What are Diodes - Rectifiers - Arrays ?
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Diode Configuration | Mounting Type | Operating Temperature | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Technology | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor
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10 A @ 800 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 80 ns | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AB | Standard | 1.7 V @ 8 A | |
Taiwan Semiconductor
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100 A @ 100 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 950 mV @ 10 A | |
Taiwan Semiconductor
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100 A @ 100 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 950 mV @ 10 A | |
Taiwan Semiconductor
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100 A @ 150 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 900 mV @ 10 A | |
Taiwan Semiconductor
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100 A @ 200 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 980 mV @ 10 A | |
Taiwan Semiconductor
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20 A @ 100 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 850 mV @ 10 A | |
Taiwan Semiconductor
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20 A @ 100 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 850 mV @ 10 A | |
Taiwan Semiconductor
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100 A @ 100 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 920 mV @ 7.5 A | |
Taiwan Semiconductor
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100 A @ 150 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 1.05 V @ 7.5 A | |
Taiwan Semiconductor
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100 A @ 150 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 1.05 V @ 7.5 A | |
Taiwan Semiconductor
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500 A @ 35 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 840 mV @ 15 A | |
Taiwan Semiconductor
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500 A @ 35 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 840 mV @ 15 A | |
Taiwan Semiconductor
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500 A @ 45 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 840 mV @ 15 A | |
Taiwan Semiconductor
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500 A @ 45 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 840 mV @ 15 A | |
Taiwan Semiconductor
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300 A @ 50 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 750 mV @ 7.5 A | |
Taiwan Semiconductor
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300 A @ 50 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 750 mV @ 7.5 A | |
Taiwan Semiconductor
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100 A @ 150 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Schottky | 1.02 V @ 25 A | |
Motorola Semicondutor
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5 A @ 100 V | 1 Pair Common Anode | Through Hole | -65°C ~ 175°C | 85 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Standard | 1.2 V @ 8 A | |
On Semiconductor
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1 mA @ 45 V | 1 Pair Common Cathode | Through Hole | -65°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-3P | Schottky | 800 mV @ 30 A | |
On Semiconductor
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100 A @ 600 V | 1 Pair Series Connection | Through Hole | -65°C ~ 150°C | 25 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-3 | Standard | 2.6 V @ 4 A | |
Infineon Technologies
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150 nA @ 25 V | 1 Pair Common Cathode | Surface Mount | 150°C (Max) | - | Small Signal =< 200mA (Io), Any Speed | PG-SOT323 | Schottky | 950 mV @ 35 mA | |
On Semiconductor
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6 A @ 200 V | 1 Pair Common Cathode | Through Hole | -65°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-3 | Standard | 1.2 V @ 6 A | |
On Semiconductor
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100 A @ 200 V | 1 Pair Common Cathode | Through Hole | -65°C ~ 150°C | 12 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-3 | Standard | 1.15 V @ 6 A | |
STMicroelectronics
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200 A @ 40 V | 1 Pair Common Cathode | Through Hole | 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220FPAB | Schottky | 530 mV @ 5 A | |
On Semiconductor
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1 A @ 200 V | 1 Pair Common Anode | Surface Mount | -55°C ~ 175°C | 75 ns | Fast Recovery =< 500ns, > 200mA (Io) | DPAK | Standard | 1.15 V @ 3 A | |
On Semiconductor
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PANJIT
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50 A @ 60 V | 1 Pair Common Cathode | Surface Mount | -55°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-263 | Schottky | 750 mV @ 5 A | |
On Semiconductor
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10 A @ 200 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-3 | Standard | 950 mV @ 8 A | |
On Semiconductor
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15 A @ 200 V | 1 Pair Common Cathode | Through Hole | -65°C ~ 150°C | 40 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-3 | Standard | 1.2 V @ 15 A | |
On Semiconductor
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10 A @ 600 V | 1 Pair Common Cathode | Through Hole | -65°C ~ 150°C | 90 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220F-3 | Standard | 2.2 V @ 20 A | |
On Semiconductor
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150 A @ 50 V | 1 Pair Common Cathode | Through Hole | -65°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-3 | Schottky | 950 mV @ 20 A | |
Vishay Dale
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200 A @ 45 V | 1 Pair Common Cathode | Surface Mount | -40°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | SlimDPAK | Schottky | 620 mV @ 10 A | |
Diodes Incorporated
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10 A @ 200 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 30 ns | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AB | Standard | 1.25 V @ 10 A | |
On Semiconductor
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10 A @ 300 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-3 | Standard | 1.3 V @ 8 A | |
On Semiconductor
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Diodes Incorporated
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10 A @ 200 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 30 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Standard | 1.25 V @ 16 A | |
Diodes Incorporated
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10 A @ 400 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | ITO220AB (Type WX2) | Standard | 1.3 V @ 5 A | |
Diodes Incorporated
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10 A @ 300 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | ITO220AB (Type WX) | Standard | 1.3 V @ 5 A | |
Diodes Incorporated
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10 A @ 400 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | ITO220AB (Type WX) | Standard | 1.3 V @ 5 A | |
On Semiconductor
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ROHM Semiconductor
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450 A @ 65 V | 1 Pair Common Cathode | Surface Mount | 150°C (Max) | 16.1 ns | Fast Recovery =< 500ns, > 200mA (Io) | LPDS | Schottky | 690 mV @ 15 A | |
Diotec Semiconductor
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120 A @ 45 V | 1 Pair Common Cathode | Surface Mount | -50°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-263AB (D虏PAK) | Schottky | 500 mV @ 10 A | |
Diodes Incorporated
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10 A @ 200 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 30 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO220AB (Type WX) | Standard | 1.1 V @ 5 A | |
Diodes Incorporated
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10 A @ 300 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO220AB (Type WX) | Standard | 1.3 V @ 5 A | |
NTE Electronics
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500 A @ 200 V | 2 Independent | Through Hole | -65°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220 | Schottky | 920 mV @ 5 A | |
Texas Instruments
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Diodes Incorporated
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10 A @ 400 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220AB | Standard | 1.5 V @ 16 A | |
ROHM Semiconductor
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200 A @ 65 V | 1 Pair Common Cathode | Surface Mount | 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-252 | Schottky | 630 mV @ 10 A | |
Harris Semiconductor
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500 A @ 100 V | 1 Pair Common Cathode | Through Hole | -65°C ~ 175°C | 30 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220 | Avalanche | 975 mV @ 8 A | |
On Semiconductor
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