What are Diodes - Zener - Arrays ?
Diodes - Zener - Arrays are semiconductor devices designed to maintain a stable voltage across their terminals. They are commonly used in applications such as voltage regulation, signal clipping, and transient voltage suppression. Important specifications for selection include Configuration, which determines how the diodes are arranged; Current, which affects the load they can handle; and Operating Temperature, which ensures reliability under varying environmental conditions. Validating lifecycle status and sourcing options is crucial for procurement teams to ensure compatibility and availability.
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| Part & Mfr | Total Stock | Pricing & RFQ | Configuration | Current | Impedance (Max) (Zzt) | Operating Temperature | Power | Supplier Device Package | Tolerance | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|
Central Semiconductor Corp
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3 Independent | 100 µA @ 1 V | 30 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 75 µA @ 1 V | 30 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 75 µA @ 1 V | 30 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 50 µA @ 1 V | 29 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 25 µA @ 1 V | 28 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 15 µA @ 1 V | 24 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 10 µA @ 1 V | 23 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 5 µA @ 1 V | 22 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 5 µA @ 2 V | 19 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 5 µA @ 2 V | 17 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 5 µA @ 3 V | 11 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 5 µA @ 3.5 V | 7 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 3 µA @ 4 V | 7 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 3 µA @ 5 V | 5 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 3 µA @ 6 V | 6 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 3 µA @ 6.5 V | 8 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 3 µA @ 6.5 V | 8 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 3 µA @ 7 V | 10 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 3 µA @ 8 V | 17 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 2 µA @ 8.4 V | 22 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 1 µA @ 9.1 V | 30 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 500 nA @ 9.9 V | 13 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 10 V | 15 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 11 V | 16 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 12 V | 17 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 13 V | 19 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 14 V | 21 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 14 V | 23 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 15 V | 25 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 17 V | 29 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 18 V | 33 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 19 V | 35 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 21 V | 41 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 21 V | - | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 23 V | 49 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 25 V | 58 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 27 V | 70 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 30 V | 80 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 33 V | - | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Central Semiconductor Corp
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3 Independent | 100 nA @ 36 V | - | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
Diodes Incorporated
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2 Independent | 100 nA @ 18 V | 33 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Diodes Incorporated
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2 Independent | 1 µA @ 5 V | 15 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±6% | 900 mV @ 10 mA | |
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Diodes Incorporated
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Diodes Incorporated
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1 Pair Common Cathode | 100 nA @ 18 V | 80 Ω | -65°C ~ 150°C (TJ) | 300 mW | SOT-23-3 | ±5.83% | 24 V | |
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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2 Independent | 50 µA @ 1 V | 30 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Diodes Incorporated
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2 Independent | 100 nA @ 15 V | 25 Ω | -65°C ~ 150°C (TJ) | 200 mW | SOT-363 | ±5% | 900 mV @ 10 mA | |
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Diodes Incorporated
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