What are Diodes - Rectifiers - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Capacitance @ Vr, F | Current | Mounting Type | Operating Temperature | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Technology | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor
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80pF @ 4V, 1MHz | 4A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 1.7 V @ 4 A | |
Taiwan Semiconductor
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80pF @ 4V, 1MHz | 4A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 1.7 V @ 4 A | |
Taiwan Semiconductor
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100pF @ 4V, 1MHz | 6A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 975 mV @ 6 A | |
Taiwan Semiconductor
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100pF @ 4V, 1MHz | 6A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 975 mV @ 6 A | |
Taiwan Semiconductor
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100pF @ 4V, 1MHz | 6A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 975 mV @ 6 A | |
Taiwan Semiconductor
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100pF @ 4V, 1MHz | 6A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 975 mV @ 6 A | |
Taiwan Semiconductor
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100pF @ 4V, 1MHz | 6A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 975 mV @ 6 A | |
Taiwan Semiconductor
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100pF @ 4V, 1MHz | 6A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 975 mV @ 6 A | |
Taiwan Semiconductor
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100pF @ 4V, 1MHz | 6A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 975 mV @ 6 A | |
Taiwan Semiconductor
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50pF @ 4V, 1MHz | 6A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 1.3 V @ 6 A | |
Taiwan Semiconductor
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50pF @ 4V, 1MHz | 6A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 1.3 V @ 6 A | |
Taiwan Semiconductor
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50pF @ 4V, 1MHz | 6A | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 1.3 V @ 6 A | |
Taiwan Semiconductor
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- | 12A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Schottky | 550 mV @ 12 A | |
Taiwan Semiconductor
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- | 12A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Schottky | 550 mV @ 12 A | |
Taiwan Semiconductor
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- | 12A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Schottky | 550 mV @ 12 A | |
Taiwan Semiconductor
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- | 12A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Schottky | 550 mV @ 12 A | |
Taiwan Semiconductor
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- | 12A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Schottky | 550 mV @ 12 A | |
Taiwan Semiconductor
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- | 15A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | R-6 | Schottky | 550 mV @ 15 A | |
Taiwan Semiconductor
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- | 15A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | R-6 | Schottky | 550 mV @ 15 A | |
Taiwan Semiconductor
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- | 15A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | R-6 | Schottky | 550 mV @ 15 A | |
Taiwan Semiconductor
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- | 15A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | R-6 | Schottky | 550 mV @ 15 A | |
Taiwan Semiconductor
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- | 15A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | R-6 | Schottky | 550 mV @ 15 A | |
Taiwan Semiconductor
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- | 15A | Through Hole | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | R-6 | Schottky | 550 mV @ 15 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 125°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 550 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 125°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 550 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 125°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 550 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 125°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 550 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 125°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 550 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 700 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 700 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 700 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 850 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 850 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 850 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 950 mV @ 2 A | |
Taiwan Semiconductor
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- | 2A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-204AC (DO-15) | Schottky | 950 mV @ 2 A | |
Taiwan Semiconductor
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- | 3A | Through Hole | -55°C ~ 125°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Schottky | 550 mV @ 3 A | |
On Semiconductor
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Taiwan Semiconductor
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- | 8A | Through Hole | -55°C ~ 125°C | - | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Schottky | 550 mV @ 8 A | |
Vishay Dale
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Vishay Dale
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Vishay Dale
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Vishay Dale
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Vishay Dale
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Infineon Technologies
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ROHM Semiconductor
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6pF @ 10V, 1MHz | 100mA | Surface Mount | 125°C (Max) | - | Small Signal =< 200mA (Io), Any Speed | UMD3F | Schottky | 450 mV @ 100 mA | |
Infineon Technologies
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- | 30A | Surface Mount | -55°C ~ 150°C | - | Standard Recovery >500ns, > 200mA (Io) | Die | Standard | 1.25 V @ 30 A | |
Infineon Technologies
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- | 30A | Surface Mount | -40°C ~ 175°C | - | Standard Recovery >500ns, > 200mA (Io) | Die | Standard | 1.95 V @ 30 A | |
ROHM Semiconductor
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Comchip Technology
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10pF @ 1V, 1MHz | 200mA | Surface Mount | 125°C (Max) | 5 ns | Small Signal =< 200mA (Io), Any Speed | 0603/SOD-523F | Schottky | 1 V @ 200 mA |