Product Identity:
Part Number: 2N2861
Manufacturer: Texas Instruments
Canonical Name: 2N2861 Bipolar Transistor
Product Type: Bipolar Transistor
Category: Uncategorized
Subcategory: Single, Pre-Biased
Package: TO-18
Mounting Type: Through Hole

Summary:
The 2N2861 is a silicon bipolar transistor from Texas Instruments, suitable for high-frequency applications. It features a TO-18 package and through-hole mounting.

Description:
The 2N2861 is a silicon bipolar junction transistor (BJT) manufactured by Texas Instruments. It is designed for high-frequency applications, with a transition frequency (fT) of 30 MHz.

Key electrical characteristics include a maximum continuous collector current (IC MAX) of 100 mA and a maximum continuous collector power dissipation (PC MAX) of 300 mW. The collector-emitter breakdown voltage (VCEO) is rated at a minimum of 20V and typically 25V. The static current gain (hFE) is a minimum of 60 under specific test conditions (IC = 1 mA, VCE = 20 V).

This transistor is housed in a TO-18 package and is designed for through-hole mounting. Its specifications make it suitable for various general-purpose amplification and switching applications in electronic circuits where high-frequency performance is required.

Availability and Pricing:
- Stock Status: In Stock
- Distributor Count: 1
- Total Stock: 1
- Price: $0.77
- Pricing Available: Yes

Estimated Pricing:
- 1+: $0.77

Estimated pricing is for guidance only and is not a live distributor offer.

Distributor Offers:
- Distributor: Partservice
  Stock: 1

Features:
- High-frequency silicon bipolar transistor.
- 30 MHz transition frequency.
- 100 mA maximum collector current.
- 300 mW maximum power dissipation.
- TO-18 package for through-hole mounting.

Applications:
- Suitable for high-frequency switching circuits.
- Used in RF amplification applications.
- Ideal for high-speed switching in communication devices.
- Applicable in low-power amplifier designs.

Compliance:
- RoHS Status: RoHS3 Compliant
- REACH Status: REACH Unaffected
- Moisture Sensitivity Level: 1 Unlimited

Documents and Media:
- Product Page: https://distyparts.com/product/2n2861
- RFQ URL: https://distyparts.com/product/2n2861#rfq

FAQs:
Q: What is the maximum collector current for the 2N2861 transistor?
A: The maximum continuous collector current for the 2N2861 is 100 mA.

Q: What is the maximum power dissipation of the 2N2861 transistor?
A: The maximum continuous collector power dissipation for the 2N2861 is 300 mW.

Q: What is the transition frequency of the 2N2861 transistor?
A: The transition frequency (fT) of the 2N2861 is 30 MHz.

Q: What is the minimum collector-emitter breakdown voltage for the 2N2861?
A: The minimum collector-emitter breakdown voltage (VCEO) for the 2N2861 is 20V.

Q: What is the typical collector-emitter breakdown voltage for the 2N2861?
A: The typical collector-emitter breakdown voltage (VCEO) for the 2N2861 is 25V.

Q: What is the minimum current gain (hFE) of the 2N2861 transistor?
A: The minimum static current gain (hFE) for the 2N2861 is 60.

Q: What package type is the 2N2861 transistor in?
A: The 2N2861 transistor is in a TO-18 package.

Related Pages:
- Manufacturer: https://distyparts.com/manufacturer/texas-instruments
- Category: https://distyparts.com/category/uncategorized/new-products
- Product Page: https://distyparts.com/product/2n2861
- Markdown File: https://distyparts.com/product/2n2861.md
- TXT File: https://distyparts.com/product/2n2861.txt