Product Identity:
Part Number: 2N6796
Manufacturer: On Semiconductor
Canonical Name: 2N6796 N-Channel MOSFET
Product Type: N-Channel MOSFET
Category: Uncategorized
Subcategory: N-Channel
Mounting Type: Through Hole

Summary:
The 2N6796 is an N-Channel MOSFET from On Semiconductor, designed for high-reliability applications. It features a 100V drain-source voltage and a TO-205 package.

Description:
The 2N6796 is a high-reliability N-Channel MOSFET manufactured by On Semiconductor. This component is designed for demanding applications requiring robust performance and stability.

Key electrical characteristics include a maximum drain-source voltage of 100V and a continuous drain current of up to 8.0A at 25°C case temperature. The gate-source voltage range is ±20V, with a threshold voltage typically between 2.0V and 4.0V. Static drain-source on-state resistance is specified as low as 0.18 Ω at 10V gate drive and 5.0A drain current.

Dynamic characteristics are also well-defined, with typical values for gate charge (Qg) of 6.34 nC and gate-to-drain charge (Qgd) of 16.59 nC. Switching performance includes a turn-on delay of 30ns and a fall time of 45ns under specified test conditions.

Packaged in a TO-205 case, this MOSFET is suitable for through-hole mounting. The operating and storage temperature range is -55°C to +150°C, ensuring operation in a wide variety of environmental conditions. It is available in RoHS3 compliant and non-RoHS versions.

Availability and Pricing:
- Stock Status: In Stock
- Distributor Count: 1
- Total Stock: 5
- Price: $0.99
- Pricing Available: Yes

Estimated Pricing:
- 1+: $0.99

Estimated pricing is for guidance only and is not a live distributor offer.

Distributor Offers:
- Distributor: Partservice
  Stock: 5

Features:
- 100V drain-source breakdown voltage.
- 8.0A maximum drain current.
- Low on-resistance of 0.18 Ω typical.
- TO-205 package for through-hole mounting.
- Wide operating temperature range.

Applications:
- Suitable for high-reliability applications.
- Power switching circuits.
- General purpose discrete component.
- Industrial control systems.

Compliance:
- RoHS Status: RoHS3 Compliant
- REACH Status: REACH Unaffected
- Moisture Sensitivity Level: 1 Unlimited

Documents and Media:
- Datasheet: https://static.distyparts.com/disty-files/datasheets/b2/49/60/2N6796.pdf
- Product Page: https://distyparts.com/product/2n6796-5
- RFQ URL: https://distyparts.com/product/2n6796-5#rfq

FAQs:
Q: What is the maximum drain-source voltage for the 2N6796 MOSFET?
A: The maximum drain-source voltage for the 2N6796 is 100V.

Q: What is the typical on-state resistance of the 2N6796 MOSFET?
A: The typical on-state resistance (RDS(on)) is 0.18 Ω at 10V gate drive and 5.0A drain current.

Q: What is the operating temperature range for the 2N6796 MOSFET?
A: The operating and storage temperature range is -55°C to +150°C.

Q: What package type is the 2N6796 MOSFET supplied in?
A: The 2N6796 MOSFET is supplied in a TO-205 case.

Q: Is the 2N6796 MOSFET RoHS compliant?
A: The product is listed as RoHS3 Compliant.

Q: What is the Moisture Sensitivity Level (MSL) for the 2N6796 MOSFET?
A: The Moisture Sensitivity Level (MSL) is 1 Unlimited.

Related Pages:
- Manufacturer: https://distyparts.com/manufacturer/on-semiconductor
- Category: https://distyparts.com/category/uncategorized/new-products
- Product Page: https://distyparts.com/product/2n6796-5
- Markdown File: https://distyparts.com/product/2n6796-5.md
- TXT File: https://distyparts.com/product/2n6796-5.txt