# SIHB15N60E-GE3 - Vishay N-Channel Power MOSFET

## Product Summary

The Vishay SIHB15N60E-GE3 is an N-Channel Power MOSFET designed for high-efficiency applications. It offers a 600V drain-source voltage and a 15A continuous drain current.

## Product Information

| Field | Value |
| --- | --- |
| Part Number | SIHB15N60E-GE3 |
| Manufacturer | Vishay |
| Product Type | N-Channel Power MOSFET |
| Series | E Series |
| Category | Discrete Semiconductor Products |
| Subcategory | Power MOSFET |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D²PAK (TO-263) |
| Mounting Type | Surface Mount |

## Description

The Vishay SIHB15N60E-GE3 is an N-Channel Power MOSFET from Vishay's E Series, designed for applications requiring efficient power switching. This device features a maximum drain-source voltage of 600V and a continuous drain current rating of 15A at 25°C case temperature.

Key electrical characteristics include a maximum on-state resistance (Rds On) of 0.28Ω at 8A and 10V gate-source voltage, and a maximum gate charge (Qg) of 78nC at 10V. The MOSFET operates within a junction temperature range of -55°C to +150°C.

Designed for surface mounting, the SIHB15N60E-GE3 comes in a TO-263-3, D²Pak package. Its features, such as low figure-of-merit and reduced switching losses, make it suitable for various industrial and power supply applications.

Applications include server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), and industrial applications like welding and induction heating.

## Key Specifications

| Specification | Value |
| --- | --- |
| Channel Type | N-Channel |
| Current | 15 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 78nC |
| Halogen Free | Halogen-free |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | -55 °C to 150 °C (TJ) |
| Power Dissipation (Max) | 180 W |
| Rds On (Max) @ Id, Vgs | 0.28 Ω |
| Supplier Device Package | D²PAK (TO-263) |
| Supplier Package | D²PAK (TO-263) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30 V |
| Vgs(th) (Max) @ Id | 4 V |

## Availability and Pricing

| Field | Value |
| --- | --- |
| Stock Status | In Stock |
| Distributor Count | 1 |
| Total Stock | 238 |
| Price | $0.99 |
| Pricing Available | Yes |

## Estimated Pricing

| Quantity | Price Range |
| ---: | ---: |
| 1+ | $0.99 |

Estimated pricing is for guidance only and is not a live distributor offer.

## Distributor Offers

| Distributor | Stock | Unit Price | MOQ | Lead Time | Last Updated |
| --- | --- | --- | --- | --- | --- |
| Smaxon Electronics | 238 |  |  |  |  |

## Features

- 600V drain-source voltage rating.
- 15A continuous drain current.
- 0.28Ω maximum Rds On.
- 78nC maximum gate charge.
- TO-263 surface mount package.

## Applications

- Server and telecom power supplies.
- Switch mode power supplies (SMPS).
- Power factor correction (PFC).
- Industrial applications.
- Solar (PV inverters).

## Compliance

| Field | Value |
| --- | --- |
| RoHS Status | RoHS3 Compliant |
| REACH Status | REACH Unaffected |
| Lead Free | Lead (Pb)-free |
| Moisture Sensitivity Level | 1 Unlimited |
| Halogen Free | Halogen-free |

## Documents and Media

- Datasheet: https://static.distyparts.com/disty-files/datasheets/84/22/67/8422677-SIHB15N60E-GE3-ND.pdf
- Image: https://static.distyparts.com/disty-files/images/IR/F5/40/IRF540STRLPBFDKR-ND.jpg
- Product Page: https://distyparts.com/product/sihb15n60e-ge3
- RFQ URL: https://distyparts.com/product/sihb15n60e-ge3#rfq

## FAQs

### What is the maximum drain-source voltage for the SIHB15N60E-GE3?

The maximum drain-source voltage is 600V.

### What is the maximum continuous drain current?

The maximum continuous drain current is 15A at 25°C case temperature.

### What is the Rds On (Max) for this MOSFET?

The Rds On (Max) is 0.28Ω at 8A drain current and 10V gate-source voltage.

### What is the typical gate charge (Qg) at Vgs = 10V?

The typical gate charge (Qg) is 78nC at 10V gate-source voltage.

### What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

### What package type is the SIHB15N60E-GE3 supplied in?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package for surface mounting.

### Is this product RoHS compliant?

Yes, this product is RoHS3 Compliant.

## Related Pages

- Manufacturer: https://distyparts.com/manufacturer/vishay
- Category: https://distyparts.com/category/discrete-semiconductor-products/transistors-fets-mosfets-single
- Product Page: https://distyparts.com/product/sihb15n60e-ge3
- Markdown File: https://distyparts.com/product/sihb15n60e-ge3.md
- TXT File: https://distyparts.com/product/sihb15n60e-ge3.txt