What are Diodes - Rectifiers - Arrays ?
Diodes - Rectifiers - Arrays are semiconductor devices that allow current to flow in one direction while blocking it in the opposite direction. They are commonly used in applications such as power supplies, signal processing, and electronic circuit protection. Important specifications for selection include Current, which determines the maximum load the diode can handle; Reverse Recovery Time (trr), which affects switching speed and efficiency; and Operating Temperature, which ensures reliability under varying environmental conditions. Procurement teams should validate lifecycle status and consider alternate-source options to mitigate sourcing risks.
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| Part & Mfr | Total Stock | Pricing & RFQ | Current | Diode Configuration | Mounting Type | Operating Temperature | Reverse Recovery Time (trr) | Speed | Supplier Device Package | Technology | Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Incorporated
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500 A @ 100 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-3 | Super Barrier | 840 mV @ 30 A | |
IXYS
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1 A @ 300 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 175°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-220-3 | Standard | 1.27 V @ 10 A | |
ROHM Semiconductor
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30 A @ 150 V | 1 Pair Common Cathode | Through Hole | 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-220FN | Schottky | 870 mV @ 20 A | |
Vishay Dale
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3 mA @ 45 V | 1 Pair Common Cathode | Through Hole | 200°C (Max) | - | Fast Recovery =< 500ns, > 200mA (Io) | ITO-220AB | Schottky | 640 mV @ 30 A | |
Toshiba
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30 A @ 650 V | 1 Pair Common Cathode | Through Hole | 175°C | 0 ns | No Recovery Time > 500mA (Io) | TO-247 | SiC (Silicon Carbide) Schottky | 1.6 V @ 6 A | |
Microchip Technology
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250 A @ 300 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 25 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-247 [B] | Standard | 1.4 V @ 30 A | |
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Microchip Technology
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250 A @ 1000 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 175°C | 290 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-247 [B] | Standard | 2.3 V @ 30 A | |
IXYS
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1 A @ 400 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 175°C | 45 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-3P | Standard | 1.41 V @ 30 A | |
IXYS
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200 A @ 200 V | 1 Pair Common Cathode | Through Hole | -40°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | ISOPLUS247聶 | Standard | 1.1 V @ 30 A | |
IXYS
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100 A @ 600 V | 1 Pair Series Connection | Through Hole | -55°C ~ 175°C | 25 ns | Fast Recovery =< 500ns, > 200mA (Io) | ISOPLUS220聶 | Standard | 2.04 V @ 15 A | |
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IXYS
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3 mA @ 1600 V | 1 Pair Series Connection | Through Hole | -40°C ~ 175°C | - | Standard Recovery >500ns, > 200mA (Io) | ISOPLUS247聶 | Standard | 1.23 V @ 40 A | |
IXYS
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50 A @ 600 V | 1 Pair Common Cathode | Through Hole | -55°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-247AD | Standard | 2.36 V @ 30 A | |
SMC Diode Solutions
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5 mA @ 45 V | 1 Pair Common Cathode | Chassis Mount | -55°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | PRM2 | Schottky | 740 mV @ 80 A | |
Microchip Technology
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25 A @ 600 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 160 ns | Fast Recovery =< 500ns, > 200mA (Io) | ISOTOP庐 | Standard | 2.2 V @ 100 A | |
Microchip Technology
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500 A @ 200 V | 2 Independent | Chassis Mount | -55°C ~ 150°C | 55 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOT-227 (ISOTOP庐) | Schottky | 850 mV @ 30 A | |
IXYS
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750 A @ 1000 V | 2 Independent | Chassis Mount | -40°C ~ 150°C | 50 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOT-227B | Standard | 2.4 V @ 30 A | |
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Microchip Technology
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250 A @ 1200 V | 2 Independent | Chassis Mount | - | 370 ns | Fast Recovery =< 500ns, > 200mA (Io) | ISOTOP庐 | Standard | 2.5 V @ 30 A | |
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Microchip Technology
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1 mA @ 200 V | 2 Independent | Chassis Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | SOT-227 (ISOTOP庐) | Schottky | 900 mV @ 60 A | |
IXYS
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2 mA @ 600 V | 1 Pair Series Connection | Chassis Mount | -40°C ~ 150°C | 300 ns | Fast Recovery =< 500ns, > 200mA (Io) | TO-240AA | Standard | 1.55 V @ 100 A | |
SemiQ
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125 A @ 650 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227 | SiC (Silicon Carbide) Schottky | 1.6 V @ 50 A | |
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IXYS
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650 A @ 600 V | 2 Independent | Chassis Mount | -40°C ~ 150°C | 35 ns | Fast Recovery =< 500ns, > 200mA (Io) | SOT-227B | Standard | 2.01 V @ 60 A | |
Micro Commercial Co.
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5 mA @ 1600 V | 1 Pair Common Cathode | Chassis Mount | -40°C ~ 150°C | - | Standard Recovery >500ns, > 200mA (Io) | D1 | Standard | 1.45 V @ 200 A | |
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IXYS
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200 A @ 1600 V | 1 Pair Series Connection | Chassis Mount | -40°C ~ 150°C | - | Standard Recovery >500ns, > 200mA (Io) | TO-240AA | Standard | 1.18 V @ 110 A | |
Powerex Inc.
