What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Microchip Technology
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10 µA @ 42.6 V | 5.5 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
Comchip Technology
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100 nA @ 17 V | 29 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Microchip Technology
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10 µA @ 42.6 V | 6 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±10% | 1.5 V @ 10 A | |
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Comchip Technology
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100 nA @ 18 V | 33 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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Microchip Technology
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10 µA @ 42.6 V | 6 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
Renesas
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Vishay Dale
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20 µA @ 1 V | 20 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 3.6 V | |
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Vishay Dale
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500 nA @ 33 V | 50 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 43 V | |
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Vishay Dale
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500 nA @ 39 V | 115 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 51 V | |
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Vishay Dale
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500 nA @ 43 V | 120 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 56 V | |
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Vishay Dale
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500 nA @ 47 V | 125 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 62 V | |
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Vishay Dale
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500 nA @ 51 V | 130 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 68 V | |
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Vishay Dale
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1 µA @ 3 V | 4 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 6.2 V | |
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Vishay Dale
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1 µA @ 4 V | 3.5 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 6.8 V | |
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Vishay Dale
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500 nA @ 56 V | 135 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 75 V | |
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Vishay Dale
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500 nA @ 8.2 V | 8 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 11 V | |
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Vishay Dale
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500 nA @ 10 V | 10 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 13 V | |
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Vishay Dale
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500 nA @ 30 V | 50 Ω | Through Hole | -55°C ~ 175°C | 1.3 W | DO-204AL (DO-41) | ±2% | 39 V | |
Microchip Technology
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- | 75 Ω | Through Hole | -25°C ~ 100°C | 500 mW | DO-35 | ±5% | 19.2 V | |
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Microchip Technology
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10 µA @ 76 V | 20 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±10% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 76 V | 20 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 76 V | 20 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 83 V | 25 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±10% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 83 V | 25 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 83 V | 25 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 83 V | 30 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±10% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 83 V | 30 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 83 V | 30 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 91.2 V | 40 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±10% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 91.2 V | 40 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 91.2 V | 40 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 99.8 V | 50 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±10% | 1.5 V @ 10 A | |
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Microchip Technology
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10 µA @ 99.8 V | 50 Ω | Chassis, Stud Mount | -65°C ~ 175°C | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
Central Semiconductor Corp
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5 µA @ 12.2 V | 16 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 16.7 V | 23 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 18.2 V | 25 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
PANJIT
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100 nA @ 35.8 V | 80 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-41 | ±5% | 47 V | |
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PANJIT
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100 nA @ 20.6 V | 35 Ω | Through Hole | -55°C ~ 150°C (TJ) | 1 W | DO-41 | ±5% | 27 V | |
Central Semiconductor Corp
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3 µA @ 6.5 V | 8 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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1 µA @ 9.1 V | 30 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 10 V | 15 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 13 V | 19 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 14 V | 21 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 14 V | 23 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Microchip Technology
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- | 200 Ω | Through Hole | -55°C ~ 100°C | 500 mW | DO-35 | ±5% | 9.1 V | |
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Central Semiconductor Corp
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100 nA @ 18 V | 33 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 19 V | 35 Ω | Surface Mount | -65°C ~ 150°C | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
Diodes Incorporated
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5 µA @ 4 V | 7 Ω | Surface Mount | -65°C ~ 150°C | 200 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Diodes Incorporated
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3 µA @ 6 V | 6 Ω | Surface Mount | -65°C ~ 150°C | 200 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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Diodes Incorporated
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1 µA @ 9.1 V | 30 Ω | Surface Mount | -65°C ~ 150°C | 200 mW | SOT-323 | ±5% | 900 mV @ 10 mA |
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