Product Identity:
Part Number: APT34F100B2
Manufacturer: Microchip Technology
Category: Discrete Semiconductor Products
Subcategory: Transistors - FETs, MOSFETs - Single
Package: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole

Summary:
MOSFET N-CH 1000V 35A T-MAX

Specifications:
- Current: 35 A (Tc)
- Drain to Source Voltage (Vdss): 1000 V
- Drive Voltage (Max Rds On, Min Rds On): 10 V
- FET Type: N-Channel
- Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
- Mounting Type: Through Hole
- Operating Temperature: -55 °C to 150 °C (TJ)
- Power Dissipation (Max): 1135 W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 18 A, 10 V
- Supplier Device Package: T-MAX™ [B2]
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±30 V
- Vgs(th) (Max) @ Id: 5 V @ 2.5 mA

Availability and Pricing:
- Stock Status: Stock on Request
- Distributor Count: 0
- Total Stock: 0
- Pricing Available: No

Compliance:
- RoHS Status: RoHS3 Compliant
- REACH Status: REACH Unaffected
- Moisture Sensitivity Level: 1 Unlimited

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