What are Diodes - Rectifiers - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Capacitance @ Vr, F | Current | Mounting Type | Operating Temperature | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Technology | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micro Commercial Co.
|
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150pF @ 4V, 1MHz | 6A | Surface Mount | -55°C ~ 150°C | - | Standard Recovery >500ns, > 200mA (Io) | SMC (DO-214AB) | Standard | 1 V @ 6 A | |
Vishay Dale
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92pF @ 5V, 1MHz | 3.5A | Surface Mount | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | D-PAK (TO-252AA) | Schottky | 810 mV @ 3 A | |
PANJIT
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- | 8A | Through Hole | -55°C ~ 175°C | 28 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 2.4 V @ 8 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 125°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 550 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Vishay Dale
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92pF @ 5V, 1MHz | 3.5A | Surface Mount | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | D-PAK (TO-252AA) | Schottky | 810 mV @ 3 A | |
Taiwan Semiconductor
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- | 1.5A | Surface Mount | -55°C ~ 150°C | 75 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-214AC (SMA) | Standard | 1.4 V @ 1.5 A | |
Vishay Dale
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- | 800mA | Through Hole | -55°C ~ 150°C | 400 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Standard | 1.25 V @ 400 mA | |
Vishay Dale
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- | 2A | Through Hole | 140°C (Max) | 2 µs | Standard Recovery >500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.6 V @ 3 A | |
Vishay Dale
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- | 1.5A | Through Hole | -55°C ~ 175°C | 4 µs | Standard Recovery >500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.1 V @ 1 A | |
Vishay Dale
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- | 1.4A | Through Hole | -55°C ~ 175°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.3 V @ 1 A | |
Vishay Dale
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- | 1.9A | Through Hole | -55°C ~ 175°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.1 V @ 1 A | |
Vishay Dale
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- | 1.25A | Through Hole | -55°C ~ 175°C | 100 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.5 V @ 1 A | |
Vishay Dale
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- | 1.5A | Through Hole | -55°C ~ 175°C | 300 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.5 V @ 1 A | |
Vishay Dale
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20pF @ 4V, 1MHz | 2A | Through Hole | -55°C ~ 175°C | 4 µs | Standard Recovery >500ns, > 200mA (Io) | SOD-57 | Avalanche | 1 V @ 1 A | |
Vishay Dale
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- | 2A | Through Hole | 140°C (Max) | 2 µs | Standard Recovery >500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.6 V @ 3 A | |
Vishay Dale
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- | 1.5A | Through Hole | -55°C ~ 175°C | 4 µs | Standard Recovery >500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.1 V @ 1 A | |
Vishay Dale
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- | 1.4A | Through Hole | -55°C ~ 175°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.3 V @ 1 A | |
Vishay Dale
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- | 1.9A | Through Hole | -55°C ~ 175°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.1 V @ 1 A | |
Vishay Dale
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- | 1.25A | Through Hole | -55°C ~ 175°C | 100 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.5 V @ 1 A | |
Vishay Dale
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- | 1.5A | Through Hole | -55°C ~ 175°C | 300 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.5 V @ 1 A | |
Vishay Dale
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- | 2A | Through Hole | -55°C ~ 175°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-57 | Avalanche | 1.1 V @ 1 A | |
Vishay Dale
|
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20pF @ 4V, 1MHz | 2A | Through Hole | -55°C ~ 175°C | 4 µs | Standard Recovery >500ns, > 200mA (Io) | SOD-57 | Avalanche | 1 V @ 1 A | |
Diodes Incorporated
|
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- | 12A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | PowerDI™ 5 | Schottky | 800 mV @ 12 A | |
Diodes Incorporated
|
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- | 12A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | PowerDI™ 5 | Schottky | 800 mV @ 12 A | |
Taiwan Semiconductor
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25pF @ 4V, 1MHz | 2A | Surface Mount | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-214AC (SMA) | Standard | 950 mV @ 2 A | |
Taiwan Semiconductor
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25pF @ 4V, 1MHz | 2A | Surface Mount | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-214AC (SMA) | Standard | 950 mV @ 2 A | |
Micro Commercial Co.
|
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- | 8A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Standard | 950 mV @ 8 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
|
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 700 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 800 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 800 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 800 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 800 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 800 mV @ 1 A | |
Taiwan Semiconductor
|
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 800 mV @ 1 A | |
Taiwan Semiconductor
|
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 800 mV @ 1 A | |
Taiwan Semiconductor
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- | 1A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 800 mV @ 1 A | |
Taiwan Semiconductor
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- | 2A | Surface Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Sub SMA | Schottky | 850 mV @ 2 A |