What are Diodes - Rectifiers - Single ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Capacitance @ Vr, F | Current | Mounting Type | Operating Temperature | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Technology | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Sanken
|
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- | 1A | Surface Mount | -40°C ~ 150°C | 19 µs | Standard Recovery >500ns, > 200mA (Io) | SMD | Standard | 1.05 V @ 1 A | |
Sanken
|
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- | 5A | Through Hole | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-2L | Schottky | 550 mV @ 5 A | |
Sanken
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- | 5A | Through Hole | -40°C ~ 150°C | 40 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-2L | Standard | 980 mV @ 5 A | |
Sanken
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- | 5A | Through Hole | -40°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-2L | Standard | 1.5 V @ 5 A | |
Sanken
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- | 10A | Through Hole | -40°C ~ 150°C | 100 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-2L | Standard | 1.3 V @ 10 A | |
Sanken
|
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- | 10A | Through Hole | -40°C ~ 150°C | 25 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-2L | Standard | 1.5 V @ 10 A | |
Microsemi Corporation
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- | 100 nA @ 144 V | Through Hole | - | - | - | DO-35 | - | 1.5 V @ 200 mA | |
Microsemi Corporation
|
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3000pF @ 5V, 1MHz | 120A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 910 mV @ 120 A | |
Microsemi Corporation
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7500pF @ 5V, 1MHz | 180A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 700 mV @ 180 A | |
Microsemi Corporation
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7500pF @ 5V, 1MHz | 180A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 700 mV @ 180 A | |
Microsemi Corporation
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7500pF @ 5V, 1MHz | 180A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 700 mV @ 180 A | |
Microsemi Corporation
|
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7000pF @ 5V, 1MHz | 180A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 550 mV @ 180 A | |
Microsemi Corporation
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10500pF @ 5V, 1MHz | 240A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 550 mV @ 240 A | |
Microsemi Corporation
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10500pF @ 5V, 1MHz | 240A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 550 mV @ 240 A | |
Microsemi Corporation
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10500pF @ 5V, 1MHz | 240A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 550 mV @ 240 A | |
Microsemi Corporation
|
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6000pF @ 5V, 1MHz | 240A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 860 mV @ 240 A | |
Microsemi Corporation
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6000pF @ 5V, 1MHz | 240A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 860 mV @ 240 A | |
Microsemi Corporation
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275pF @ 10V, 1Mhz | 100A | Chassis Mount | - | 90 ns | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Standard, Reverse Polarity | 1.35 V @ 100 A | |
Microsemi Corporation
|
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- | 100 nA @ 144 V | Through Hole | - | - | - | DO-35 | - | 1.5 V @ 200 mA | |
Microsemi Corporation
|
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- | 300A | Chassis Mount | - | - | Standard Recovery >500ns, > 200mA (Io) | Die | Standard, Reverse Polarity | 1.1 V @ 300 A | |
Microsemi Corporation
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6400pF @ 5V, 1MHz | 240A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | HALF-PAK | Schottky, Reverse Polarity | 860 mV @ 240 A | |
Microsemi Corporation
|
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40pF @ 10V, 1MHz | 1.4A | Surface Mount | -65°C ~ 150°C | 60 ns | Fast Recovery =< 500ns, > 200mA (Io) | D-5B | Standard | 1.4 V @ 1.4 A | |
On Semiconductor
|
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4pF @ 0V, 1MHz | 200mA | Surface Mount | 150°C (Max) | 4 ns | Small Signal =< 200mA (Io), Any Speed | SOT-23-3 | Standard | 1 V @ 10 mA | |
IXYS
|
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7pF @ 700V, 1MHz | 30A | Surface Mount | -55°C ~ 175°C | - | Standard Recovery >500ns, > 200mA (Io) | TO-263AA | Standard | 1.26 V @ 30 A | |
IXYS
|
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7pF @ 700V, 1MHz | 30A | Surface Mount | -55°C ~ 175°C | - | Standard Recovery >500ns, > 200mA (Io) | TO-263AA | Standard | 1.26 V @ 30 A | |
IXYS
|
