Part Number: TPN4R712MD,L1Q
Manufacturer: Toshiba
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Product URL: https://distyparts.com/product/tpn4r712md-l1q
RFQ URL: https://distyparts.com/product/tpn4r712md-l1q#rfq
Image URL: https://static.distyparts.com/disty-files/images/TP/H1/10/TPH11006NLLQDKR-ND.jpg

Summary:
TPN4R712MD,L1Q is an electronic component listed on DistyParts. This part is manufactured by Toshiba and is available through multiple distributors. Buyers can review stock availability, pricing, technical specifications, media, and datasheet information, then submit an RFQ from the product page.

Description:
TPN4R712MD,L1Q is a transistors - fets, mosfets - single from Toshiba. DistyParts aggregates this part with supplier inventory, pricing visibility, technical attributes, and procurement support for buyers searching electronic components and distributor stock.

Specifications:
Current: 36A (Tc)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1.2V @ 1mA

Distributor Offers:
1. Braun Electronic Components | Stock: 2452 | Availability: In Stock

Inventory Summary:
Distributor Count: 1
Total Stock: 2452
Pricing Available: No
Datasheet Available: No
Image Available: Yes
Specifications Available: Yes

Related Pages:
Manufacturer Page: https://distyparts.com/manufacturer/toshiba
Category Page: https://distyparts.com/category/discrete-semiconductor-products/transistors-fets-mosfets-single

Canonical URL:
https://distyparts.com/product/tpn4r712md-l1q