Product Identity:
Part Number: IPD80R2K8CEBTMA1
Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-11
Mounting Type: Surface Mount

Summary:
MOSFET N-CH 800V 1.9A TO252-3

Specifications:
- Current: 1.9 A (Tc)
- Drain to Source Voltage (Vdss): 800 V
- Drive Voltage (Max Rds On, Min Rds On): 10 V
- FET Type: N-Channel
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
- Mounting Type: Surface Mount
- Operating Temperature: -55 °C to 150 °C (TJ)
- Power Dissipation (Max): 42 W (Tc)
- Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.1 A, 10 V
- Supplier Device Package: PG-TO252-3-11
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20 V
- Vgs(th) (Max) @ Id: 3.9 V @ 120 µA

Availability and Pricing:
- Stock Status: Stock on Request
- Distributor Count: 0
- Total Stock: 0
- Pricing Available: No

Compliance:
- RoHS Status: RoHS3 Compliant
- REACH Status: REACH Unaffected
- Moisture Sensitivity Level: 1 Unlimited

Documents and Media:
- Datasheet: https://static.distyparts.com/disty-files/datasheets/21/56/-I/2156-IPD80R2K8CEATMA1-ND.pdf
- Product Page: https://distyparts.com/product/ipd80r2k8cebtma1
- RFQ URL: https://distyparts.com/product/ipd80r2k8cebtma1#rfq

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