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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Diode Configuration | Mounting Type | Operating Temperature | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Technology | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division
|
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50 A @ 45 V | - | Surface Mount | -65°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 630 mV @ 7.5 A | |
Vishay General Semiconductor - Diodes Division
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50 A @ 45 V | - | Surface Mount | -65°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 630 mV @ 7.5 A | |
Vishay General Semiconductor - Diodes Division
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50 A @ 60 V | - | Surface Mount | -65°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 7.3 V @ 7.5 A | |
Vishay General Semiconductor - Diodes Division
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50 A @ 60 V | - | Surface Mount | -65°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 7.3 V @ 7.5 A | |
Vishay General Semiconductor - Diodes Division
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100 A @ 45 V | - | Surface Mount | -65°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 630 mV @ 10 A | |
Vishay General Semiconductor - Diodes Division
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80 A @ 45 V | - | Surface Mount | -65°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 620 mV @ 15 A | |
Vishay General Semiconductor - Diodes Division
|
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80 A @ 45 V | - | Surface Mount | -65°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 620 mV @ 15 A | |
Vishay General Semiconductor - Diodes Division
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60 A @ 60 V | - | Surface Mount | -65°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 6.8 V @ 15 A | |
Vishay General Semiconductor - Diodes Division
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5 A @ 100 V | - | Surface Mount | -65°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 820 mV @ 15 A | |
Vishay General Semiconductor - Diodes Division
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100 A @ 60 V | - | Surface Mount | -65°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 6.9 V @ 20 A | |
Vishay General Semiconductor - Diodes Division
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40 A @ 200 V | - | Surface Mount | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 1.23 V @ 2 A | |
Vishay General Semiconductor - Diodes Division
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50 A @ 200 V | - | Surface Mount | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 1.4 V @ 3 A | |
Vishay General Semiconductor - Diodes Division
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60 A @ 200 V | - | Surface Mount | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 1.2 V @ 3 A | |
Vishay General Semiconductor - Diodes Division
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150 A @ 200 V | - | Surface Mount | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 1.6 V @ 5 A | |
Vishay General Semiconductor - Diodes Division
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800 A @ 100 V | - | Surface Mount | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 790 mV @ 10 A | |
Vishay General Semiconductor - Diodes Division
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150 A @ 200 V | - | Surface Mount | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 1.7 V @ 10 A | |
Vishay General Semiconductor - Diodes Division
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150 A @ 200 V | - | Surface Mount | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 1.6 V @ 10 A | |
Vishay General Semiconductor - Diodes Division
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200 A @ 200 V | - | Surface Mount | -40°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Die | Schottky | 1.48 V @ 30 A | |
Vishay General Semiconductor - Diodes Division
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30 A @ 500 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 12 A | |
Vishay General Semiconductor - Diodes Division
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30 A @ 600 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 12 A | |
On Semiconductor
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3.5 A @ 100 V | 1 Pair Common Cathode | Through Hole | 175°C (Max) | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220 | Schottky | 730 mV @ 5 A | |
Vishay General Semiconductor - Diodes Division
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30 A @ 500 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 15 A | |
Vishay General Semiconductor - Diodes Division
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30 A @ 500 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 15 A | |
Vishay General Semiconductor - Diodes Division
|
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Price on request
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30 A @ 500 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 15 A | |
Vishay General Semiconductor - Diodes Division
|
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Price on request
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30 A @ 500 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 15 A | |
Vishay General Semiconductor - Diodes Division
|
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30 A @ 600 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 15 A | |
Vishay General Semiconductor - Diodes Division
|
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Price on request
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30 A @ 600 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 15 A | |
Vishay General Semiconductor - Diodes Division
|
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Price on request
Price and Stock
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30 A @ 600 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 15 A | |
Vishay General Semiconductor - Diodes Division
|
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Price on request
Price and Stock
on Request Send RFQ |
30 A @ 600 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 15 A | |
Vishay General Semiconductor - Diodes Division
|
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Price on request
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30 A @ 500 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 5 A | |
Vishay General Semiconductor - Diodes Division
|
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Price on request
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30 A @ 500 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 4 A | |
Vishay General Semiconductor - Diodes Division
|
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30 A @ 600 V | - | Surface Mount | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Standard | 1.75 V @ 4 A | |
Vishay General Semiconductor - Diodes Division
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10 A @ 100 V | 1 Pair Common Cathode | Through Hole | -40°C ~ 150°C | 25 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-3 | Standard | 1.1 V @ 5 A | |
Vishay General Semiconductor - Diodes Division
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10 A @ 50 V | 1 Pair Common Cathode | Through Hole | -65°C ~ 150°C | 30 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-3 | Standard | 1.2 V @ 20 A | |
Vishay General Semiconductor - Diodes Division
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10 A @ 100 V | 1 Pair Common Cathode | Through Hole | -65°C ~ 150°C | 30 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-3 | Standard | 1.2 V @ 20 A | |
Diodes Incorporated
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Taiwan Semiconductor
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100 A @ 100 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 950 mV @ 10 A | |
Taiwan Semiconductor
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100 A @ 150 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 980 mV @ 10 A | |
Taiwan Semiconductor
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100 A @ 200 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 980 mV @ 10 A | |
Taiwan Semiconductor
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100 A @ 100 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 950 mV @ 20 A | |
Taiwan Semiconductor
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100 A @ 150 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 1.23 V @ 20 A | |
Taiwan Semiconductor
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100 A @ 200 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 1.23 V @ 20 A | |
Taiwan Semiconductor
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100 A @ 100 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AB | Schottky | 950 mV @ 10 A | |
Taiwan Semiconductor
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100 A @ 150 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AB | Schottky | 980 mV @ 10 A | |
Taiwan Semiconductor
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100 A @ 200 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AB | Schottky | 980 mV @ 10 A | |
Taiwan Semiconductor
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100 A @ 100 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AB | Schottky | 950 mV @ 20 A | |
Taiwan Semiconductor
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100 A @ 150 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AB | Schottky | 1.05 V @ 20 A | |
Diodes Incorporated
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- | - | - | - | - | - | - | - | - | |
Taiwan Semiconductor
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100 A @ 200 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AB | Schottky | 1.05 V @ 20 A | |
Diodes Incorporated
|
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- | - | - | - | - | - | - | - | - |