# SIZ342JT-T1-GE3 - Vishay MOSFET

## Product Summary

The Vishay SIZ342JT-T1-GE3 is an N-Channel MOSFET designed for power applications. It offers a 30V drain-source breakdown voltage and a continuous drain current of 30A.

## Product Information

| Field | Value |
| --- | --- |
| Part Number | SIZ342JT-T1-GE3 |
| Manufacturer | Vishay |
| Product Type | MOSFET |
| Series | SIZ |
| Category | Uncategorized |
| Subcategory | Single MOSFETs |

## Description

The Vishay SIZ342JT-T1-GE3 is a high-performance N-Channel MOSFET from the SIZ series, utilizing TrenchFET technology. It features a drain-source breakdown voltage of 30V and a continuous drain current capability of 30A. The MOSFET exhibits a low on-resistance of 8.4 mOhms at the drain-source, with a gate threshold voltage of 1.2V.

This component operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 16.7W. It is configured as a dual-channel device in an enhancement mode. The MOSFET is supplied in a PowerPAIR-3x3-8 package, suitable for surface-mount (SMD/SMT) applications, and is typically supplied on a reel.

Key electrical characteristics include a gate charge of 20 nC, a minimum forward transconductance of 37 S, and switching times including a fall time of 10 ns, rise time of 50 ns, typical turn-on delay of 15 ns, and typical turn-off delay of 16 ns. The Vishay SIZ342JT-T1-GE3 is a robust solution for various power management and switching applications.

## Key Specifications

| Specification | Value |
| --- | --- |
| Configuration | Dual |
| Failure Rate | SIZ |
| Gate Charge | 20 nC |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | PowerPAIR-3x3-8 |
| Power Dissipation | 16.7 W |
| Technology | Si |

## Availability and Pricing

| Field | Value |
| --- | --- |
| Stock Status | In Stock |
| Distributor Count | 1 |
| Total Stock | 900 |
| Pricing Available | No |

## Distributor Offers

| Distributor | Stock | Unit Price | MOQ | Lead Time | Last Updated |
| --- | --- | --- | --- | --- | --- |
| PROSOFT ELECTRONICS | 900 |  |  |  |  |

## Features

- N-Channel MOSFET with 30V Vds.
- Continuous drain current of 30A.
- Low on-resistance of 8.4 mOhms.
- TrenchFET technology for efficiency.
- Surface-mount PowerPAIR-3x3-8 package.

## Applications

- Suitable for power switching applications.
- Ideal for DC-DC converters.
- Used in power management circuits.
- Applicable in motor control systems.

## Compliance

| Field | Value |
| --- | --- |
| RoHS Status | RoHS3 Compliant |
| REACH Status | REACH Unaffected |
| Moisture Sensitivity Level | 1 Unlimited |

## Documents and Media

- Product Page: https://distyparts.com/product/siz342jt-t1-ge3
- RFQ URL: https://distyparts.com/product/siz342jt-t1-ge3#rfq

## FAQs

### What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 30 V.

### What is the continuous drain current?

The continuous drain current is 30 A.

### What is the typical on-resistance?

The typical on-resistance is 8.4 mOhms.

### What is the gate threshold voltage?

The gate threshold voltage is 1.2 V.

### What is the operating temperature range?

The operating temperature range is -55 C to +150 C.

### What type of package is this MOSFET in?

This MOSFET is in a PowerPAIR-3x3-8 package.

### How is this MOSFET mounted?

This MOSFET is surface-mount (SMD/SMT).

## Related Pages

- Manufacturer: https://distyparts.com/manufacturer/vishay
- Category: https://distyparts.com/category/uncategorized/new-products
- Product Page: https://distyparts.com/product/siz342jt-t1-ge3
- Markdown File: https://distyparts.com/product/siz342jt-t1-ge3.md
- TXT File: https://distyparts.com/product/siz342jt-t1-ge3.txt