Product Identity:
Part Number: IMW65R057M1HXKSA1
Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Package: TO-247-3
Supplier Device Package: PG-TO247-3-41
Mounting Type: Through Hole

Summary:
SILICON CARBIDE MOSFET, PG-TO247

Specifications:
- Current: 35 A (Tc)
- Drain to Source Voltage (Vdss): 650 V
- Drive Voltage (Max Rds On, Min Rds On): 18 V
- FET Type: N-Channel
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
- Mounting Type: Through Hole
- Operating Temperature: -55 °C to 175 °C (TJ)
- Power Dissipation (Max): 133 W (Tc)
- Rds On (Max) @ Id, Vgs: 74 mOhm @ 16.7 A, 18 V
- Supplier Device Package: PG-TO247-3-41
- Technology: SiCFET (Silicon Carbide)
- Vgs (Max): +20 V, -2 V
- Vgs(th) (Max) @ Id: 5.7 V @ 5 mA

Availability and Pricing:
- Stock Status: Stock on Request
- Distributor Count: 0
- Total Stock: 0
- Pricing Available: No

Compliance:
- RoHS Status: RoHS3 Compliant
- REACH Status: REACH Unaffected
- Moisture Sensitivity Level: 1 Unlimited

Documents and Media:
- Datasheet: https://static.distyparts.com/disty-files/datasheets/84/15/46/8415462-448-IMW65R057M1HXKSA1-ND.pdf
- Image: https://static.distyparts.com/disty-files/images/84/15/44/8415442-448-IMW65R083M1HXKSA1-ND.jpg
- Product Page: https://distyparts.com/product/imw65r057m1hxksa1
- RFQ URL: https://distyparts.com/product/imw65r057m1hxksa1#rfq

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- Manufacturer: https://distyparts.com/manufacturer/infineon-technologies
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