What are Diodes - Rectifiers - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Capacitance @ Vr, F | Current | Mounting Type | Operating Temperature | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Technology | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Incorporated
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400pF @ 4V, 1MHz | 10A | Through Hole | -65°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Schottky | 950 mV @ 10 A | |
Diodes Incorporated
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400pF @ 4V, 1MHz | 10A | Through Hole | -65°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Schottky | 840 mV @ 10 A | |
NXP Semiconductors
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1.5pF @ 0V, 1MHz | 250mA | Surface Mount | 150°C (Max) | 4 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-110 | Standard | 1.25 V @ 150 mA | |
NXP Semiconductors
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- | 8A | Through Hole | 150°C (Max) | 135 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 1.85 V @ 20 A | |
NXP Semiconductors
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- | 8A | Through Hole | 150°C (Max) | 135 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220FP | Standard | 1.85 V @ 20 A | |
NXP Semiconductors
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- | 8A | Through Hole | 150°C (Max) | 135 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220FP | Standard | 1.85 V @ 20 A | |
NXP Semiconductors
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- | 8A | Through Hole | 150°C (Max) | 135 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220FP | Standard | 1.85 V @ 20 A | |
NXP Semiconductors
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10pF @ 1V, 1MHz | 200mA | Surface Mount | 125°C (Max) | 5 ns | Small Signal =< 200mA (Io), Any Speed | SMT3; MPAK | Schottky | 800 mV @ 100 mA | |
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660pF @ 0V, 1MHz | 10A | Through Hole | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-220-2 | SiC (Silicon Carbide) Schottky | 1.4 V @ 10 A | |
Good-Ark Semiconductor
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120pF @ 0V, 1MHz | 3.5A | Through Hole | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-220-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 2 A | |
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120pF @ 0V, 1MHz | 3.5A | Surface Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-263-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 2 A | |
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220pF @ 0V, 1MHz | 7A | Surface Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-252-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 4 A | |
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340pF @ 0V, 1MHz | 10A | Through Hole | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-220-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 6 A | |
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340pF @ 0V, 1MHz | 10A | Surface Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-263-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 6 A | |
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550pF @ 0V, 1MHz | 16.5A | Through Hole | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-220-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 10 A | |
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550pF @ 0V, 1MHz | 16.5A | Surface Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-263-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 10 A | |
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455pF @ 0V, 1MHz | 17.5A | Through Hole | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-220-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 5 A | |
NXP Semiconductors
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70pF @ 5V, 1MHz | 1A | Surface Mount | 150°C (Max) | - | Fast Recovery =< 500ns, > 200mA (Io) | SMT3; MPAK | Schottky | 450 mV @ 1 A | |
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470pF @ 0V, 1MHz | 12.5A | Through Hole | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-220-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 8 A | |
NXP Semiconductors
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- | 6A | Through Hole | 150°C (Max) | 160 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220FP | Standard | 1.6 V @ 6.5 A | |
NXP Semiconductors
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- | 7A | Through Hole | 150°C (Max) | 350 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220FP | Standard | 2 V @ 20 A | |
NXP Semiconductors
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- | 12A | Through Hole | 150°C (Max) | 350 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220FP | Standard | 1.3 V @ 6.5 A | |
NXP Semiconductors
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- | 8A | Through Hole | 150°C (Max) | 135 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 1.85 V @ 20 A | |
NXP Semiconductors
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- | 8A | Through Hole | 150°C (Max) | 135 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 1.85 V @ 20 A | |
NXP Semiconductors
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- | 6A | Through Hole | 150°C (Max) | 230 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220FP | Standard | 1.45 V @ 6.5 A | |
NXP Semiconductors
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- | 10A | Through Hole | 150°C (Max) | 600 ns | Standard Recovery >500ns, > 200mA (Io) | TO-220FP | Standard | 1.8 V @ 20 A | |
NXP Semiconductors
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- | 12A | Through Hole | 150°C (Max) | 350 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Standard | 1.3 V @ 6.5 A | |
NXP Semiconductors
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- | 10A | Through Hole | 150°C (Max) | 220 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220FP | Standard | 1.35 V @ 6.5 A | |
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455pF @ 0V, 1MHz | 17.5A | Surface Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-252-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 5 A | |
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827pF @ 0V, 1MHz | 14.4A | Through Hole | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-247-2 | SiC (Silicon Carbide) Schottky | 2 V @ 10 A | |
NXP Semiconductors
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- | 4A | Through Hole | 150°C (Max) | 65 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 1.28 V @ 4 A | |
NXP Semiconductors
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- | 4A | Through Hole | 150°C (Max) | 65 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 1.28 V @ 4 A | |
NXP Semiconductors
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- | 4A | Through Hole | 150°C (Max) | 65 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-201AD | Standard | 1.28 V @ 4 A | |
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1100pF @ 0V, 1MHz | 57A | Through Hole | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-220-2 | SiC (Silicon Carbide) Schottky | 1.45 V @ 20 A | |
NXP Semiconductors
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- | 8A | Surface Mount | 175°C (Max) | 18 ns | Fast Recovery =< 500ns, > 200mA (Io) | D2PAK | Standard | 3.4 V @ 8 A | |
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455pF @ 0V, 1MHz | 17.5A | Surface Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-252-2 | SiC (Silicon Carbide) Schottky | 1.8 V @ 5 A | |
NXP Semiconductors
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NXP Semiconductors
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NXP Semiconductors
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NXP Semiconductors
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NXP Semiconductors
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NXP Semiconductors
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NXP Semiconductors
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1.5pF @ 0V, 1MHz | 215mA | Surface Mount | 150°C (Max) | 4 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-323 | Standard | 1.25 V @ 150 mA | |
NXP Semiconductors
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2pF @ 0V, 1MHz | 250mA | Surface Mount | 150°C (Max) | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-323 | Standard | 1.25 V @ 200 mA | |
NXP Semiconductors
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2pF @ 0V, 1MHz | 250mA | Surface Mount | 150°C (Max) | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-323 | Standard | 1.25 V @ 200 mA | |
NXP Semiconductors
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1pF @ 0V, 1MHz | 215mA | Surface Mount | 150°C (Max) | 4 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOD-323 | Standard | 1.25 V @ 150 mA | |
NXP Semiconductors
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5pF @ 0V, 1MHz | 120mA | Surface Mount | 150°C (Max) | - | Small Signal =< 200mA (Io), Any Speed | SOT-23 (TO-236AB) | Schottky | 1 V @ 40 mA | |
NXP Semiconductors
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NXP Semiconductors
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