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7pF @ 700V, 1MHz | 30A | Surface Mount | -55°C ~ 175°C | - | Standard Recovery >500ns, > 200mA (Io) | TO-263AA | Standard | 1.26 V @ 30 A | |
IXYS
|
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2220pF @ 24V, 1MHz | 300A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | SOT-227B | Schottky | 1.03 V @ 300 A | |
IXYS
|
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16500pF @ 5V, 1MHz | 300A | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | SOT-227B | Schottky | 840 mV @ 300 A | |
IXYS
|
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- | 10A | Surface Mount | -55°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AA | Schottky | 840 mV @ 10 A | |
IXYS
|
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- | 16A | Surface Mount | -55°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AA | Schottky | 670 mV @ 15 A | |
Microsemi Corporation
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- | 100 nA @ 152 V | Through Hole | - | - | - | DO-35 | - | 1.5 V @ 200 mA | |
IXYS
|
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- | 16A | Surface Mount | -55°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AA | Schottky | 790 mV @ 15 A | |
IXYS
|
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- | 1950A | Chassis Mount | - | - | Standard Recovery >500ns, > 200mA (Io) | - | Standard | 1.15 V @ 3400 A | |
Toshiba
|
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35pF @ 650V, 1MHz | 6A | Through Hole | 175°C (Max) | 0 ns | No Recovery Time > 500mA (Io) | TO-220-2L | SiC (Silicon Carbide) Schottky | 1.7 V @ 6 A | |
Toshiba
|
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44pF @ 650V, 1MHz | 8A | Through Hole | 175°C (Max) | 0 ns | No Recovery Time > 500mA (Io) | TO-220-2L | SiC (Silicon Carbide) Schottky | 1.7 V @ 8 A | |
Toshiba
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65pF @ 650V, 1MHz | 12A | Through Hole | 175°C (Max) | 0 ns | No Recovery Time > 500mA (Io) | TO-220-2L | SiC (Silicon Carbide) Schottky | 1.7 V @ 12 A | |
Microchip Technology
|
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- | 1A | Surface Mount | -65°C ~ 175°C | 300 ns | Fast Recovery =< 500ns, > 200mA (Io) | D-5A | Standard | 1.6 V @ 3 A | |
Microchip Technology
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25pF @ 10V, 1MHz | 2.5A | Surface Mount | -65°C ~ 175°C | 25 ns | Fast Recovery =< 500ns, > 200mA (Io) | D-5A | Standard | 975 mV @ 2.5 A | |
Microchip Technology
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10pF @ 10V, 1MHz | 2A | Through Hole | -65°C ~ 150°C | 30 ns | Fast Recovery =< 500ns, > 200mA (Io) | A, Axial | Standard | 1.6 V @ 2 A | |
Microchip Technology
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40pF @ 10V, 1MHz | 1.75A | Surface Mount | -65°C ~ 150°C | 30 ns | Fast Recovery =< 500ns, > 200mA (Io) | D-5B | Standard | 1.35 V @ 1.2 A | |
Microsemi Corporation
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- | 1.4A | Through Hole | -65°C ~ 175°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | - | Standard | 1.4 V @ 1.4 A | |
Microchip Technology
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- | 3A | Surface Mount | -65°C ~ 175°C | 250 ns | Fast Recovery =< 500ns, > 200mA (Io) | D-5B | Standard | 1.5 V @ 9 A | |
Microchip Technology
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10pF @ 10V, 1MHz | 1A | Surface Mount | -65°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | D-5A | Standard | 1.55 V @ 1 A | |
Microsemi Corporation
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40pF @ 10V, 1MHz | 1.4A | Surface Mount | -65°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | D-5B | Standard | 1.4 V @ 1.4 A | |
Microchip Technology
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- | 1A | Through Hole | -65°C ~ 175°C | 5 µs | Standard Recovery >500ns, > 200mA (Io) | A, Axial | Standard | 1.3 V @ 3 A | |
Microchip Technology
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- | 3A | Surface Mount | -65°C ~ 175°C | 150 ns | Fast Recovery =< 500ns, > 200mA (Io) | D-5B | Standard | 1.5 V @ 9 A | |
Microchip Technology
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- | 3A | Through Hole | -65°C ~ 175°C | 150 ns | Fast Recovery =< 500ns, > 200mA (Io) | B, Axial | Standard | 1.5 V @ 9 A | |
Microchip Technology
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- | 3A | Through Hole | -65°C ~ 175°C | 150 ns | Fast Recovery =< 500ns, > 200mA (Io) | B, Axial | Standard | 1.5 V @ 9 A | |
Microchip Technology
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- | 1A | Surface Mount | -65°C ~ 200°C | 2 µs | Standard Recovery >500ns, > 200mA (Io) | D-5A | Standard | 1.3 V @ 3 A | |
Microchip Technology
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25pF @ 10V, 1MHz | 1A | Through Hole | -65°C ~ 175°C | 25 ns | Fast Recovery =< 500ns, > 200mA (Io) | A, Axial | Standard | 875 mV @ 1 A |