Part Number: TW070J120B,S1Q
Manufacturer: Toshiba
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Product URL: https://distyparts.com/product/tw070j120b-s1q
RFQ URL: https://distyparts.com/product/tw070j120b-s1q#rfq
Image URL: https://static.distyparts.com/disty-files/images/83/54/34/8354342-2SA1943N_S1ES_-ND.jpg

Summary:
TW070J120B,S1Q is an electronic component listed on DistyParts. This part is manufactured by Toshiba and is available through multiple distributors. Buyers can review stock availability, pricing, technical specifications, media, and datasheet information, then submit an RFQ from the product page.

Description:
TW070J120B,S1Q is a transistors - fets, mosfets - single from Toshiba. DistyParts aggregates this part with supplier inventory, pricing visibility, technical attributes, and procurement support for buyers searching electronic components and distributor stock.

Specifications:
Current: 36A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 20V
FET Feature: Standard
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Power Dissipation (Max): 272W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
Supplier Device Package: TO-3P(N)
Technology: SiCFET (Silicon Carbide)
Vgs (Max): ±25V, -10V
Vgs(th) (Max) @ Id: 5.8V @ 20mA

Distributor Offers:

Inventory Summary:
Distributor Count: 0
Total Stock: 0
Pricing Available: No
Datasheet Available: No
Image Available: Yes
Specifications Available: Yes

Related Pages:
Manufacturer Page: https://distyparts.com/manufacturer/toshiba
Category Page: https://distyparts.com/category/discrete-semiconductor-products/transistors-fets-mosfets-single

Canonical URL:
https://distyparts.com/product/tw070j120b-s1q