What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
Parts in this category
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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NXP Semiconductors
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5 µA @ 1 V | 13 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
NXP Semiconductors
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NXP Semiconductors
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5 µA @ 16.7 V | 23 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
NXP Semiconductors
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50 nA @ 30.1 V | 150 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SOD-523 | ±5% | 1.1 V @ 100 mA | |
Nexperia USA Inc.
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10 µA @ 2.5 V | 40 Ω | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-323F | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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EIC SEMICONDUCTOR INC.
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100 nA @ 1 V | 10 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 1 V | 6 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 1 V | 8 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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10 µA @ 1 V | 23 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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2 µA @ 1 V | 22 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 13 V | 50 Ω | Through Hole | -65°C ~ 200°C (TJ) | 500 mW | DO-35 | ±2% | 1 V @ 100 mA | |
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EIC SEMICONDUCTOR INC.
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100 nA @ 1 V | 7 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
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EIC SEMICONDUCTOR INC.
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1 µA @ 1 V | 11 Ω | Through Hole | 175°C (TJ) | 500 mW | DO-35 | ±5% | 1.2 V @ 200 mA | |
NXP Semiconductors
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50 nA @ 47.6 V | 240 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | DFN1006-2 | ±2% | 900 mV @ 10 mA | |
On Semiconductor
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50 nA @ 11.4 V | - | Surface Mount | - | 500 mW | SOD-123 | ±5% | 900 mV @ 10 mA | |
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NXP Semiconductors
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500 nA @ 4 V | 10 Ω | Surface Mount | -55°C ~ 150°C | 250 mW | DFN1006-2 | ±2% | 1.1 V @ 100 mA | |
NXP Semiconductors
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700 nA @ 5 V | 5 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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5 µA @ 1 V | 95 Ω | Surface Mount | -55°C ~ 150°C | 250 mW | DFN1006-2 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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5 µA @ 11.4 V | 14 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1.2 V @ 200 mA | |
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NXP Semiconductors
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100 nA @ 8 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | DFN1006-2 | ±2% | 900 mV @ 10 mA | |
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NXP Semiconductors
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200 nA @ 7 V | 10 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | DFN1006-2 | ±2% | 900 mV @ 10 mA | |
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NXP Semiconductors
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50 nA @ 19 V | 40 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1 V @ 50 mA | |
NXP Semiconductors
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50 nA @ 43.4 V | 215 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SOD-523 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 14 V | 24 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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50 nA @ 35.7 V | 180 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SOD-523 | ±2% | 1.1 V @ 100 mA | |
On Semiconductor
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3 µA @ 2 V | 80 Ω | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-523F | - | 4.7 V | |
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NXP Semiconductors
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50 nA @ 19 V | 30 Ω | Surface Mount | -55°C ~ 150°C | 250 mW | DFN1006-2 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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700 nA @ 6.5 V | 5 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
NXP Semiconductors
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1 µA @ 2.5 V | 40 Ω | Surface Mount | -65°C ~ 150°C | 310 mW | SOD-323F | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 12.5 V | 20 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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50 nA @ 11 V | 15 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1 V @ 50 mA | |
Renesas
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NXP Semiconductors
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50 nA @ 53 V | 225 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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NXP Semiconductors
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200 nA @ 9.1 V | 10 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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200 nA @ 9.1 V | 10 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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50 nA @ 16.8 V | 30 Ω | Surface Mount | -65°C ~ 150°C | 550 mW | SOD-323F | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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500 nA @ 6 V | 10 Ω | Surface Mount | -55°C ~ 150°C | 250 mW | DFN1006-2 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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5 µA @ 1 V | 95 Ω | Surface Mount | -55°C ~ 150°C | 500 mW | SOD-323F | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 14 V | 20 Ω | Surface Mount | -65°C ~ 150°C | 550 mW | SOD-323F | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 47.6 V | 160 Ω | Surface Mount | -65°C ~ 150°C | 550 mW | SOD-323F | ±5% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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50 nA @ 33 V | 100 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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2 µA @ 4 V | 3.5 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
NXP Semiconductors
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NXP Semiconductors
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50 nA @ 30.1 V | 150 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SOD-523 | ±2% | 1.1 V @ 100 mA | |
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NXP Semiconductors
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NXP Semiconductors
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5 µA @ 1 V | 13 Ω | Through Hole | -65°C ~ 200°C | 1.3 W | DO-41 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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2 µA @ 2 V | 7 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 1 V @ 50 mA | |
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NXP Semiconductors
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50 nA @ 43.4 V | 215 Ω | Surface Mount | -65°C ~ 150°C | 300 mW | SOD-523 | ±5% | 1.1 V @ 100 mA |
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