Product Identity:
Part Number: R6511KNXC7G
Manufacturer: ROHM Semiconductor
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Package: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Mounting Type: Through Hole

Summary:
650V 11A TO-220FM, HIGH-SPEED SW

Specifications:
- Current: 11 A (Ta)
- Drain to Source Voltage (Vdss): 650 V
- Drive Voltage (Max Rds On, Min Rds On): 10 V
- FET Type: N-Channel
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
- Mounting Type: Through Hole
- Operating Temperature: 150 °C (TJ)
- Power Dissipation (Max): 53 W (Tc)
- Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.8 A, 10 V
- Supplier Device Package: TO-220FM
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20 V
- Vgs(th) (Max) @ Id: 5 V @ 320 µA

Availability and Pricing:
- Stock Status: Stock on Request
- Distributor Count: 0
- Total Stock: 0
- Pricing Available: No

Compliance:
- RoHS Status: RoHS3 Compliant
- REACH Status: REACH Unaffected
- Moisture Sensitivity Level: 1 Unlimited

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