Product Identity:
Part Number: STP10NM65N
Manufacturer: STMicroelectronics
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Package: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole

Summary:
MOSFET N-CH 650V 9A TO220AB

Specifications:
- Current: 9 A (Tc)
- Drain to Source Voltage (Vdss): 650 V
- Drive Voltage (Max Rds On, Min Rds On): 10 V
- FET Type: N-Channel
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
- Mounting Type: Through Hole
- Operating Temperature: -55 °C to 150 °C (TJ)
- Power Dissipation (Max): 90 W (Tc)
- Rds On (Max) @ Id, Vgs: 480 mOhm @ 4.5 A, 10 V
- Supplier Device Package: TO-220
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±25 V
- Vgs(th) (Max) @ Id: 4 V @ 250 µA

Availability and Pricing:
- Stock Status: Stock on Request
- Distributor Count: 0
- Total Stock: 0
- Pricing Available: No

Compliance:
- RoHS Status: RoHS3 Compliant
- REACH Status: REACH Unaffected
- Moisture Sensitivity Level: 1 Unlimited

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