Product Identity:
Part Number: SCTW60N120G2
Manufacturer: STMicroelectronics
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Package: TO-247-3
Supplier Device Package: HiP247™
Mounting Type: Through Hole

Summary:
DISCRETE

Specifications:
- Current: 60 A (Tc)
- Drain to Source Voltage (Vdss): 1200 V
- Drive Voltage (Max Rds On, Min Rds On): 18 V
- FET Type: N-Channel
- Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 8 V
- Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
- Mounting Type: Through Hole
- Operating Temperature: -55 °C to 200 °C (TJ)
- Power Dissipation (Max): 389 W (Tc)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 30 A, 18 V
- Supplier Device Package: HiP247™
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): +18 V, -5 V
- Vgs(th) (Max) @ Id: 5 V @ 1 mA

Availability and Pricing:
- Stock Status: Stock on Request
- Distributor Count: 0
- Total Stock: 0
- Pricing Available: No

Compliance:
- RoHS Status: RoHS3 Compliant
- REACH Status: REACH Unaffected
- Moisture Sensitivity Level: 1 Unlimited

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