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12 mA @ 2000 V | 1 Pair Series Connection | Chassis Mount | -40°C ~ 150°C | - | Standard Recovery >500ns, > 200mA (Io) | POW-R-BLOK聶 Module | Standard | 1.65 V @ 330 A | |
Vishay Dale
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10 mA @ 1200 V | 1 Pair Common Cathode | Chassis Mount | -40°C ~ 150°C | - | Standard Recovery >500ns, > 200mA (Io) | ADD-A-PAK庐 | Standard | 1200 V | |
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Powerex Inc.
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12 mA @ 2400 V | 1 Pair Series Connection | Chassis Mount | -40°C ~ 150°C | - | Standard Recovery >500ns, > 200mA (Io) | POW-R-BLOK聶 Module | Standard | 1.65 V @ 330 A | |
Microchip Technology
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200 A @ 1200 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227 (ISOTOP庐) | SiC (Silicon Carbide) Schottky | 1.8 V @ 30 A | |
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Microchip Technology
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200 A @ 700 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227 (ISOTOP庐) | SiC (Silicon Carbide) Schottky | 1.8 V @ 50 A | |
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Microchip Technology
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200 A @ 700 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227 (ISOTOP庐) | SiC (Silicon Carbide) Schottky | 1.8 V @ 50 A | |
Vishay Dale
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3 mA @ 100 V | 1 Pair Common Cathode | Chassis Mount | -55°C ~ 175°C | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-244AB | Schottky | 860 mV @ 100 A | |
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SemiQ
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100 A @ 1200 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227 | SiC (Silicon Carbide) Schottky | 1.7 V @ 50 A | |
Vishay Dale
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6 mA @ 150 V | 1 Pair Common Cathode | Chassis Mount | - | - | Fast Recovery =< 500ns, > 200mA (Io) | TO-244AB | Schottky | 1.46 V @ 400 A | |
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Microchip Technology
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200 A @ 1200 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227 (ISOTOP庐) | SiC (Silicon Carbide) Schottky | 1.8 V @ 50 A | |
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Microchip Technology
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200 A @ 1200 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227 (ISOTOP庐) | SiC (Silicon Carbide) Schottky | 1.8 V @ 50 A | |
DComponents
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- | - | Surface Mount | 150°C | - | - | - | - | 1 V @ 2 A | |
Vishay Dale
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20 mA @ 1400 V | 1 Pair Common Cathode | Chassis Mount | -40°C ~ 150°C | - | Standard Recovery >500ns, > 200mA (Io) | INT-A-PAK | Standard | 1600 V | |
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Microchip Technology
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400 A @ 700 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227 (ISOTOP庐) | SiC (Silicon Carbide) Schottky | 1.8 V @ 100 A | |
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Microchip Technology
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400 A @ 700 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227 (ISOTOP庐) | SiC (Silicon Carbide) Schottky | 1.8 V @ 100 A | |
IXYS
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100 A @ 1200 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227B - miniBLOC | SiC (Silicon Carbide) Schottky | 1.8 V @ 40 A | |
GeneSiC Semiconductor
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1 mA @ 20 V | 1 Pair Common Cathode | Chassis Mount | -55°C ~ 150°C | - | Fast Recovery =< 500ns, > 200mA (Io) | Three Tower | Schottky | 880 mV @ 100 A | |
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Microchip Technology
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400 A @ 1200 V | 2 Independent | Chassis Mount | -55°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227 (ISOTOP庐) | SiC (Silicon Carbide) Schottky | 1.8 V @ 100 A | |
Infineon Technologies
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1 mA @ 2200 V | 1 Pair Series Connection | Chassis Mount | -40°C ~ 135°C | - | Standard Recovery >500ns, > 200mA (Io) | BG-PB50SB-1 | Standard | 2200 V | |
SENSATA
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90A (DC) | 1 Pair Series Connection | Chassis Mount | -40°C ~ 125°C | - | Standard Recovery >500ns, > 200mA (Io) | Module | Standard | 1.4 V @ 270 A | |
Infineon Technologies
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20 mA @ 1600 V | 1 Pair Common Cathode | Chassis Mount | -40°C ~ 150°C | - | Standard Recovery >500ns, > 200mA (Io) | Module | Standard | 1.4 V @ 300 A | |
DComponents
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- | - | Surface Mount | 150°C | - | - | SOT-23 | - | 1.25 V @ 150 mA | |
Infineon Technologies
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5 mA @ 1600 V | 3 Independent | Chassis Mount | 150°C (Max) | - | Standard Recovery >500ns, > 200mA (Io) | AG-ISOPACK-1 | Standard | 1.44 V @ 100 A | |
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IXYS
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500 A @ 1200 V | 2 Independent | Chassis Mount | -40°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | SOT-227B | SiC (Silicon Carbide) Schottky | 1.8 V @ 50 A | |
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Microchip Technology
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600 A @ 1200 V | 1 Pair Common Cathode | Chassis Mount | -40°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | D1P | SiC (Silicon Carbide) Schottky | 1.8 V @ 150 A | |
Infineon Technologies
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10 mA @ 1600 V | 3 Independent | Chassis Mount | -40°C ~ 150°C | - | Standard Recovery >500ns, > 200mA (Io) | Module | Standard | 1.61 V @ 300 A | |
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Microchip Technology
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800 A @ 1200 V | 1 Pair Series Connection | Chassis Mount | -40°C ~ 175°C | 0 ns | No Recovery Time > 500mA (Io) | D1P | SiC (Silicon Carbide) Schottky | 1.8 V @ 200 A |
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