What are Diodes - Rectifiers - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Capacitance @ Vr, F | Current | Mounting Type | Operating Temperature | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Technology | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
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- | - | - | - | - | - | - | - | - | |
Taiwan Semiconductor
|
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- | 7.5A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Schottky | 750 mV @ 7.5 A | |
Taiwan Semiconductor
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- | 7.5A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Schottky | 920 mV @ 7.5 A | |
Taiwan Semiconductor
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- | 7.5A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AC | Schottky | 920 mV @ 7.5 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 850 mV @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 1.05 V @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 1.05 V @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 1.05 V @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 700 mV @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 700 mV @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 700 mV @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 700 mV @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 800 mV @ 10 A | |
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
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- | - | - | - | - | - | - | - | - | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 800 mV @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 800 mV @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 800 mV @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 850 mV @ 10 A | |
Taiwan Semiconductor
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- | 10A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 850 mV @ 10 A | |
Taiwan Semiconductor
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- | 16A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 850 mV @ 16 A | |
Taiwan Semiconductor
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- | 16A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 850 mV @ 16 A | |
Taiwan Semiconductor
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- | 16A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 950 mV @ 16 A | |
Taiwan Semiconductor
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- | 16A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 950 mV @ 16 A | |
Taiwan Semiconductor
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- | 16A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 630 mV @ 16 A | |
Taiwan Semiconductor
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- | 16A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 630 mV @ 16 A | |
Taiwan Semiconductor
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- | 16A | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AC | Schottky | 630 mV @ 16 A | |
Yangzhou Yangjie Electronic Technology Co.,Ltd
|
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- | - | - | - | - | - | - | - | - | |
Vishay Dale
|
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 120 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-203AB (DO-5) | Standard, Reverse Polarity | 1.75 V @ 267 A | |
Vishay Dale
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 120 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-203AB (DO-5) | Standard, Reverse Polarity | 1.75 V @ 267 A | |
Microchip Technology
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Microchip Technology
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- | 3A | Surface Mount | -65°C ~ 175°C | 400 ns | Fast Recovery =< 500ns, > 200mA (Io) | D-5B | Standard | 1.5 V @ 9 A | |
Microchip Technology
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- | 1.3A | Through Hole | -65°C ~ 155°C | 30 ns | Fast Recovery =< 500ns, > 200mA (Io) | E-PAK | Standard | 1.76 V @ 18.8 A | |
Microchip Technology
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- | 1.3A | Through Hole | -65°C ~ 155°C | 30 ns | Fast Recovery =< 500ns, > 200mA (Io) | E-PAK | Standard | 1.76 V @ 18.8 A | |
Microchip Technology
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4pF @ 0V, 1MHz | 200mA | Surface Mount | -65°C ~ 200°C | 20 ns | Fast Recovery =< 500ns, > 200mA (Io) | UB | Standard | 1.2 V @ 100 mA | |
Microchip Technology
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4pF @ 0V, 1MHz | 200mA | Surface Mount | -65°C ~ 200°C | 20 ns | Small Signal =< 200mA (Io), Any Speed | UB2 | Standard | 1.2 V @ 100 mA | |
Microchip Technology
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4pF @ 0V, 1MHz | 200mA | Surface Mount | -65°C ~ 200°C | 20 ns | Small Signal =< 200mA (Io), Any Speed | UB2R | Standard | 1.2 V @ 100 mA | |
Microchip Technology
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Microchip Technology
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40pF @ 10V, 1MHz | 1.75A | Surface Mount | -65°C ~ 150°C | 45 ns | Fast Recovery =< 500ns, > 200mA (Io) | B, SQ-MELF | Standard | 1.35 V @ 2 A | |
GeneSiC Semiconductor
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-5 | Standard | 1.4 V @ 85 A | |
Microchip Technology
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- | 1A | Surface Mount | -55°C ~ 175°C | 25 ns | Fast Recovery =< 500ns, > 200mA (Io) | A, SQ-MELF | Standard | 975 mV @ 1 A | |
GeneSiC Semiconductor
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 500 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-5 | Standard | 1.4 V @ 85 A | |
GeneSiC Semiconductor
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 200 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-5 | Standard | 1.4 V @ 85 A | |
GeneSiC Semiconductor
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 500 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-5 | Standard | 1.4 V @ 85 A | |
GeneSiC Semiconductor
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 500 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-5 | Standard | 1.4 V @ 85 A | |
GeneSiC Semiconductor
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 250 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-5 | Standard | 1.4 V @ 85 A | |
GeneSiC Semiconductor
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 500 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-5 | Standard | 1.4 V @ 85 A | |
GeneSiC Semiconductor
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 500 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-5 | Standard | 1.4 V @ 85 A | |
GeneSiC Semiconductor
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- | 85A | Chassis, Stud Mount | -40°C ~ 125°C | 500 ns | Fast Recovery =< 500ns, > 200mA (Io) | DO-5 | Standard | 1.3 V @ 85 A | |
Microchip Technology
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4pF @ 0V, 1MHz | 200mA | Surface Mount | -65°C ~ 200°C | 20 ns | Fast Recovery =< 500ns, > 200mA (Io) | UB | Standard | 1.2 V @ 100 mA | |
Microchip Technology
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4pF @ 0V, 1MHz | 200mA | Surface Mount | -65°C ~ 200°C | 20 ns | Small Signal =< 200mA (Io), Any Speed | UB2 | Standard | 1.2 V @ 100 mA |