What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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Microchip Technology
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10 µA @ 6 V | 20 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 8.55 V | |
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Microchip Technology
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100 nA @ 8.2 V | 45 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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15 µA @ 8 V | 30 Ω | Through Hole | -55°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 11.7 V | |
Microchip Technology
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50 nA @ 12.15 V | 100 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-7 (DO-204AA) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 nA @ 27.38 V | 200 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-7 (DO-204AA) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 nA @ 62.32 V | 800 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-7 (DO-204AA) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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10 µA @ 5.5 V | 15 Ω | Through Hole | -65°C ~ 175°C (TA) | 500 mW | DO-35 (DO-204AH) | ±5% | 1.5 V @ 2 A | |
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Microchip Technology
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10 µA @ 6 V | 20 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-35 | ±5% | 9 V | |
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Microchip Technology
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Microchip Technology
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300 µA @ 1 V | 3 Ω | Surface Mount | -65°C ~ 175°C (TJ) | 5 W | D-5B | ±1% | 1.5 V @ 1 A | |
Microchip Technology
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2 µA @ 3 V | 100 Ω | Through Hole | -55°C ~ 100°C | 500 mW | DO-35 (DO-204AH) | ±5% | 6.4 V | |
Microchip Technology
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15 µA @ 8 V | 30 Ω | Surface Mount | -55°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 11.7 V | |
Microchip Technology
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2 µA @ 3 V | 50 Ω | Through Hole | -55°C ~ 100°C | 500 mW | DO-35 (DO-204AH) | ±5% | 6.4 V | |
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Microchip Technology
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2 µA @ 3 V | 50 Ω | Through Hole | -55°C ~ 100°C | 500 mW | DO-35 (DO-204AH) | ±5% | 6.4 V | |
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Microchip Technology
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100 nA @ 53 V | 270 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±10% | 1.5 V @ 200 mA | |
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Microchip Technology
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10 µA @ 114 V | 60 Ω | Stud Mount | -65°C ~ 175°C (TJ) | 50 W | DO-5 | ±5% | 1.5 V @ 10 A | |
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Microchip Technology
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15 µA @ 8 V | 30 Ω | Through Hole | -55°C ~ 175°C | 500 mW | DO-35 | ±5% | 11.7 V | |
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Microchip Technology
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500 nA @ 122 V | 1.7 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 1.3 V @ 200 mA | |
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Microchip Technology
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15 µA @ 8 V | 30 Ω | Through Hole | -55°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 11.7 V | |
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Microchip Technology
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50 nA @ 9.1 V | 60 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 1.1 V @ 200 mA | |
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Microchip Technology
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3 µA @ 1 V | 24 Ω | Through Hole | -65°C ~ 175°C (TJ) | 500 mW | DO-35 (DO-204AH) | ±5% | 1.1 V @ 200 mA | |
Microchip Technology
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5 µA @ 4.28 V | 1 Ω | Through Hole | -65°C ~ 175°C | 5 W | E, Axial | ±5% | 1.5 V @ 1 A | |
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Microchip Technology
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500 nA @ 152 V | 2.5 Ω | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 1.3 V @ 200 mA | |
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Microchip Technology
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10 nA @ 20.45 V | 150 Ω | Through Hole | -65°C ~ 175°C | 500 mW | DO-7 (DO-204AA) | ±5% | 1.1 V @ 200 mA | |
Microchip Technology
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10 µA @ 114 V | 1 Ω | Through Hole | -65°C ~ 175°C (TJ) | 1 W | DO-13 (DO-202AA) | ±5% | 1.5 V @ 200 mA | |
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Microchip Technology
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10 µA @ 5.5 V | 15 Ω | Through Hole | -65°C ~ 175°C (TA) | 500 mW | DO-7 | ±5% | 8.4 V | |
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Microchip Technology
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10 µA @ 6 V | 20 Ω | Surface Mount | -65°C ~ 175°C (TJ) | 500 mW | DO-213AA | ±5% | 9 V | |
Central Semiconductor Corp
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- | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | Die | - | 1 V @ 100 mA | |
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Central Semiconductor Corp
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100 nA @ 16 V | 55 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | Die | ±5.68% | 1 V @ 100 mA | |
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Central Semiconductor Corp
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50 nA @ 11.4 V | 100 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 250 mW | Die | ±5% | 1.1 V @ 200 mA | |
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Central Semiconductor Corp
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- | - | Surface Mount | - | - | Die | - | - | |
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Central Semiconductor Corp
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4 µA @ 1 V | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | Die | ±5% | 1.5 V @ 100 mA | |
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Central Semiconductor Corp
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- | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | Die | - | 1 V @ 100 mA | |
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Central Semiconductor Corp
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100 nA @ 1 V | 35 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | Die | ±5.88% | 1 V @ 100 mA | |
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Central Semiconductor Corp
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5 µA @ 4 V | 7 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 350 mW | Die | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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- | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | Die | - | 1 V @ 100 mA | |
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Central Semiconductor Corp
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5 µA @ 1 V | 22 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 350 mW | Die | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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1 µA @ 1 V | 11 Ω | Surface Mount | -65°C ~ 200°C (TJ) | 500 mW | Die | ±5% | 1.5 V @ 200 mA | |
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Central Semiconductor Corp
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100 nA @ 21 V | 41 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 350 mW | Die | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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5 µA @ 1 V | 22 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 350 mW | Die | ±5% | 900 mV @ 10 mA | |
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Microchip Technology
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- | - | - | - | - | - | - | - | |
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Central Semiconductor Corp
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3 µA @ 4 V | 10 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 350 mW | Die | ±6.45% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 21 V | 44 Ω | Surface Mount | -65°C ~ 200°C (TJ) | 500 mW | SOD-80 | ±5% | 1.25 V @ 200 mA | |
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Central Semiconductor Corp
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7.5 µA @ 2 V | 1700 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 250 mW | Die | ±5% | 1 V @ 200 mA | |
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Central Semiconductor Corp
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1 µA @ 1 V | 11 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | Die | ±5% | 1.5 V @ 200 mA | |
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Central Semiconductor Corp
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5 µA @ 4 V | 7 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 350 mW | Die | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 µA @ 4 V | 10 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 350 mW | Die | ±6.45% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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- | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | Die | - | 1 V @ 100 mA | |
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Central Semiconductor Corp
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- | - | Surface Mount | -65°C ~ 150°C (TJ) | 500 mW | Die | - | 1 V @ 100 mA | |
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Central Semiconductor Corp
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50 nA @ 11.4 V | 100 Ω | Surface Mount | -65°C ~ 200°C (TJ) | 250 mW | Die | ±5% | 1.1 V @ 200 mA |
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