What are Diodes - Zener - Single ?
Diodes - Zener - Single are semiconductor devices designed to allow current to flow in the reverse direction when a specific voltage is reached, providing voltage regulation. They are commonly used in applications such as voltage clamping, signal modulation, and power supply regulation. Important specifications for selection include Current, which determines the maximum current the diode can handle; Impedance (Max) (Zzt), which affects the diode's performance in high-frequency applications; and Operating Temperature, which ensures reliability under varying environmental conditions. Sourcing teams should validate lifecycle status and consider alternate-source options to mitigate supply chain risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Impedance (Max) (Zzt) | Mounting Type | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
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NXP Semiconductors
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50 nA @ 39.2 V | 200 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±5% | 900 mV @ 10 mA | |
NXP Semiconductors
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50 nA @ 21 V | 80 Ω | Surface Mount | -65°C ~ 200°C | 500 mW | LLDS; MiniMelf | ±5% | 900 mV @ 10 mA | |
NXP Semiconductors
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100 nA @ 8 V | 30 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | TO-236AB | ±5% | 900 mV @ 10 mA | |
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NXP Semiconductors
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500 nA @ 6 V | 15 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±2% | 900 mV @ 10 mA | |
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NXP Semiconductors
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100 nA @ 8 V | 25 Ω | Surface Mount | -65°C ~ 200°C | 500 mW | LLDS; MiniMelf | ±2% | 900 mV @ 10 mA | |
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NXP Semiconductors
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50 µA @ 1 V | 100 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | TO-236AB | ±5% | 900 mV @ 10 mA | |
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NXP Semiconductors
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50 nA @ 52.5 V | 255 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±5% | 900 mV @ 10 mA | |
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NXP Semiconductors
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50 nA @ 30.1 V | 150 Ω | Surface Mount | -65°C ~ 200°C | 500 mW | LLDS; MiniMelf | ±5% | 900 mV @ 10 mA | |
NXP Semiconductors
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50 nA @ 12.6 V | 20 Ω | Surface Mount | -65°C ~ 150°C (TA) | 375 mW | SOD-123F | ±5% | 900 mV @ 10 mA | |
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NXP Semiconductors
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20 µA @ 1 V | 100 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±2% | 900 mV @ 10 mA | |
Renesas
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Vishay Dale
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1 µA @ 36 V | 45 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.38% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 200 V | 1000 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±7.04% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 130 V | 400 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6.39% | 1.2 V @ 500 mA | |
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Vishay Dale
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1 µA @ 160 V | 750 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±5.68% | 1.2 V @ 500 mA | |
Central Semiconductor Corp
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1 µA @ 1.5 V | 1500 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | SOD-523 | ±5% | 900 mV @ 10 mA | |
Central Semiconductor Corp
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100 nA @ 15 V | 25 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | SOD-323 | ±5% | 900 mV @ 10 mA | |
Micro Commercial Co.
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1 µA @ 1 V | 1.5 Ω | Through Hole | -55°C ~ 150°C | 5 W | DO-15 | ±5% | 1.2 V @ 1 A | |
Central Semiconductor Corp
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2 µA @ 8.4 V | 22 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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100 nA @ 14 V | 21 Ω | Surface Mount | -65°C ~ 150°C | 350 mW | SOT-23 | ±5% | 900 mV @ 10 mA | |
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Vishay Dale
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1 µA @ 11 V | 10 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±6% | 1.2 V @ 500 mA | |
Renesas
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Vishay Dale
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3 µA @ 9.1 V | 7 Ω | Through Hole | 175°C (TJ) | 1.3 W | SOD-57 | ±5.42% | 1.2 V @ 500 mA | |
On Semiconductor
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5 µA @ 22.8 V | 40 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 30 V | |
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On Semiconductor
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5 µA @ 32.7 V | 70 Ω | Through Hole | -65°C ~ 200°C | 1 W | DO-41 | ±5% | 43 V | |
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Central Semiconductor Corp
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500 nA @ 18.2 V | 3.5 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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10 µA @ 1 V | 1.5 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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5 µA @ 7.6 V | 1 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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500 nA @ 16.7 V | 3.5 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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Central Semiconductor Corp
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100 µA @ 5.2 V | 1 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
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NXP Semiconductors
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50 nA @ 15 V | 20 Ω | Surface Mount | 150°C (TJ) | 310 mW | SOD-323F | ±5% | 1.1 V @ 100 mA | |
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On Semiconductor
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1 µA @ 152 V | 1200 Ω | Through Hole | -65°C ~ 200°C | 3 W | Axial | ±5% | 1.5 V @ 200 mA | |
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Central Semiconductor Corp
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1 µA @ 11.5 V | 2.5 Ω | Through Hole | -65°C ~ 200°C | 5 W | DO-201 | ±5% | 1.2 V @ 1 A | |
Nexperia USA Inc.
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50 nA @ 25.2 V | 90 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±5% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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50 nA @ 27.3 V | 130 Ω | Surface Mount | -65°C ~ 150°C | 250 mW | TO-236AB | ±5% | 900 mV @ 10 mA | |
Nexperia USA Inc.
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100 nA @ 8 V | 25 Ω | Surface Mount | 150°C (TJ) | 275 mW | SOT-323 | ±5% | 900 mV @ 10 mA | |
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On Semiconductor
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700 nA @ 5 V | 15 Ω | Surface Mount | -65°C ~ 150°C (TJ) | 225 mW | SOT-23-3 (TO-236) | ±5% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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50 nA @ 9.8 V | 35 Ω | Through Hole | 175°C | 500 mW | ALF2 | ±2% | 1.5 V @ 200 mA | |
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Nexperia USA Inc.
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50 nA @ 23.1 V | 120 Ω | Through Hole | -55°C ~ 175°C | 500 mW | ALF2 | ±2% | 1.5 V @ 200 mA | |
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Nexperia USA Inc.
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100 nA @ 8 V | 35 Ω | Through Hole | -55°C ~ 175°C | 500 mW | ALF2 | ±2% | 1.5 V @ 200 mA | |
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Nexperia USA Inc.
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500 nA @ 6 V | 20 Ω | Through Hole | -55°C ~ 175°C | 500 mW | ALF2 | ±2% | 1.5 V @ 200 mA | |
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Nexperia USA Inc.
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50 nA @ 21 V | 100 Ω | Through Hole | -55°C ~ 175°C | 500 mW | ALF2 | ±2% | 1.5 V @ 200 mA | |
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Nexperia USA Inc.
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10 µA @ 1 V | 100 Ω | Through Hole | -55°C ~ 175°C | 500 mW | ALF2 | ±3% | 1.5 V @ 200 mA | |
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Nexperia USA Inc.
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50 nA @ 10.5 V | 30 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±2% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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50 nA @ 10.5 V | 30 Ω | Through Hole | -65°C ~ 200°C (TJ) | 400 mW | ALF2 | ±2% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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50 nA @ 10.5 V | 30 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±2% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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50 nA @ 52.5 V | 255 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±2% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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100 nA @ 8 V | 25 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±2% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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100 nA @ 8 V | 25 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±2% | 900 mV @ 10 mA | |
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Nexperia USA Inc.
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100 nA @ 8 V | 25 Ω | Through Hole | -65°C ~ 200°C | 400 mW | ALF2 | ±2% | 900 mV @ 10 mA |
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