Product Identity:
Part Number: IPI70R950CE
Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Package: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: PG-TO262-3-1
Mounting Type: Through Hole

Summary:
POWER FIELD-EFFECT TRANSISTOR

Specifications:
- Current: 7.4 A (Tc)
- Drain to Source Voltage (Vdss): 700 V
- Drive Voltage (Max Rds On, Min Rds On): 10 V
- FET Type: N-Channel
- Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
- Mounting Type: Through Hole
- Operating Temperature: -40 °C to 150 °C (TJ)
- Power Dissipation (Max): 68 W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5 A, 10 V
- Supplier Device Package: PG-TO262-3-1
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20 V
- Vgs(th) (Max) @ Id: 3.5 V @ 150 mA

Availability and Pricing:
- Stock Status: Stock on Request
- Distributor Count: 0
- Total Stock: 0
- Pricing Available: No

Compliance:
- RoHS Status: RoHS3 Compliant
- REACH Status: REACH Unaffected
- Moisture Sensitivity Level: 1 Unlimited

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