Part Number: SCT2H12NYTB
Manufacturer: ROHM Semiconductor
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Product URL: https://distyparts.com/product/sct2h12nytb
RFQ URL: https://distyparts.com/product/sct2h12nytb#rfq
Image URL: https://static.distyparts.com/disty-files/images/SC/T2/H1/SCT2H12NYTBDKR-ND.jpg

Summary:
SCT2H12NYTB is an electronic component listed on DistyParts. This part is manufactured by ROHM Semiconductor and is available through multiple distributors. Buyers can review stock availability, pricing, technical specifications, media, and datasheet information, then submit an RFQ from the product page.

Description:
SCT2H12NYTB is a transistors - fets, mosfets - single from ROHM Semiconductor. DistyParts aggregates this part with supplier inventory, pricing visibility, technical attributes, and procurement support for buyers searching electronic components and distributor stock.

Specifications:
Current: 4A (Tc)
Drain to Source Voltage (Vdss): 1700 V
Drive Voltage (Max Rds On, Min Rds On): 18V
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 44W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
Supplier Device Package: TO-268
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +22V, -6V
Vgs(th) (Max) @ Id: 4V @ 410µA

Distributor Offers:

Inventory Summary:
Distributor Count: 0
Total Stock: 0
Pricing Available: No
Datasheet Available: No
Image Available: Yes
Specifications Available: Yes

Related Pages:
Manufacturer Page: https://distyparts.com/manufacturer/rohm-semiconductor
Category Page: https://distyparts.com/category/discrete-semiconductor-products/transistors-fets-mosfets-single

Canonical URL:
https://distyparts.com/product/sct2h12nytb