1.5 W | SOT-223 | ±5% | 1 V @ 50 mA | |
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Renesas
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2 µA @ 3.5 V | 30 Ω | Surface Mount | 150°C (TJ) | 200 mW | 3-MPAK | ±2% | 7 V | |
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Nexperia USA Inc.
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50 nA @ 11.2 V | 40 Ω | Surface Mount | -65°C ~ 150°C | 1.5 W | SOT-223 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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EIC SEMICONDUCTOR INC.
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50 µA @ 1 V | 9 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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50 µA @ 1 V | 9 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 µA @ 1 V | 10 Ω | Through Hole | -55°C ~ 175°C (TJ) | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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500 nA @ 19.4 V | 5 Ω | Through Hole | -65°C ~ 200°C (TJ) | 5 W | DO-15 | ±10% | 1.2 V @ 1 A | |
NXP Semiconductors
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100 nA @ 8 V | 30 Ω | Surface Mount | -65°C ~ 150°C | 1.5 W | SOT-223 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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10 µA @ 1 V | 95 Ω | Surface Mount | -65°C ~ 150°C | 1.5 W | SOT-223 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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3 µA @ 4 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 1.5 W | SOT-223 | ±5% | 1 V @ 50 mA | |
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Teledyne
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10 µA @ 1 V | 28 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 3.3 V |
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