Product Identity:
Part Number: R6520ENZ4C13
Manufacturer: ROHM Semiconductor
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Package: TO-247-3
Supplier Device Package: TO-247G
Mounting Type: Through Hole

Summary:
650V 20A TO-247, LOW-NOISE POWER

Specifications:
- Current: 20 A (Tc)
- Drain to Source Voltage (Vdss): 650 V
- Drive Voltage (Max Rds On, Min Rds On): 10 V
- FET Type: N-Channel
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- Mounting Type: Through Hole
- Operating Temperature: 150 °C (TJ)
- Power Dissipation (Max): 231 W (Tc)
- Rds On (Max) @ Id, Vgs: 205 mOhm @ 9.5 A, 10 V
- Supplier Device Package: TO-247G
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20 V
- Vgs(th) (Max) @ Id: 4 V @ 630 µA

Availability and Pricing:
- Stock Status: Stock on Request
- Distributor Count: 0
- Total Stock: 0
- Pricing Available: No

Compliance:
- RoHS Status: RoHS3 Compliant
- REACH Status: REACH Unaffected
- Moisture Sensitivity Level: 1 Unlimited

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